US5355022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stacked-type semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1992-08-28
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Granted: 1994-10-11
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Expires: 2012-08-28
Abstract
Abstract In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700 DEG C. or below and changing the refractory metal layer to silicide.
Inventors
- 👤 Kazuyuki Sugahara
- 👤 Natsuo Ajika
- 👤 Toshiaki Ogawa
- 👤 Toshiaki Iwamatsu
- 👤 Takashi Ipposhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:05
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10D88/00; H10D88/01; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
168 words
A stacked-type semiconductor device comprising: a supporting substrate having a main surface; a refractory metal silicide layer on said main surface of said supporting substrate, said refractory metal silicide layer having an upper surface and a lower surface facing said main surface; a silicon layer on said upper surface of said refractory metal silicide layer, said silicon layer having an upper surface and a lower surface facing said upper surface of said refractory metal silicide layer; a first semiconductor layer on said upper surface of said silicon layer, said first semiconductor layer having an upper surface and a lower surface facing said upper surface of said silicon layer; and a second semiconductor layer on said upper surface of asid first semiconductor layer with an insulating layer interposed therebetween, wherein said second semiconductor layer has an upper surface and a lower surface, and said lower surface of said first semiconductor layer and said upper surface of said second semiconductor layer each has at least one electronic device formed thereon.
Claim 2
Dependent Claim
168 words
A stacked-type semiconductor device comprising: a supporting substrate having a main surface; a refractory metal silicide layer on said main surface of said supporting substrate, said refractory metal silicide layer having an upper surface and a lower surface facing said main surface; a silicon layer on said upper surface of said refractory metal silicide layer, said silicon layer having an upper surface and a lower surface facing said upper surface of said refractory metal silicide layer; a first semiconductor layer on said upper surface of said silicon layer, said first semiconductor layer having an upper surface and a lower surface facing said upper surface of said silicon layer; and a second semiconductor layer on said upper surface of asid first semiconductor layer with an insulating layer interposed therebetween, wherein said second semiconductor layer has an upper surface and a lower surface, and said lower surface of said first semiconductor layer and said upper surface of said second semiconductor layer each has at least one electronic device formed thereon.
Claim 3
Dependent Claim
16 words
A stacked-type semiconductor device according to claim 1, wherein said supporting substrate comprises a silicon substrate.
Claim 4
Dependent Claim
17 words
A stacked-type semiconductor device according to claim 1 1, wherein said supporting substrate comprises a quartz substrate.
Claim 5
Dependent Claim
23 words
A stacked-type semiconductor device according to claim 1, further comprising an insulating film interposed between said silicon layer and said first semiconductor layer.
Claim 6
Dependent Claim
23 words
A stacked-type semiconductor device according to claim 1, wherein at least one of said first and second semiconductor layers is a silicon layer.
Claim 7
Dependent Claim
162 words
A stacked-type semiconductor device comprising: a supporting having a main surface; a silicon nitride layer on said main surface of said supporting substrate, said silicon nitride layer having an upper surface and a lower surface facing said main surface; a silicon layer on said upper surface of said silicon nitride layer, said silicon layer having an upper surface and a lower surface facing said upper surface of said silicon nitride layer; a first semiconductor layer on said upper surface of said silicon layer, said first semiconductor layer having an upper surface and a lower surface facing said upper surface of said silicon layer; and a second semiconductor layer on said upper surface of said first semiconductor layer with an insulating layer interposed therebetween, said second semiconductor layer having an upper surface and a lower surface, wherein said lower surface of said first semiconductor layer and said upper surface of said second semiconductor layer each has at least one electronic device formed thereon.
Claim 8
Dependent Claim
162 words
A stacked-type semiconductor device comprising: a supporting having a main surface; a silicon nitride layer on said main surface of said supporting substrate, said silicon nitride layer having an upper surface and a lower surface facing said main surface; a silicon layer on said upper surface of said silicon nitride layer, said silicon layer having an upper surface and a lower surface facing said upper surface of said silicon nitride layer; a first semiconductor layer on said upper surface of said silicon layer, said first semiconductor layer having an upper surface and a lower surface facing said upper surface of said silicon layer; and a second semiconductor layer on said upper surface of said first semiconductor layer with an insulating layer interposed therebetween, said second semiconductor layer having an upper surface and a lower surface, wherein said lower surface of said first semiconductor layer and said upper surface of said second semiconductor layer each has at least one electronic device formed thereon.
Claim 9
Dependent Claim
16 words
A stacked-type semiconductor device according to claim 6, wherein said supporting substrate comprises a silicon substrate.
Claim 10
Dependent Claim
16 words
A stacked-type semiconductor device according to claim 6, wherein said supporting substrate comprises a quartz substrate.
Claim 11
Dependent Claim
23 words
A stacked-type semiconductor device according to claim 6, further comprising an insulating film interposed between said silicon layer and said first semiconductor layer.
Claim 12
Dependent Claim
23 words
A stacked-type semiconductor device according to claim 6, wherein at least one of said first and second semiconductor layers is a silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-10 | 1998-04-11 | 1998-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-10 | 2002-04-11 | 2002-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-10 | 2006-04-11 | 2006-10-11 | $7700.00 | Window Closed / Lapsed |