Method of forming a contact structure and a container capacitor structure

Claim 1

A method for forming a container capacitor structure and a contact structure comprising: providing a substrate assembly comprising a container capacitor bottom electrode and a first dielectric next to the electrode; layering a second dielectric over at least the container capacitor bottom electrode; forming a hole in the first dielectric layer, wherein the hole is distal from the electrode; and simultaneously forming a conductive layer in at least a part of the container capacitor bottom electrode and in at least a part of the hole.

Claim 2

A method for forming a container capacitor structure and a contact structure comprising: providing a substrate assembly comprising a container capacitor bottom electrode and a first dielectric next to the electrode; layering a second dielectric over at least the container capacitor bottom electrode; forming a hole in the first dielectric layer, wherein the hole is distal from the electrode; and simultaneously forming a conductive layer in at least a part of the container capacitor bottom electrode and in at least a part of the hole.

Claim 6

A method for forming container capacitor structures and a contact structure comprising: providing a substrate assembly, the substrate assembly comprising a plurality of container capacitor bottom electrodes within a first dielectric layer; forming recesses in the first dielectric layer between adjacent container capacitor bottom electrodes of the plurality; forming a second dielectric layer over the first dielectric layer and interior to each of the plurality of container capacitor bottom electrodes; and forming a contact hole in the second dielectric layer and in the first dielectric layer; and simultaneously forming a conductive layer interior to the contact hole, interior to the recesses, and interior to each container capacitor bottom electrode of the plurality.

Claim 7

A method for forming container capacitor structures and a contact structure comprising: providing a substrate assembly, the substrate assembly comprising a plurality of container capacitor bottom electrodes within a first dielectric layer; forming recesses in the first dielectric layer between adjacent container capacitor bottom electrodes of the plurality; forming a second dielectric layer over the first dielectric layer and interior to each of the plurality of container capacitor bottom electrodes; and forming a contact hole in the second dielectric layer and in the first dielectric layer; and simultaneously forming a conductive layer interior to the contact hole, interior to the recesses, and interior to each container capacitor bottom electrode of the plurality.

Claim 11

A method for forming container capacitor structures and a contact structure comprising: providing a substrate assembly, the substrate assembly comprising a plurality of cup-like shaped capacitor bottom electrodes formed at least partially in a first dielectric layer; designating a contact structure location within the first dielectric layer and equidistant from each of the plurality of bottom electrodes; depositing a second dielectric layer over the plurality of bottom electrodes and over the first dielectric layer; depositing a masking layer over the second dielectric layer; patterning the masking layer to expose underlying portions of the second dielectric layer over the contact structure location; etching a hole in the first dielectric layer and the second dielectric layer responsive to the masking layer; removing the masking layer; and depositing a conductive layer in at least part of the hole and at least part of the plurality of bottom electrodes in one deposition operation.

Claim 12

A method for forming container capacitor structures and a contact structure comprising: providing a substrate assembly, the substrate assembly comprising a plurality of cup-like shaped capacitor bottom electrodes formed at least partially in a first dielectric layer; designating a contact structure location within the first dielectric layer and equidistant from each of the plurality of bottom electrodes; depositing a second dielectric layer over the plurality of bottom electrodes and over the first dielectric layer; depositing a masking layer over the second dielectric layer; patterning the masking layer to expose underlying portions of the second dielectric layer over the contact structure location; etching a hole in the first dielectric layer and the second dielectric layer responsive to the masking layer; removing the masking layer; and depositing a conductive layer in at least part of the hole and at least part of the plurality of bottom electrodes in one deposition operation.

Claim 13

A method of constructing a semiconductor circuit, comprising: providing a substrate assembly; partially forming a capacitor in the substrate assembly, wherein the capacitor defines an inner recess; forming a contact hole in the substrate assembly; and depositing conductive material in the inner recess and the contact hole in a common deposition step.

Claim 14

A method of constructing a semiconductor circuit, comprising: providing a substrate assembly; partially forming a capacitor in the substrate assembly, wherein the capacitor defines an inner recess; forming a contact hole in the substrate assembly; and depositing conductive material in the inner recess and the contact hole in a common deposition step.

