Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
318 words
A method of making an alternating current full wave rectifier circuit for a passive integrated transponder in an integrated circuit chip, said passive integrated transponder having a utilization circuit characterized by a predetermined maximum operating voltage comprising, forming first, second, third, and fourth MOS transistors characterized by a breakdown voltage greater than twice said maximum operating voltage of said utilization circuit, the forming of each of said first through fourth MOS transistors including the steps of forming spaced apart source and drain electrodes with each of said spaced apart source and drain electrodes consisting of a first and a second dopant region, said first dopant region being of a second conductivity type and formed by a first implant with a first dopant concentration in a semiconductor substrate of a first conductivity type, said second dopant region being of said second conductivity type and formed by a second implant with a second dopant concentration higher than said first dopant concentration, forming a gate electrode by depositing insulative material between ,said spaced apart source and drain electrodes and depositing conductive material over said insulative material to form gate regions over the insulative material, covering said spaced apart source and drain electrodes and gate electrode with an oxide, the combination of the distance between said spaced apart source and drain electrodes, dopant concentrations of said first and second dopant regions and thicknesses of said insulative material and said oxide resulting in said breakdown voltage greater than twice said maximum operating voltage of said utilization circuit, depositing conductive layers for interconnecting said spaced apart source and drain electrodes and said gate electrode of said first through fourth MOS transistors in a full wave rectifier circuit arrangement having a pair of inputs and a pair of outputs, and connecting a coil to said pair of inputs and coupling said utilization circuit to said pair of outputs for drawing power therefrom as a load.
Claim 2
Independent Claim
318 words
A method of making an alternating current full wave rectifier circuit for a passive integrated transponder in an integrated circuit chip, said passive integrated transponder having a utilization circuit characterized by a predetermined maximum operating voltage comprising, forming first, second, third, and fourth MOS transistors characterized by a breakdown voltage greater than twice said maximum operating voltage of said utilization circuit, the forming of each of said first through fourth MOS transistors including the steps of forming spaced apart source and drain electrodes with each of said spaced apart source and drain electrodes consisting of a first and a second dopant region, said first dopant region being of a second conductivity type and formed by a first implant with a first dopant concentration in a semiconductor substrate of a first conductivity type, said second dopant region being of said second conductivity type and formed by a second implant with a second dopant concentration higher than said first dopant concentration, forming a gate electrode by depositing insulative material between ,said spaced apart source and drain electrodes and depositing conductive material over said insulative material to form gate regions over the insulative material, covering said spaced apart source and drain electrodes and gate electrode with an oxide, the combination of the distance between said spaced apart source and drain electrodes, dopant concentrations of said first and second dopant regions and thicknesses of said insulative material and said oxide resulting in said breakdown voltage greater than twice said maximum operating voltage of said utilization circuit, depositing conductive layers for interconnecting said spaced apart source and drain electrodes and said gate electrode of said first through fourth MOS transistors in a full wave rectifier circuit arrangement having a pair of inputs and a pair of outputs, and connecting a coil to said pair of inputs and coupling said utilization circuit to said pair of outputs for drawing power therefrom as a load.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the substrate of a first conductivity type is a P-type silicon substrate.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said coil is deposited on said substrate.
Claim 5
Dependent Claim
18 words
The method of claim 3 wherein said coil is a resonant circuit comprising an inductor and a capacitor.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said substrate is disposed on a card.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein said interconnecting of electrodes is by depositing a single metal layer.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said interconnecting of electrodes is by depositing a double metal layer.
Claim 9
Dependent Claim
11 words
The method of claim 1 wherein said coil is an antenna.