US6423983B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
Assignee: North Carolina State University
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Filing: 2000-10-13
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Granted: 2002-07-23
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Expires: 2020-10-13
Abstract
Abstract An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers may be between the alloy layer and the substrate. The alloy layer may be domain-matched epitaxially grown directly on the substrate, or may be lattice-matched epitaxially grown directly on the buffer layer. The cubic layer may also be used to form single and multiple quantum wells. Accordingly, electronic devices having wider bandgap, increased binding energy of excitons, and/or reduced density of growth and/or misfit dislocations in the active layers as compared with conventional III-nitride electronic devices may be provided.
Inventors
- 👤 Jagdish Narayan
- 👤 Ajay Kumar Sharma
- 👤 John F. Muth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:35
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10F; H10F71/00; H10F71/125; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
30 words
An electronic device comprising: a substrate; and an alloy layer comprising MgO and at least one of ZnO and CdO on the substrate, wherein the alloy has a cubic structure.
Claim 2
Dependent Claim
30 words
An electronic device comprising: a substrate; and an alloy layer comprising MgO and at least one of ZnO and CdO on the substrate, wherein the alloy has a cubic structure.
Claim 3
Dependent Claim
31 words
The device according to claim 1 , wherein the alloy layer consists essentially of between about 0.1 and 40 at. % zinc, and between about 60 and 99.9 at. % magnesium.
Claim 4
Dependent Claim
31 words
The device according to claim 1 , wherein the alloy layer consists essentially of between about 0.1 and 15 at. % cadmium, and between about 85 and 99.9 at. % magnesium.
Claim 5
Dependent Claim
16 words
The device according to claim 1 , wherein the alloy layer is a monocrystalline alloy layer.
Claim 6
Dependent Claim
17 words
The device according to claim 1 , wherein the substrate consists of material having a cubic structure.
Claim 7
Dependent Claim
28 words
The device according to claim 1 , wherein the substrate consists of a material having a cubic structure selected from the group consisting of MgO, Si, and GaAs.
Claim 8
Dependent Claim
18 words
The device according to claim 1 , wherein the substrate consists of material having a hexagonal wurtzite structure.
Claim 9
Dependent Claim
34 words
The device according to claim 1 , wherein the substrate consists of a material having a hexagonal structure selected from the group consisting of α-Al 2 O 3 , 6H-SiC, AlN, and GaN (0001).
Claim 10
Dependent Claim
22 words
The device according to claim 1 , wherein the alloy layer is a domain-matched epitaxial layer that is directly on the substrate.
Claim 11
Dependent Claim
19 words
The device according to claim 1 , further comprising a buffer layer between the substrate and the alloy layer.
Claim 12
Dependent Claim
35 words
The device according to claim 10 , wherein the buffer layer is a domain-matched epitaxial layer directly on the substrate, and wherein the alloy layer is a lattice-matched epitaxial layer directly on the buffer layer.
Claim 13
Dependent Claim
69 words
The device according to claim 10 , wherein the alloy layer is a first alloy layer having a first bandgap, and wherein the device further comprises: a second alloy layer having a second bandgap narrower than the first bandgap on the first alloy layer; and a third alloy layer having a third bandgap wider than the second bandgap on the second alloy layer to thereby provide a quantum well.
Claim 14
Dependent Claim
34 words
The device according to claim 12 , wherein the third alloy layer is an alloy layer comprising magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure.
Claim 15
Dependent Claim
34 words
The device according to claim 12 , wherein the device comprises a plurality of alternating layers of the first alloy and the second alloy on the substrate to thereby provide a multiple quantum well.
Claim 16
Dependent Claim
19 words
The device according to claim 1 , further comprising a TiN layer between the substrate and the alloy layer.
Claim 17
Dependent Claim
26 words
The device according to claim 15 , wherein the substrate is Si, and wherein the TiN layer and the Si substrate form a TiN/Si epilayer heterostructure.
Claim 18
Dependent Claim
20 words
The device according to claim 16 , further comprising a MgO layer between the TiN layer and the alloy layer.
Claim 19
Dependent Claim
29 words
The device according to claim 17 , wherein the substrate is Si, and wherein the MgO layer, the TiN layer, and the Si substrate form a MgO/TiN/Si epilayer heterostructure.
Claim 20
Dependent Claim
15 words
The device according to claim 1 , wherein the electronic device is an optoelectronic device.