Claim 17

A method of constructing a semiconductor circuit, comprising: providing a substrate assembly; partially forming a capacitor in the substrate assembly, wherein the capacitor defines an inner recess; forming a contact hole in the substrate assembly; depositing conductive material in the inner recess and the contact hole in a common deposition step: wherein partially forming a capacitor comprises: forming an outer recess immediately external to the capacitor; and wherein depositing conductive material comprises depositing conductive material in the inner recess, the outer recess, and the contact hole in a common deposition; and forming a cup-shaped bottom electrode at least partially embedded within a first dielectric and lined with a second dielectric; wherein forming an outer recess comprises: etching an opening in the first dielectric, between two adjacent cup-shaped bottom electrodes; and lining the opening with the second dielectric.

Claim 18

A method of constructing a semiconductor circuit, comprising: providing a substrate assembly; partially forming a capacitor in the substrate assembly, wherein the capacitor defines an inner recess; forming a contact hole in the substrate assembly; depositing conductive material in the inner recess and the contact hole in a common deposition step: wherein partially forming a capacitor comprises: forming an outer recess immediately external to the capacitor; and wherein depositing conductive material comprises depositing conductive material in the inner recess, the outer recess, and the contact hole in a common deposition; and forming a cup-shaped bottom electrode at least partially embedded within a first dielectric and lined with a second dielectric; wherein forming an outer recess comprises: etching an opening in the first dielectric, between two adjacent cup-shaped bottom electrodes; and lining the opening with the second dielectric.

Claim 19

A method of forming a plurality of memory cell components comprises: providing a layer of insulation over a substrate; providing a bottom plate of a container capacitor within the insulation, wherein the bottom plate defines a capacitor interior; lining at least the capacitor interior with a dielectric; forming a contact hole in the insulation; and simultaneously filling the contact hole and the capacitor interior with a conductive material.

Claim 20

A method of forming a plurality of memory cell components comprises: providing a layer of insulation over a substrate; providing a bottom plate of a container capacitor within the insulation, wherein the bottom plate defines a capacitor interior; lining at least the capacitor interior with a dielectric; forming a contact hole in the insulation; and simultaneously filling the contact hole and the capacitor interior with a conductive material.

Claim 21

A method of forming a contact and capacitor plate comprising: defining a discrete portion from an insulation material, wherein the discrete portion has a perimeter; providing a bottom plate of a container capacitor defining an interior and an exterior; abutting a first portion of the exterior against the perimeter; lining the interior and a second portion of the exterior with a dielectric material, wherein the second portion of the exterior is askew from the perimeter; defining a contact hole in a center of the discrete portion; and simultaneously depositing conductive material onto the dielectric material and into the contact hole.

Claim 22

A method of forming a contact and capacitor plate comprising: defining a discrete portion from an insulation material, wherein the discrete portion has a perimeter; providing a bottom plate of a container capacitor defining an interior and an exterior; abutting a first portion of the exterior against the perimeter; lining the interior and a second portion of the exterior with a dielectric material, wherein the second portion of the exterior is askew from the perimeter; defining a contact hole in a center of the discrete portion; and simultaneously depositing conductive material onto the dielectric material and into the contact hole.

Claim 23

A method of forming a contact and capacitor plate comprising: fabricating laterally spaced first and second container shaped bottom electrodes, such that a contact region is formed between the laterally spaced first and second container shaped bottom electrodes; providing the contact region with a first dielectric material to at least a vertical height of a top of the first and second container shaped bottom electrodes; forming a capacitor dielectric layer over the laterally spaced first and second container shaped bottom electrodes, wherein the capacitor dielectric layer has a thickness sufficient to allow capacitive coupling between the laterally spaced first and second container shaped bottom electrodes and a top electrode; forming a contact hole vertically through the first dielectric material and substantially centered between the first and second container shaped bottom electrodes; and forming the top electrode over the capacitor dielectric and an electrical contact in the contact hole in a single deposition operation.

