Mos transistor

Abstract

Abstract PURPOSE:To operate a transistor at high speed by forming a gate electrode of a multilayer structure of a polysilicon and metal or metal silicide, thereby reducing the resistance of the gate electrode. CONSTITUTION:A source region 4, a drain region 1, a gate oxide film 3, and a gate electrode 2 are formed on a p-type substrate 5 to obtain an N-channel MOSFET. The electrode 2 is formed by laminating a polysilicon layer 6, a high melting point metal or its silicide layer 9, a polysilicon layer 10, and a high melting point metal or its silicide layer 11. Thus, the resistance of the gate electrode 2 can be reduced to operate a transistor at high speed.

Inventors

• 👤 Koichi Nagasawa
• 👤 長沢　紘一

Bibliographic Details