Patent US2839032A successfully refreshed from Google Patents.
US4956693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1987-03-19
•
Granted: 1990-09-11
•
Expires: 2007-03-19
Abstract
Abstract Disclosed is a semiconductor device having a support region, an element-forming region (e.g., an epitaxial layer) and a buried layer between the support region and the element-forming region, with at least one of a MOS element and a bipolar element being formed in the element-forming region. The feature of the present invention resides in that atoms of at least one element selected from oxygen, nitrogen, carbon, argon, neon, krypton and helium is contained in a layer in at least one of the element-forming region and the buried layer, so as to suppress auto-doping of impurities from the buried layer into the element-forming region and suppress swelling of the buried layer.
Inventors
- 👤 Yasuo Sawahata
- 👤 Ryuichi Saito
- 👤 Naohiro Momma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/80; H10D62/83; H10D62/834; H10P30/208; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
131 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen, carbon, argon, neon, krypton and helium, is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said device includes both a MOS element and a bipolar element, the impurity-containing semiconductor layer being formed only under the MOS element.
Claim 2
Dependent Claim
131 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen, carbon, argon, neon, krypton and helium, is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said device includes both a MOS element and a bipolar element, the impurity-containing semiconductor layer being formed only under the MOS element.
Claim 3
Dependent Claim
153 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefore, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon, is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said bipolar element is provided in the element-forming region of the semiconductor substrate, said bipolar element including a collector region, and the buried layer is provided beneath the element-forming region at the location of the bipolar element, the buried layer constituting a collector region of the bipolar element.
Claim 4
Dependent Claim
153 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefore, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon, is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said bipolar element is provided in the element-forming region of the semiconductor substrate, said bipolar element including a collector region, and the buried layer is provided beneath the element-forming region at the location of the bipolar element, the buried layer constituting a collector region of the bipolar element.
Claim 5
Dependent Claim
37 words
A semiconductor device according to claim 2, wherein said bipolar element is a bipolar transistor, the bipolar transistor including a base region and emitter region, each provided in said element-forming region, in addition to said collector region.
Claim 6
Dependent Claim
134 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein both the MOS element and the bipolar element are provided in the element-forming region of the semiconductor substrate, and wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer being provided only under the MOS element.
Claim 7
Dependent Claim
134 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein both the MOS element and the bipolar element are provided in the element-forming region of the semiconductor substrate, and wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer being provided only under the MOS element.
Claim 8
Dependent Claim
119 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer being provided across the entire semiconductor substrate.
Claim 9
Dependent Claim
119 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer thereon, the impurity-containing semiconductor layer being provided across the entire semiconductor substrate.
Claim 10
Dependent Claim
144 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein the device includes at least two MOS elements, a PMOS element and an NMOS element, whereby CMOS structure is provided in the substrate, wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said impurity-containing semiconductor layer is located underneath both said PMOS element and said NMOS element.
Claim 11
Dependent Claim
144 words
In a semiconductor device in which at least one of a MOS element and a bipolar element is provided in an element-forming region of a semiconductor substrate, and which has a buried layer formed between said element-forming region and a support region therefor, the improvement wherein the device includes at least two MOS elements, a PMOS element and an NMOS element, whereby CMOS structure is provided in the substrate, wherein an impurity-containing semiconductor layer, containing atoms of at least one kind of element selected from the group consisting of oxygen, nitrogen and carbon is provided on at least a portion of said buried layer so as to suppress swelling of the buried layer as compared to swelling of the buried layer without said impurity-containing semiconductor layer thereon, and wherein said impurity-containing semiconductor layer is located underneath both said PMOS element and said NMOS element.
References Cited (Backward Citations)
US3622382A
Cited
US4082571A
Cited
US4053925A
Cited
US4490182A
Cited
US4559696A
Cited
US4694321A
Cited
US4689667A
Cited
JPH047626A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-10 | 1994-03-12 | 1994-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-10 | 1998-03-12 | 1998-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-10 | 2002-03-12 | 2002-09-11 | $7700.00 | Window Closed / Lapsed |