Claim 24

A method of forming a contact and capacitor plate comprising: fabricating laterally spaced first and second container shaped bottom electrodes, such that a contact region is formed between the laterally spaced first and second container shaped bottom electrodes; providing the contact region with a first dielectric material to at least a vertical height of a top of the first and second container shaped bottom electrodes; forming a capacitor dielectric layer over the laterally spaced first and second container shaped bottom electrodes, wherein the capacitor dielectric layer has a thickness sufficient to allow capacitive coupling between the laterally spaced first and second container shaped bottom electrodes and a top electrode; forming a contact hole vertically through the first dielectric material and substantially centered between the first and second container shaped bottom electrodes; and forming the top electrode over the capacitor dielectric and an electrical contact in the contact hole in a single deposition operation.

Claim 26

A method of forming a contact and capacitor plate comprising: fabricating laterally spaced first and second container shaped bottom electrodes, such that a contact region is formed between the laterally spaced first and second container shaped bottom electrodes; forming a conductive stud horizontally between the first and second container shaped bottom electrodes and below the contact region; providing the contact region with a first dielectric material to at least a vertical height of a top of the first and second container shaped bottom electrodes; forming a capacitor dielectric layer over the laterally spaced first and second container shaped bottom electrodes, wherein the capacitor dielectric layer has a thickness sufficient to allow capacitor coupling between the laterally spaced first and second container shaped bottom electrodes and a top electrode, wherein the capacitor dielectric layer covers an interior surface of each of the first and second container shaped bottom electrodes, and the capacitor dielectric layer further covers an exterior surface of each of the first and second container shaped bottom electrodes not in contact with the first dielectric material; forming a contact hole vertically through the first dielectric material to a top of the conductive stud; and forming the top electrode over the capacitor dielectric and an electrical contact in the contact hole in a single deposition operation.

Claim 27

A method of forming a contact and capacitor plate comprising: fabricating laterally spaced first and second container shaped bottom electrodes, such that a contact region is formed between the laterally spaced first and second container shaped bottom electrodes; forming a conductive stud horizontally between the first and second container shaped bottom electrodes and below the contact region; providing the contact region with a first dielectric material to at least a vertical height of a top of the first and second container shaped bottom electrodes; forming a capacitor dielectric layer over the laterally spaced first and second container shaped bottom electrodes, wherein the capacitor dielectric layer has a thickness sufficient to allow capacitor coupling between the laterally spaced first and second container shaped bottom electrodes and a top electrode, wherein the capacitor dielectric layer covers an interior surface of each of the first and second container shaped bottom electrodes, and the capacitor dielectric layer further covers an exterior surface of each of the first and second container shaped bottom electrodes not in contact with the first dielectric material; forming a contact hole vertically through the first dielectric material to a top of the conductive stud; and forming the top electrode over the capacitor dielectric and an electrical contact in the contact hole in a single deposition operation.

Claim 28

A method for forming a container capacitor structure and a contact structure comprising: providing a substrate assembly comprising a container capacitor bottom electrode and a first dielectric next to the electrode; layering a capacitor dielectric over at least the container capacitor bottom electrode, wherein the capacitor dielectric has a thickness sufficient to allow capacitive coupling between the container capacitor bottom electrode and a top electrode; forming a hole in the first dielectric layer, wherein the hole is distal from the electrode by a lateral distance substantially greater than the thickness of the capacitor dielectric layer; and simultaneously forming the top electrode over the capacitor dielectric layer and a contact in the hole.

Claim 29

A method for forming a container capacitor structure and a contact structure comprising: providing a substrate assembly comprising a container capacitor bottom electrode and a first dielectric next to the electrode; layering a capacitor dielectric over at least the container capacitor bottom electrode, wherein the capacitor dielectric has a thickness sufficient to allow capacitive coupling between the container capacitor bottom electrode and a top electrode; forming a hole in the first dielectric layer, wherein the hole is distal from the electrode by a lateral distance substantially greater than the thickness of the capacitor dielectric layer; and simultaneously forming the top electrode over the capacitor dielectric layer and a contact in the hole.