US6683005B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming capacitor constructions
Assignee: Micron Technology Inc
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Filing: 2003-01-17
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Granted: 2004-01-27
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Expires: 2023-01-17
Abstract
Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung Tri Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
99 words
A method of forming a capacitor construction comprising: forming a conductive material over a semiconductive material substrate; forming a dielectric material over the conductive material, the dielectric material comprising a first layer and a second layer; providing a precursor at a location proximate an uppermost surface of the dielectric material; providing a laser beam focused at the location, a focal point of the laser beam being from about 2 mm to about 4 mm above the uppermost surface, the laser beam generating an activated oxygen species from the precursor; and contacting the activated oxygen species with the dielectric material.
Claim 2
Independent Claim
99 words
A method of forming a capacitor construction comprising: forming a conductive material over a semiconductive material substrate; forming a dielectric material over the conductive material, the dielectric material comprising a first layer and a second layer; providing a precursor at a location proximate an uppermost surface of the dielectric material; providing a laser beam focused at the location, a focal point of the laser beam being from about 2 mm to about 4 mm above the uppermost surface, the laser beam generating an activated oxygen species from the precursor; and contacting the activated oxygen species with the dielectric material.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein the contacting the activated oxygen species with the dielectric material increases the oxygen content of at least one of the first layer and the second layer.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the first layer comprises one or more of silicon dioxide, silicon nitride and silicon oxynitride.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein the second layer comprises a metal and oxygen.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material comprises tantalum pentoxide.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material comprises aluminum oxide.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material comprises hafnium oxide.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material comprises titanium oxide.
Claim 10
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material comprises strontium titanate.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein the dielectric material comprises barium strontium titanate.
Claim 12
Independent Claim
101 words
A method of forming a capacitor construction, comprising: forming a first capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode, the dielectric material having a surface; flowing a fluid comprising oxygen and ozone into a reactor containing the substrate; providing a laser beam having a focal point above the surface, the laser beam comprising a wavelength of from 193 nm to 248 nm to generate an activated oxygen species from the ozone; contacting the activated oxygen species with the dielectric material; and after the contacting, forming a second capacitor electrode over the dielectric material.
Claim 13
Independent Claim
101 words
A method of forming a capacitor construction, comprising: forming a first capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode, the dielectric material having a surface; flowing a fluid comprising oxygen and ozone into a reactor containing the substrate; providing a laser beam having a focal point above the surface, the laser beam comprising a wavelength of from 193 nm to 248 nm to generate an activated oxygen species from the ozone; contacting the activated oxygen species with the dielectric material; and after the contacting, forming a second capacitor electrode over the dielectric material.
Claim 14
Dependent Claim
18 words
The method of claim 11 wherein the fluid comprises form about 1% to about 10% ozone, by volume.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein the focal point is from about 2 mm to about 4 mm above the surface.
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