US4924281A
Expired / Lapsed
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Gate structure for a MOS FET
Assignee: Toshiba Corp
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Filing: 1987-03-16
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Granted: 1990-05-08
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Expires: 2007-03-16
Abstract
Abstract A gate structure of a MOS FET has an oxide layer and an electrode layer sequentially formed on a silicon substrate. In the gate structure, the electrode layer includes a first silicidized high-melting metal layer formed on the oxide layer, a high-melting metal layer formed on the first silicidized high-melting metal layer and a second silicidized high-melting metal layer formed on the high-melting metal layer.
Inventors
- 👤 Kazuo Endo
- 👤 Noboru Noda
- 👤 Tatsuro Mitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:09
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/669; H10D64/671; H10D64/668
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
112 words
A gate structure for an insulated gate type FET, comprising: a substrate; a silicon oxide layer formed on said substrate; and a gate electrode formed on said silicon oxide layer, said gate electrode including a high-melting metal layer and first and second silicidized, high-melting metal layers each thinner than said high-melting metal layer, said first silicidized, high-melting metal layer being formed on said silicon oxide layer, with said high-melting metal layer being formed between respective upper and bottom surfaces of said first and second silicidized, high-melting metal layers, and side surfaces of said high-melting metal layer being in alignment with corresponding side surfaces of said first and second silicidized, high-melting metal layers.
Claim 2
Dependent Claim
112 words
A gate structure for an insulated gate type FET, comprising: a substrate; a silicon oxide layer formed on said substrate; and a gate electrode formed on said silicon oxide layer, said gate electrode including a high-melting metal layer and first and second silicidized, high-melting metal layers each thinner than said high-melting metal layer, said first silicidized, high-melting metal layer being formed on said silicon oxide layer, with said high-melting metal layer being formed between respective upper and bottom surfaces of said first and second silicidized, high-melting metal layers, and side surfaces of said high-melting metal layer being in alignment with corresponding side surfaces of said first and second silicidized, high-melting metal layers.
Claim 3
Dependent Claim
22 words
A gate structure according to claim 1, wherein said first and second silicidized, high-melting metal layers are formed of a molybdenum silicide.
Claim 4
Dependent Claim
22 words
A gate structure according to claim 1, wherein said first and second silicidized, high-melting metal layers are formed of a titanium silicide.
Claim 5
Dependent Claim
28 words
A gate structure according to claim -, wherein said first and second silicidized, high-melting metal layers respectively contact entire bottom and upper surfaces of said high-melting metal layer.
Claim 6
Dependent Claim
23 words
A gate electrode according to claim 4, wherein a third silicidized, high-melting metal layer covers entire side surfaces of said high-melting metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-07 | 1993-11-06 | 1994-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-07 | 1997-11-06 | 1998-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-07 | 2001-11-06 | 2002-05-08 | $7700.00 | Window Closed / Lapsed |