US4868140A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Canon Inc
•
Filing: 1988-06-27
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Granted: 1989-09-19
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Expires: 2008-06-27
Abstract
Abstract In a semiconductor device, an active layer is formed on an insulating substrate. The active layer is a polycrystalline semiconductor film having large diameter crystal grain. A carrier mobility of said polycrystalline semiconductor film is not lower than 10 cm 2 /V·sec.
Inventors
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P14/00; H10P14/40; H10P14/416; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; Y; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
133 words
A method of manufacturing a semiconductor device having a semiconductor film carrier mobility not lower than 10 cm 2 /V·sec, comprising the steps of: (1) heating a non-crystalline insulating substrate to maintain the substrate at a temperature above a crystallization temperature of the semiconductor film to be formed; (2) depositing a polycrystalline semiconductor film of sufficient thickness on the substrate while it is maintained at the temperature (T 1 ); (3) subjecting the semiconductor film to heat treatment at a temperature (T 2 ) not higher than the melting point of the semiconductor film, thereby enlarging its crystalline grain size by a predetermined amount; and (4) removing a surface portion of the semiconductor film whose crystalline grain size is enlarged to make the semiconductor film into a thin film with a predetermined thickness.
Claim 2
Independent Claim
133 words
A method of manufacturing a semiconductor device having a semiconductor film carrier mobility not lower than 10 cm 2 /V·sec, comprising the steps of: (1) heating a non-crystalline insulating substrate to maintain the substrate at a temperature above a crystallization temperature of the semiconductor film to be formed; (2) depositing a polycrystalline semiconductor film of sufficient thickness on the substrate while it is maintained at the temperature (T 1 ); (3) subjecting the semiconductor film to heat treatment at a temperature (T 2 ) not higher than the melting point of the semiconductor film, thereby enlarging its crystalline grain size by a predetermined amount; and (4) removing a surface portion of the semiconductor film whose crystalline grain size is enlarged to make the semiconductor film into a thin film with a predetermined thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |