US6617183B2
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Method for forming p-type semiconductor film and light emitting device using the same
Assignee: Murata Manufacturing Co Ltd
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Filing: 2001-04-19
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Granted: 2003-09-09
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Expires: 2021-04-19
Abstract
Abstract A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
Inventors
- 👤 Michio Kadota
- 👤 Yasuhiro Negoro
- 👤 Yoshinori Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:01
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P30/21; H10P30/28
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
84 words
A method for forming a p-type semiconductor film comprising the steps of: providing on a substrate a group II-VI compound semiconductor film comprising one of ZnO, Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1); doping said semiconductor film with a p-type impurity by an ion implanting method; and activating the p-type impurity by annealing the doped semiconductor film at 450° C. or more until the resistivity of the doped semiconductor film is decreased to 10 6 Ω·cm or less.
Claim 2
Independent Claim
84 words
A method for forming a p-type semiconductor film comprising the steps of: providing on a substrate a group II-VI compound semiconductor film comprising one of ZnO, Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1); doping said semiconductor film with a p-type impurity by an ion implanting method; and activating the p-type impurity by annealing the doped semiconductor film at 450° C. or more until the resistivity of the doped semiconductor film is decreased to 10 6 Ω·cm or less.
Claim 3
Dependent Claim
50 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the semiconductor film providing step includes the steps of: sputtering a target made of either Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1) to form the semiconductor film on the substrate.
Claim 4
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the p-type impurity comprises an element selected from the group consisting of As, N, P, Sb, and Bi.
Claim 5
Dependent Claim
34 words
A method for forming a p-type semiconductor film according to claim 2 , wherein the semiconductor film has a resistivity of 10 6 Ω·cm or more prior to being doped with the p-type impurity.
Claim 6
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 4 , wherein the semiconductor film has a purity of 99.999% or more prior to being doped with the p-type impurity.
Claim 7
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the semiconductor film is doped with the p-type impurity in an amount of 10 17 atoms/cm 3 .
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