Claim 21
Dependent Claim
28 words
The device according to claim 19 , wherein the optoelectronic device comprises at least one of light-emitting diodes, laser diodes, photodetectors, optical modulators, and broad band light sources.
Claim 22
Dependent Claim
15 words
The device according to claim 1 , wherein the electronic device is a microelectronic device.
Claim 23
Dependent Claim
22 words
The device according to claim 21 , wherein the microelectronic device comprises at least one of transistors, field emitters and power devices.
Claim 24
Dependent Claim
34 words
An electronic device comprising: a monocrystalline silicon substrate; and an alloy layer comprising MgO and at least one of ZnO and CdO on the monocrystalline silicon substrate, wherein the alloy has a cubic structure.
Claim 25
Dependent Claim
34 words
An electronic device comprising: a monocrystalline silicon substrate; and an alloy layer comprising MgO and at least one of ZnO and CdO on the monocrystalline silicon substrate, wherein the alloy has a cubic structure.
Claim 26
Dependent Claim
17 words
The device according to claim 23 , further comprising a microelectronic device in the monocrystalline silicon substrate.
Claim 27
Dependent Claim
31 words
The device according to claim 23 , wherein the alloy layer consists essentially of between about 0.1 and 40 at. % zinc, and between about 60 and 99.9 at. % magnesium.
Claim 28
Dependent Claim
31 words
The device according to claim 23 , wherein the alloy layer consists essentially of between about 0.1 and 15 at. % cadmium, and between about 85 and 99.9 at. % magnesium.
Claim 29
Dependent Claim
16 words
The device according to claim 23 , wherein the alloy layer is a monocrystalline alloy layer.
Claim 30
Dependent Claim
23 words
The device according to claim 23 , wherein the monocrystalline silicon substrate comprises a substrate and a monocrystalline silicon layer on the substrate.
Claim 31
Dependent Claim
22 words
The device according to claim 23 , wherein the alloy layer is a domain-matched epitaxial layer that is directly on the substrate.
Claim 32
Dependent Claim
19 words
The device according to claim 23 , further comprising a buffer layer between the substrate and the alloy layer.
Claim 33
Dependent Claim
35 words
The device according to claim 30 , wherein the buffer layer is a domain-matched epitaxial layer directly on the substrate, and wherein the alloy layer is a lattice-matched epitaxial layer directly on the buffer layer.
Claim 34
Dependent Claim
69 words
The device according to claim 30 , wherein the alloy layer is a first alloy layer having a first bandgap, and wherein the device further comprises: a second alloy layer having a second bandgap narrower than the first bandgap on the first alloy layer; and a third alloy layer having a third bandgap wider than the second bandgap on the second alloy layer to thereby provide a quantum well.
Claim 35
Dependent Claim
34 words
The device according to claim 32 , wherein the third alloy layer is an alloy layer comprising magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure.
Claim 36
Dependent Claim
34 words
The device according to claim 32 , wherein the device comprises a plurality of alternating layers of the first alloy and the second alloy on the substrate to thereby provide a multiple quantum well.
Claim 37
Dependent Claim
19 words
The device according to claim 23 , further comprising a TiN layer between the substrate and the alloy layer.
Claim 38
Dependent Claim
26 words
The device according to claim 35 , wherein the substrate is Si, and wherein the TiN layer and the Si substrate form a TiN/Si epilayer heterostructure.
Claim 39
Dependent Claim
20 words
The device according to claim 36 , further comprising a MgO layer between the TiN layer and the alloy layer.
Claim 40
Dependent Claim
29 words
The device according to claim 37 , wherein the substrate is Si, and wherein the MgO layer, the TiN layer, and the Si substrate form a MgO/TiN/Si epilayer heterostructure.
Claim 41
Dependent Claim
15 words
The device according to claim 23 , wherein the electronic device is an optoelectronic device.
Claim 42
Dependent Claim
28 words
The device according to claim 39 , wherein the optoelectronic device comprises at least one of light-emitting diodes, laser diodes, photodetectors, optical modulators, and broad band light sources.
Claim 43
Dependent Claim
15 words
The device according to claim 23 , wherein the electronic device is a microelectronic device.
Claim 44
Dependent Claim
22 words
The device according to claim 41 , wherein the microelectronic device comprises at least one of transistors, field emitters and power devices.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-07-22 | 2006-01-21 | 2006-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-22 | 2010-01-21 | 2010-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-22 | 2014-01-21 | 2014-07-23 | $7700.00 | Window Closed / Lapsed |