US6150031A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor member and process for preparing semiconductor member
Assignee: Canon Inc
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Filing: 1996-12-13
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Granted: 2000-11-21
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Expires: 2016-12-13
Abstract
Abstract A semiconductor member in which a non-porous monocrystalline semiconductor region is arranged on a porous monocrystalline semiconductor region. An insulating material is bonded onto the surface of the non-porous monocrystalline layer.
Inventors
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:57
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
109 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region arranged on said insulator and having an area of 182 cm 2 to 500 cm 2 , wherein within the area a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 10% or less based on said maximum thickness.
Claim 2
Dependent Claim
109 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region arranged on said insulator and having an area of 182 cm 2 to 500 cm 2 , wherein within the area a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 10% or less based on said maximum thickness.
Claim 3
Dependent Claim
33 words
The semiconductor member according to claim 1, wherein said epitaxially grown non-porous silicon monocrystalline semiconductor region has a 6-inch diameter and wherein said difference is 10% or less based on said maximum thickness.
Claim 4
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 3-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 5% or less based on said maximum thickness.
Claim 5
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 3-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 5% or less based on said maximum thickness.
Claim 6
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 4-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
Claim 7
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 4-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
Claim 8
Dependent Claim
14 words
The semiconductor member according to claim 4, wherein said difference is 7% or less.
Claim 9
Dependent Claim
14 words
The semiconductor member according to claim 4, wherein said difference is 6% or less.
Claim 10
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 5-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
Claim 11
Dependent Claim
97 words
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 5-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0×10 4 /cm 2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0×10 -4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-11-21 | 2004-05-22 | 2004-11-21 | $2000.00 | Window Closed / Lapsed |
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