US6617183B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming p-type semiconductor film and light emitting device using the same
Assignee: Murata Manufacturing Co Ltd
•
Filing: 2001-04-19
•
Granted: 2003-09-09
•
Expires: 2021-04-19
Abstract
Abstract A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
Inventors
- 👤 Michio Kadota
- 👤 Yasuhiro Negoro
- 👤 Yoshinori Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:23
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P30/21; H10P30/28
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
84 words
A method for forming a p-type semiconductor film comprising the steps of: providing on a substrate a group II-VI compound semiconductor film comprising one of ZnO, Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1); doping said semiconductor film with a p-type impurity by an ion implanting method; and activating the p-type impurity by annealing the doped semiconductor film at 450° C. or more until the resistivity of the doped semiconductor film is decreased to 10 6 Ω·cm or less.
Claim 2
Independent Claim
84 words
A method for forming a p-type semiconductor film comprising the steps of: providing on a substrate a group II-VI compound semiconductor film comprising one of ZnO, Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1); doping said semiconductor film with a p-type impurity by an ion implanting method; and activating the p-type impurity by annealing the doped semiconductor film at 450° C. or more until the resistivity of the doped semiconductor film is decreased to 10 6 Ω·cm or less.
Claim 3
Dependent Claim
50 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the semiconductor film providing step includes the steps of: sputtering a target made of either Mg X Zn 1−X O (0≦X≦1) or Cd X Zn 1−X O (0≦X≦1) to form the semiconductor film on the substrate.
Claim 4
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the p-type impurity comprises an element selected from the group consisting of As, N, P, Sb, and Bi.
Claim 5
Dependent Claim
34 words
A method for forming a p-type semiconductor film according to claim 2 , wherein the semiconductor film has a resistivity of 10 6 Ω·cm or more prior to being doped with the p-type impurity.
Claim 6
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 4 , wherein the semiconductor film has a purity of 99.999% or more prior to being doped with the p-type impurity.
Claim 7
Dependent Claim
32 words
A method for forming a p-type semiconductor film according to claim 1 , wherein the semiconductor film is doped with the p-type impurity in an amount of 10 17 atoms/cm 3 .
References Cited (Backward Citations)
GB2081013A
Cited
JPH02142188A
Cited
US5227328A
Cited
US5399185A
Cited
US5324365A
Cited
EP0541373A2
Cited
US5699035A
Cited
US5262349A
Cited
US5432397A
Cited
JPH07307490A
Cited
US6146765A
Cited
US6057561A
Cited
US5976958A
Cited
WO2000008691A1
Cited
US6291085B1
Cited
US6448585B1
Cited
US6259016B1
Cited
US20020084455A1
Cited
WO2001043165A2
Cited
US6423983B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-09-08 | 2007-03-10 | 2007-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-08 | 2011-03-10 | 2011-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-08 | 2015-03-10 | 2015-09-09 | $7700.00 | Window Closed / Lapsed |