JPS51150281A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Oki Electric Industry Co Ltd
•
Filing: 1975-06-19
•
Granted: —
•
Expires: 1995-06-19
Abstract
Abstract PURPOSE: To realize compactness and high-speed manufacturing of a MOSFET by constituting a gate electrodes tructure as a complex structure of polycrystal silicon and high fusion point metal, by improving on the stability and the reproductivity against a high temperature heat treatment, and by reducing the resistivity of the electrodes. COPYRIGHT: (C)1976,JPO&Japio
Inventors
- 👤 Hiroshi Matsui
- 👤 Masayoshi Ino
- 👤 Hiroo Mizogami
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 14:45
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
JPS4840818A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.