US5003375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
Assignee: Seiko Epson Corp
•
Filing: 1990-07-27
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Granted: 1991-03-26
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Expires: 2010-07-27
Abstract
Abstract An MIS type semiconductor integrated circuit device, composed of: a semiconductor substrate of a first conductivity type provided with spaced source and drain regions of a second conductivity type; a gate insulated film formed on the semiconductor substrate; a film of polycrystalline silicon formed on the gate insulation film; a gate electrode composed of a film of a refractory metal formed on the polycrystalline silicon film; and a film of a refractory metal silicide formed on the exposed surfaces of the gate electrode; wherein the source and drain regions are formed in the semiconductor substrate on both sides of the gate electrode on which the refractory metal silicide film is formed.
Inventors
- 👤 Matsuo Ichikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:53
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10D30/00; H10D30/60; H10D64/661; H10D64/662; H10D64/663; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
125 words
An MIS type semiconductor integrated circuit device, comprising: a semiconductor substrate of a first conductivity type provided with spaced source and drain regions of a second conductivity type; a gate insulation film formed on said semiconductor substrate; a film of polycrystalline silicon formed on said gate insulation film; a gate electrode composed of a film of a refractory metal formed on said polycrystalline silicon film, said gate electrode having an exposed upper surface and exposed side surfaces; and a film of a refractory metal silicide formed on the exposed upper and side surfaces of said gate electrode; wherein said source and drain regions are formed in said semiconductor substrate on both sides of said gate electrode on which said refractory metal silicide film is formed.
Claim 2
Dependent Claim
125 words
An MIS type semiconductor integrated circuit device, comprising: a semiconductor substrate of a first conductivity type provided with spaced source and drain regions of a second conductivity type; a gate insulation film formed on said semiconductor substrate; a film of polycrystalline silicon formed on said gate insulation film; a gate electrode composed of a film of a refractory metal formed on said polycrystalline silicon film, said gate electrode having an exposed upper surface and exposed side surfaces; and a film of a refractory metal silicide formed on the exposed upper and side surfaces of said gate electrode; wherein said source and drain regions are formed in said semiconductor substrate on both sides of said gate electrode on which said refractory metal silicide film is formed.
Claim 3
Dependent Claim
43 words
A device as claimed in claim 1 wherein a boundary surface exists between said refractory metal film and said polycrystalline film, and further comprising a refractory metal silicide film on the boundary surface between said refractory metal film and said polycrystalline silicon film.
Claim 4
Dependent Claim
41 words
A device as claimed in claim 2 wherein said refractory metal silicide film has a surface, and further comprising an oxidized film coating on the surface of said refractory metal silicide film formed on the exposed surfaces of said gate electrode.
Claim 5
Dependent Claim
25 words
A device as claimed in claim 3 wherein said oxidized film coating is composed of a thermally produced oxide of said refractory metal silicide film.
Claim 6
Dependent Claim
24 words
A device as claimed in claim 4 wherein said refractory metal silicide film is composed of a thermally produced silicide of said refractory metal.
Claim 7
Dependent Claim
21 words
A device as claimed in claim 5 wherein the thickness of said polycrystalline silicon film is about 500 to 2500 Å.
Claim 8
Dependent Claim
22 words
A device as claimed in claim 6 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 9
Dependent Claim
22 words
A device as claimed in claim 5 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 10
Dependent Claim
22 words
A device as claimed in claim 4 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 11
Dependent Claim
22 words
A device as claimed in claim 3 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 12
Dependent Claim
22 words
A device as claimed in claim 2 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 13
Dependent Claim
24 words
A device as claimed in claim 2 wherein said refractory metal silicide film is composed of a thermally produced silicide of said refractory metal.
Claim 14
Dependent Claim
21 words
A device as claimed in claim 12 wherein the thickness of said polycrystalline silicon film is about 500 to 2500 Å.
Claim 15
Dependent Claim
24 words
A device as claimed in claim 1 wherein said refractory metal silicide film is composed of a thermally produced silicide of said refractory metal.
Claim 16
Dependent Claim
21 words
A device as claimed in claim 1 wherein the thickness of said polycrystalline silicon film is about 500 to 2500 Å.
Claim 17
Dependent Claim
41 words
A device as claimed in claim 1 wherein said refractory metal silicide film has a surface, and further comprising an oxidized film coating on the surface of said refractory metal silicide film formed on the exposed surfaces of said gate electrode.
Claim 18
Dependent Claim
25 words
A device as claimed in claim 16 wherein said oxidized film coating is composed of a thermally produced oxide of said refractory metal silicide film.
Claim 19
Dependent Claim
24 words
A device as claimed in claim 17 wherein said refractory metal silicide film is composed of a thermally produced silicide of said refractory metal.
Claim 20
Dependent Claim
21 words
A device as claimed in claim 18 wherein the thickness of said polycrystalline silicon film is about 500 to 2500 Å.
Claim 21
Dependent Claim
22 words
A device as claimed in claim 19 wherein said refractory metal is a metal selected from Ti, W, Mo, Ta and Pt.
Claim 22
Dependent Claim
25 words
A device as claimed in claim 6 wherein said refractory metal is an alloy of a metal selected from Ti, W, Mo, Ta and Pt.
Claim 23
Dependent Claim
13 words
A device as claimed in claim 21 wherein said refractory metal is TiW.
Claim 24
Dependent Claim
13 words
A device as claimed in claim 21 wherein said refractory metal is TiMo.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-25 | 1994-09-24 | 1995-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-25 | 1998-09-24 | 1999-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-25 | 2002-09-24 | 2003-03-26 | $7700.00 | Window Closed / Lapsed |