Patent US6312797B1 successfully refreshed from Google Patents.
US6312797B1
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US
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Method for manufacturing bonded wafer and bonded wafer
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1999-07-09
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Granted: 2001-11-06
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Expires: 2019-07-09
Abstract
Abstract The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-10 14 atoms/cm 2 or less.
Inventors
- 👤 Isao Yokokawa
- 👤 Kiyoshi Mitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:00
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P70/00; H10P70/10; H10P70/15; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/974; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
32 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at close contacted surfaces of both wafers of 5×10 14 atoms/cm 2 or less.
Claim 2
Independent Claim
32 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at close contacted surfaces of both wafers of 5×10 14 atoms/cm 2 or less.
Claim 3
Independent Claim
33 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at a joint surface after separation heat treatment of 3×10 14 atoms/cm 2 or less.
Claim 4
Independent Claim
33 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, comprising having a carbon concentration at a joint surface after separation heat treatment of 3×10 14 atoms/cm 2 or less.
Claim 5
Dependent Claim
29 words
The method for manufacturing a bonded wafer according to claim 1 , wherein thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
Claim 6
Dependent Claim
29 words
The method for manufacturing a bonded wafer according to claim 2 , wherein thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
Claim 7
Independent Claim
52 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, wherein surfaces of wafers to be bonded to each other are cleaned with ozone cleaning and/or sulfuric acid-hydrogen peroxide cleaning combined with at least one of SC-1 cleaning and SC-2 cleaning, thereafter the wafers are bonded to each other.
Claim 8
Independent Claim
52 words
A method for manufacturing a bonded wafer by a hydrogen ion delamination method, wherein surfaces of wafers to be bonded to each other are cleaned with ozone cleaning and/or sulfuric acid-hydrogen peroxide cleaning combined with at least one of SC-1 cleaning and SC-2 cleaning, thereafter the wafers are bonded to each other.
Claim 9
Dependent Claim
36 words
A bonded wafer manufactured by a hydrogen ion delamination method, the bonded wafer comprising a joint surface, and carbon concentration at the joint surface after a separation heat treatment is 3×10 14 atoms/cm 2 or less.
Claim 10
Dependent Claim
36 words
A bonded wafer manufactured by a hydrogen ion delamination method, the bonded wafer comprising a joint surface, and carbon concentration at the joint surface after a separation heat treatment is 3×10 14 atoms/cm 2 or less.
Claim 11
Dependent Claim
26 words
The bonded wafer according to claim 6 , wherein a thickness of a silicon oxide film present at a joint surface is 0.1 μm or more.
Claim 12
Dependent Claim
35 words
A wafer applied in a hydrogen ion delamination method, the wafer comprising carbon concentration at a close contacted surface where two wafers are closely contacted to each other of 5×10 14 atoms/cm 2 or less.
Claim 13
Dependent Claim
35 words
A wafer applied in a hydrogen ion delamination method, the wafer comprising carbon concentration at a close contacted surface where two wafers are closely contacted to each other of 5×10 14 atoms/cm 2 or less.
Claim 14
Dependent Claim
32 words
The wafer applied in a hydrogen ion delamination method according to claim 8 , wherein a thickness of a silicon oxide film present at close contacted surfaces is 0.1 μm or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |