US6744116B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film using non-thermal techniques
Assignee: Intel Corp
•
Filing: 1999-10-08
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Granted: 2004-06-01
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Expires: 2019-10-08
Abstract
Abstract A method for forming an integrated circuit is provided. A semiconductor film is formed onto a first substrate. A metal film is formed onto a second substrate. The second substrate is bonded with the metal film onto the thin film of the first substrate. A first layer of transistors is formed onto the film. The second substrate is removed at a temperature within a low temperature range. The semiconductor film is bonded with the first layer of transistors onto a second layer of transistors of a third substrate.
Inventors
- 👤 Brian S. Doyle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 01:23
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10D; H10D86/00; H10D86/01; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
An apparatus comprising: a first substrate portion having a plurality of active devices formed thereon and defining a first device surface; and a second single crystal substrate portion having active devices formed thereon and defining a second device surface, wherein the first device surface of the first substrate portion is bonded directly to the second device surface of the second substrate portion by a thermal anneal at a temperature suitable to device structures on the first and second device structures, and wherein selected ones of said active devices of said second substrate portion are intercoupled via metal lines.
Claim 2
Independent Claim
98 words
An apparatus comprising: a first substrate portion having a plurality of active devices formed thereon and defining a first device surface; and a second single crystal substrate portion having active devices formed thereon and defining a second device surface, wherein the first device surface of the first substrate portion is bonded directly to the second device surface of the second substrate portion by a thermal anneal at a temperature suitable to device structures on the first and second device structures, and wherein selected ones of said active devices of said second substrate portion are intercoupled via metal lines.
Claim 3
Dependent Claim
30 words
The apparatus of claim 1 , wherein selected ones of the devices of the first substrate portion and selected ones of the devices of the second substrate portion are interconnected.
Claim 4
Independent Claim
134 words
An apparatus comprising: a primary substrate having a first level of devices formed thereon and defining a first device surface; and at least one secondary single crystal substrate having active devices formed thereon and defining a second device surface, wherein the first device surface of the primary substrate is connected directly to the second device surface of the at least one secondary single crystal substrate such that selected ones of said active devices of said at least one secondary single crystal substrate are intercoupled via metal lines to selected ones of the first level of devices of the primary substrate, and wherein the bond joint between the primary substrate and the secondary substrate is formed by a thermal anneal at a temperature suitable to device structures on the primary substrate and the secondary substrate.
Claim 5
Independent Claim
134 words
An apparatus comprising: a primary substrate having a first level of devices formed thereon and defining a first device surface; and at least one secondary single crystal substrate having active devices formed thereon and defining a second device surface, wherein the first device surface of the primary substrate is connected directly to the second device surface of the at least one secondary single crystal substrate such that selected ones of said active devices of said at least one secondary single crystal substrate are intercoupled via metal lines to selected ones of the first level of devices of the primary substrate, and wherein the bond joint between the primary substrate and the secondary substrate is formed by a thermal anneal at a temperature suitable to device structures on the primary substrate and the secondary substrate.
Claim 6
Dependent Claim
18 words
The apparatus of claim 1 , wherein said first substrate portion is made of a single crystal silicon.
Claim 7
Dependent Claim
17 words
The apparatus of claim 3 , wherein said primary substrate is made of a single crystal silicon.
Claim 8
Dependent Claim
49 words
The apparatus of claim 1 , wherein the first substrate portion is formed as a film of less than an entire portion of a starting material by demarcating a film thickness through an ion implantation into the starting material and separating the first substrate portion from the starting material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2007-06-01 | 2007-12-01 | 2008-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-01 | 2011-12-01 | 2012-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-01 | 2015-12-01 | 2016-06-01 | $7700.00 | Window Closed / Lapsed |