US4581627A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhanced silicide adhesion to semiconductor and insulator surfaces
Assignee: Toshiba Corp
•
Filing: 1983-01-19
•
Granted: 1986-04-08
•
Expires: 2003-01-19
Abstract
Abstract The invention provides a semiconductor device in which an insulating film or a semiconductor film is firmly bonded with a metal silicide film, and also provides a method for manufacturing the same. The semiconductor device has a semiconductor substrate with an insulating film or a semiconductor film formed thereon, a carbon layer formed on the insulating film or the semiconductor film, and a metal silicide film formed on the carbon layer. Carbon atoms are thermally diffused by heating from the carbon layer into the insulating film or the semiconductor film and into the metal silicide film.
Inventors
- 👤 Yoshiya Ueda
- 👤 Fumie Okutsu
- 👤 Masaki Momotomi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:52
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01304; H10D64/01318; H10D64/0132; H10D64/01338; H10D64/60; H10D64/66; H10D64/667; H10D64/668; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414; H10D64/01346; H10D64/68; Y; Y10; Y10S; Y10S148/00; Y10S148/083; Y10S148/14
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
70 words
A semiconductor device comprising a semiconductor substrate with an insulating film formed thereon, a carbon layer formed on said insulating film, and a metal silicide film formed on said carbon layer, wherein carbon atoms are thermally diffused by heating from said carbon layer into said insulating film and into said metal silicide film and said diffused carbon atoms improve adhesion strength between said insulating film and said metal silicide film.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising a semiconductor substrate with an insulating film formed thereon, a carbon layer formed on said insulating film, and a metal silicide film formed on said carbon layer, wherein carbon atoms are thermally diffused by heating from said carbon layer into said insulating film and into said metal silicide film and said diffused carbon atoms improve adhesion strength between said insulating film and said metal silicide film.
Claim 3
Dependent Claim
18 words
A device according to claim 1, wherein said carbon layer has a thickness of 20 to 50 Å.
Claim 4
Dependent Claim
29 words
A device according to claim 1, wherein said metal silicide film is made of a material selected from the group consisting of molybdenum silicide, tungsten silicide and platinum silicide.
Claim 5
Dependent Claim
15 words
A device according to claim 1, wherein said metal silicide film constitutes a gate electrode.
References Cited (Backward Citations)
US4395813A
Cited
US4404235A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-07 | 1989-10-07 | 1990-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-07 | 1993-10-07 | 1994-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-07 | 1997-10-07 | 1998-04-08 | $7700.00 | Window Closed / Lapsed |