US5851905A
Expired / Lapsed
US
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Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
Assignee: North Carolina State University
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Filing: 1997-08-12
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Granted: 1998-12-22
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Expires: 2017-08-12
Abstract
Abstract Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
Inventors
- 👤 Forrest Gregg McIntosh
- 👤 Salah Mohamed Bedair
- 👤 Nadia Ahmed El-Masry
- 👤 John Claassen Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:42
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/811; H10H20/812; H10H20/813
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
41 words
A method of forming indium gallium nitride or aluminum indium gallium nitride in a reaction chamber comprising the step of: flowing precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber in the presence of hydrogen gas.
Claim 2
Independent Claim
41 words
A method of forming indium gallium nitride or aluminum indium gallium nitride in a reaction chamber comprising the step of: flowing precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber in the presence of hydrogen gas.
Claim 3
Dependent Claim
40 words
A method according to claim 1 wherein said flowing step comprises the step of flowing hydrogen as a carrier gas for at least one of the precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber.
Claim 4
Dependent Claim
63 words
A method according to claim 1 wherein said flowing step comprises the step of flowing the precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber in non-hydrogen carrier gas and flowing hydrogen gas in the reaction chamber in a gas flow which is separate from the flow of precursors of indium gallium nitride or aluminum indium gallium nitride.
Claim 5
Dependent Claim
52 words
A method according to claim 1 wherein said hydrogen gas is present in an amount which is sufficient to produce indium gallium nitride or aluminum indium gallium nitride having optical emission properties, but is not so excessive to prevent incorporation of indium into the indium gallium nitride or aluminum indium gallium nitride.
Claim 6
Dependent Claim
23 words
A method according to claim 1 wherein the hydrogen is flowed through the reaction chamber at a flow rate which prevents indium segregation.
Claim 7
Dependent Claim
24 words
A method according to claim 1 wherein said hydrogen is flowed through the reaction chamber at a rate of between 4 and 80 sccm.
Claim 8
Dependent Claim
26 words
A method according to claim 1 wherein said flowing step comprises the step of pulse flowing the precursors of indium gallium nitride or aluminum gallium nitride.
Claim 9
Independent Claim
57 words
A method of controlling the percentage of indium which is incorporated into indium gallium nitride or aluminum indium gallium nitride during formation thereof in a reaction chamber comprising the step of: flowing precursors of indium gallium nitride or aluminum indium gallium nitride in the deposition chamber while introducing a controlled hydrogen gas flow in the deposition chamber.
Claim 10
Independent Claim
57 words
A method of controlling the percentage of indium which is incorporated into indium gallium nitride or aluminum indium gallium nitride during formation thereof in a reaction chamber comprising the step of: flowing precursors of indium gallium nitride or aluminum indium gallium nitride in the deposition chamber while introducing a controlled hydrogen gas flow in the deposition chamber.
Claim 11
Dependent Claim
41 words
A method according to claim 8 wherein said flowing step comprises the step of increasing the controlled hydrogen gas flow to decrease the percentage of indium which is incorporated into indium gallium nitride or aluminum indium gallium nitride during formation thereof.
Claim 12
Dependent Claim
41 words
A method according to claim 8 wherein said flowing step comprises the step of decreasing the controlled hydrogen gas flow to increase the percentage of indium which is incorporated into indium gallium nitride or aluminum indium gallium nitride during formation thereof.
Claim 13
Dependent Claim
44 words
A method according to claim 8 wherein said flowing step comprises the step of introducing a controlled flow of hydrogen as a carrier gas for at least one of the precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber.
Claim 14
Dependent Claim
67 words
A method according to claim 8 wherein said flowing step comprises the step of flowing the precursors of indium gallium nitride or aluminum indium gallium nitride in the reaction chamber in non-hydrogen carrier gas and introducing a controlled flow of hydrogen gas in the reaction chamber in a gas flow which is separate from the flow of precursors of indium gallium nitride or aluminum indium gallium nitride.
Claim 15
Dependent Claim
26 words
A method according to claim 8, wherein said flowing step comprises the step of pulse flowing the precursors of indium gallium nitride or aluminum gallium nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-21 | 2002-06-22 | 2002-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-21 | 2006-06-22 | 2006-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-21 | 2010-06-22 | 2010-12-22 | $7700.00 | Window Closed / Lapsed |