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RuSixOy-containing adhesion layers and process for fabricating the same

Assignee: Mosaid Technologies Inc
•
Filing: 2002-02-12
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Granted: 2003-09-09
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Expires: 2022-02-12
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Abstract

Abstract A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSi x O y , where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSi x O y by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSi x O y from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSi x O y .

Inventors

  • 👤 Eugene P. Marsh
  • 👤 Brenda D. Kraus

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:07
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D1/682

Claims Analysis

Total Claims: 28
Claim 1
Independent Claim 114 words
A capacitor structure comprising: a substrate assembly having a surface; an insulation layer formed on said substrate assembly having a contact opening therein defined by said substrate assembly surface and one or more side surfaces; a first electrode formed on the substrate assembly surface and the one or more side surfaces of said contact opening; a high dielectric constant material on at least a portion of the first electrode; and a second electrode on the high dielectric constant material, wherein at least one of the first and second electrodes comprises an adhesion layer formed of RuSi x O y , where x and y are in a range of about 0.01 to about 10.
Claim 2
Dependent Claim 114 words
A capacitor structure comprising: a substrate assembly having a surface; an insulation layer formed on said substrate assembly having a contact opening therein defined by said substrate assembly surface and one or more side surfaces; a first electrode formed on the substrate assembly surface and the one or more side surfaces of said contact opening; a high dielectric constant material on at least a portion of the first electrode; and a second electrode on the high dielectric constant material, wherein at least one of the first and second electrodes comprises an adhesion layer formed of RuSi x O y , where x and y are in a range of about 0.01 to about 10.
Claim 3
Dependent Claim 18 words
The structure of claim 1 , wherein x is in a range of about 0.01 to about 3.
Claim 4
Dependent Claim 18 words
The structure of claim 1 , wherein y is in a range of about 0.01 to about 1.
Claim 5
Dependent Claim 11 words
The structure of claim 3 , wherein x is about 0.4.
Claim 6
Dependent Claim 11 words
The structure of claim 3 , wherein y is about 0.05.
Claim 7
Dependent Claim 32 words
The structure of claim 1 , wherein the adhesion layer of the at least one of the first and second electrodes is formed on at least a portion of a silicon-containing region.
Claim 8
Dependent Claim 17 words
The structure of claim 1 , further comprising one or more conductive layers over the adhesion layer.
Claim 9
Dependent Claim 20 words
The structure of claim 7 , wherein the one or more conductive layers are formed of at least one metal.
Claim 10
Dependent Claim 22 words
The structure of claim 7 , wherein the one or more conductive layers are formed of at least one conductive metal oxide.
Claim 11
Dependent Claim 17 words
The structure of claim 6 , further comprising one or more conductive layers over the adhesion layer.
Claim 12
Dependent Claim 20 words
The structure of claim 10 , wherein the one or more conductive layers are formed of at least one metal.
Claim 13
Dependent Claim 22 words
The structure of claim 10 , wherein the one or more conductive layers are formed of at least one conductive metal oxide.
Claim 14
Dependent Claim 46 words
The structure of claim 7 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Pt, Ir, W, WN, TaN, Os, and OsO 2 .
Claim 15
Dependent Claim 46 words
The structure of claim 10 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Pt, Ir, W, WN, TaN, Os, and OsO 2 .
Claim 16
Dependent Claim 20 words
The structure of claim 1 , wherein the high dielectric constant material overlies an entire surface of the first electrode.
Claim 17
Dependent Claim 23 words
The structure of claim 1 , wherein the first and second electrodes comprise an adhesion layer formed of RuSi x O y .
Claim 18
Dependent Claim 22 words
The structure of claim 1 , wherein the adhesion layer consists of three to five monolayers of RuSi x O y .
Claim 19
Dependent Claim 106 words
A capacitor structure comprising: a substrate assembly having a surface; an insulation layer formed on said substrate assembly having a contact opening therein defined by said substrate assembly surface and one or more side surfaces; a first electrode formed on the substrate assembly surface and the one or more side surfaces of said contact opening; a high dielectric constant material on at least a portion of the first electrode; and a second electrode on the high dielectric constant material, wherein at least one of the first and second electrodes comprises an adhesion layer formed of RuSixOy, where x is about 0.4 and y is about 0.05.
Claim 20
Dependent Claim 106 words
A capacitor structure comprising: a substrate assembly having a surface; an insulation layer formed on said substrate assembly having a contact opening therein defined by said substrate assembly surface and one or more side surfaces; a first electrode formed on the substrate assembly surface and the one or more side surfaces of said contact opening; a high dielectric constant material on at least a portion of the first electrode; and a second electrode on the high dielectric constant material, wherein at least one of the first and second electrodes comprises an adhesion layer formed of RuSixOy, where x is about 0.4 and y is about 0.05.
Claim 21
Dependent Claim 32 words
The structure of claim 18 , wherein the adhesion layer of the at least one of the first and second electrodes is formed on at least a portion of a silicon-containing region.
Claim 22
Dependent Claim 17 words
The structure of claim 18 , further comprising one or more conductive layers over the adhesion layer.
Claim 23
Dependent Claim 20 words
The structure of claim 20 , wherein the one or more conductive layers are formed of at least one metal.
Claim 24
Dependent Claim 22 words
The structure of claim 20 , wherein the one or more conductive layers are formed of at least one conductive metal oxide.
Claim 25
Dependent Claim 46 words
The structure of claim 20 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Pt, Ir, W, WN, TaN, Os, and OsO 2 .
Claim 26
Dependent Claim 20 words
The structure of claim 18 , wherein the high dielectric constant material overlies an entire surface of the first electrode.
Claim 27
Dependent Claim 23 words
The structure of claim 18 , wherein the first and second electrodes comprise an adhesion layer formed of RuSi x O y .
Claim 28
Dependent Claim 22 words
The structure of claim 18 , wherein the adhesion layer consists of three to five monolayers of RuSi x O y .

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3.5 Years (Year 4) 2006-09-08 2007-03-10 2007-09-09 $2000.00 Window Closed / Lapsed
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