US6312797B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing bonded wafer and bonded wafer
Assignee: Shin-Etsu Handotai Co Ltd
•
Filing: 1999-07-09
•
Granted: 2001-11-06
•
Expires: 2019-07-09
Abstract
Abstract The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-10 14 atoms/cm 2 or less.
Inventors
- 👤 Isao Yokokawa
- 👤 Kiyoshi Mitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:46
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P70/00; H10P70/10; H10P70/15; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/974; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
32 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at close contacted surfaces of both wafers of 5×10 14 atoms/cm 2 or less.
Claim 2
Independent Claim
32 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at close contacted surfaces of both wafers of 5×10 14 atoms/cm 2 or less.
Claim 3
Independent Claim
33 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at a joint surface after separation heat treatment of 3×10 14 atoms/cm 2 or less.
Claim 4
Independent Claim
33 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at a joint surface after separation heat treatment of 3×10 14 atoms/cm 2 or less.
Claim 5
Dependent Claim
29 words
The method for manufacturing a bonded wafer according to claim 1 , wherein thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
Claim 6
Dependent Claim
29 words
The method for manufacturing a bonded wafer according to claim 2 , wherein thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
Claim 7
Independent Claim
52 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, wherein surfaces of wafers to be bonded to each other are cleaned with ozone cleaning and/or sulfuric acid-hydrogen peroxide cleaning combined with at least one of SC-1 cleaning and SC-2 cleaning, thereafter the wafers are bonded to each other.
Claim 8
Independent Claim
52 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, wherein surfaces of wafers to be bonded to each other are cleaned with ozone cleaning and/or sulfuric acid-hydrogen peroxide cleaning combined with at least one of SC-1 cleaning and SC-2 cleaning, thereafter the wafers are bonded to each other.
Claim 9
Dependent Claim
36 words
A bonded wafer manufactured by a hydrogen ion delamination method, the bonded wafer comprising a joint surface, and carbon concentration at the joint surface after a separation heat treatment is 3×10 14 atoms/cm 2 or less.
Claim 10
Dependent Claim
36 words
A bonded wafer manufactured by a hydrogen ion delamination method, the bonded wafer comprising a joint surface, and carbon concentration at the joint surface after a separation heat treatment is 3×10 14 atoms/cm 2 or less.
Claim 11
Dependent Claim
26 words
The bonded wafer according to claim 6 , wherein a thickness of a silicon oxide film present at a joint surface is 0.1 μm or more.
Claim 12
Dependent Claim
35 words
A wafer applied in a hydrogen ion delamination method, the wafer comprising carbon concentration at a close contacted surface where two wafers are closely contacted to each other of 5×10 14 atoms/cm 2 or less.
Claim 13
Dependent Claim
35 words
A wafer applied in a hydrogen ion delamination method, the wafer comprising carbon concentration at a close contacted surface where two wafers are closely contacted to each other of 5×10 14 atoms/cm 2 or less.
Claim 14
Dependent Claim
32 words
The wafer applied in a hydrogen ion delamination method according to claim 8 , wherein a thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
References Cited (Backward Citations)
JPS6050970A
Cited
EP0476897A2
Cited
US5232870A
Cited
JPH0546086A
Cited
JPH05211128A
Cited
US5374564A
Cited
US5773355A
Cited
US5966620A
Cited
US6083324A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |