EP0476897A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for production of bonded wafer
Assignee: Shin-Etsu Handotai Co Ltd
•
Filing: 1991-09-06
•
Granted: —
•
Expires: 2011-09-06
Abstract
Abstract A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.
Inventors
- 👤 Tatsuo Ito
- 👤 Yasuaki Nakazato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:35
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
57 words
(1) A method for the production of a bonded wafer which is characterized by the fact that in the process for production of said bonded wafer, the surfaces of two semiconductor wafers which are intended for mutual attachment are irradiated with an ultraviolet light in an atmosphere of oxygen immediately before said two semiconductor wafers are joined.
Claim 2
Dependent Claim
68 words
(2) A method for the production of a bonded wafer which is characterized by the fact that in the process for production of said bonded wafer, immediately before two semiconductor wafers at least one of which has an oxide film formed on one surface thereof are joined, the surfaces of said semiconductor wafers intended for mutual attachment are irradiated with an ultraviolet light in an atmosphere of oxygen.
Claim 3
Dependent Claim
136 words
(3) A method for the production of a bonded wafer which is characterized by the fact that in the process for production of said bonded wafer, one of the free surfaces of (a) a bonded wafer obtained by causing the surfaces of two semiconductor wafers intended for direct mutual attachment to be irradiated with an ultraviolet light in an atmosphere of oxygen and immediately thereafter joining said two semiconductor wafers or (b) a bonded wafer obtained by causing the surfaces of two semiconductor wafers at least one of which has an oxide film formed on one surface thereof to be irradiated with an ultravilet light in an atmosphere of oxygen and immediately thereafter joining said two semiconductor wafers is polished until said polished surface is removed to form a thin semicoductor film above the bonding surface.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.