US5863832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system
Assignee: Intel Corp
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Filing: 1996-06-28
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Granted: 1999-01-26
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Expires: 2016-06-28
Abstract
Abstract The present invention provides an interconnect system. The interconnect system includes a substrate, a first dielectric layer deposited upon the substrate. The interconnect system further includes at least two electrically conductive interconnect lines formed upon the first dielectric layer. Each of the at least two interconnect lines have a top surface and side surfaces. Adjacent side surfaces of two adjacent interconnect lines define therebetween a space that has a dielectric constant substantially equal to 1. A dielectric film is bonded upon the top surface of the at least two interconnect lines. The dielectric film substantially prevents obstruction of the space by further process.
Inventors
- 👤 Brian Doyle
- 👤 Quat T. Yu
- 👤 Leopoldo D. Yau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/072; H10W20/40; H10W20/45; H10W20/46; H10W20/495; H10W20/031; H10W20/032; H10W20/038; H10W20/039; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S438/00; Y10S438/914; Y10S438/916; Y10S438/977
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
88 words
A method for depositing a dielectric film upon a top surface of at least two electrically conductive interconnect lines of an interconnect system, said two electrically conductive interconnect lines being spaced apart from each other, the method comprising the steps of: bonding said dielectric film to a film carrier; placing said film carrier with said dielectric film upon said top surface of said at least two interconnect lines; bonding said dielectric film to said at least two interconnect lines; and debonding said film carrier from said dielectric film.
Claim 2
Independent Claim
88 words
A method for depositing a dielectric film upon a top surface of at least two electrically conductive interconnect lines of an interconnect system, said two electrically conductive interconnect lines being spaced apart from each other, the method comprising the steps of: bonding said dielectric film to a film carrier; placing said film carrier with said dielectric film upon said top surface of said at least two interconnect lines; bonding said dielectric film to said at least two interconnect lines; and debonding said film carrier from said dielectric film.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said at least two interconnect lines have a cladding bonded thereon.
Claim 4
Dependent Claim
50 words
The method of claim 2 wherein said film carrier has a top surface configured to debond from said dielectric film when said film carrier with the dielectric film bonded thereto are heated to a bonding temperature at which the dielectric film thermally bonds to the cladding of the interconnect lines.
Claim 5
Dependent Claim
49 words
The method of claim 1 wherein said step of bonding said dielectric film onto said at least two interconnect lines includes heating the film carrier with the dielectric film bonded thereto to a bonding temperature at which the dielectric film thermally bonds to the cladding of the interconnect lines.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein said debonding of said film carrier takes place substantially concomitantly with said step of bonding.
Claim 7
Dependent Claim
20 words
The method of claim 4 wherein said bonding temperature causes said debonding of said film carrier from said dielectric film.
Claim 8
Dependent Claim
18 words
The method of claim 4 wherein said bonding temperature does not exceed a temperature of approximately 400° C.
Claim 9
Dependent Claim
14 words
The method of claim 4 wherein said film carrier is implanted with ionized Hydrogen.
Claim 10
Dependent Claim
14 words
The method of claim 8 wherein said dielectric film is implanted with ionized Hydrogen.
Claim 11
Dependent Claim
24 words
The method of claim 1, wherein said cladding is made of material that minimizes electromigration in said at least two electrically conductive interconnect lines.
Claim 12
Dependent Claim
16 words
The method of claim 10, wherein said cladding is made of silicon dioxide (SiO 2 ).
Claim 13
Dependent Claim
18 words
The method of claim 10, wherein said cladding is made of silicon nitride (Si 3 N 4 ).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-25 | 2002-07-27 | 2003-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-25 | 2006-07-27 | 2007-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-25 | 2010-07-27 | 2011-01-26 | $7700.00 | Window Closed / Lapsed |