Abstract In a method for producing a II-VI compound semiconductor device including mercury, a thin film of a group II element or a group II element compound, which is a solid at room temperature, is deposited on a surface of a p type II-VI compound semiconductor. Annealing is carried out to diffuse the group II element from the thin film into the p type II-VI compound semiconductor whereby a region of the p type II-VI compound semiconductor on which the thin film is present is converted to n type, resulting in a p-n junction. Therefore, instruments and materials are easily handled, increasing work efficiency and productivity. In addition, the annealing is carried out without a complicated temperature profile, resulting in a simple process.
A method for producing a semiconductor device including controlling the conductivity type of a p type II-VI compound semiconductor including mercury comprising: depositing a thin film selected from the group consisting of zinc and zinc compounds on a surface of a p type II-VI compound semiconductor including mercury; and annealing said thin film and said p type II-VI compound semiconductor including mercury at an elevated temperature for less than one day to diffuse zinc into said p type II-VI compound semiconductor including mercury whereby a region of said p type II-VI compound semiconductor including mercury adjacent said thin film is converted to n type conductivity, resulting in a p-n junction.
Claim 2
Independent Claim
110 words
A method for producing a semiconductor device including controlling the conductivity type of a p type II-VI compound semiconductor including mercury comprising: depositing a thin film selected from the group consisting of zinc and zinc compounds on a surface of a p type II-VI compound semiconductor including mercury; and annealing said thin film and said p type II-VI compound semiconductor including mercury at an elevated temperature for less than one day to diffuse zinc into said p type II-VI compound semiconductor including mercury whereby a region of said p type II-VI compound semiconductor including mercury adjacent said thin film is converted to n type conductivity, resulting in a p-n junction.
Claim 3
Dependent Claim
10 words
The method of claim 1 including annealing at atmospheric pressure.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the p type II-VI compound semiconductor including mercury is CdHgTe.
Claim 5
Dependent Claim
22 words
The method of claim 3 including annealing at about 200° C. for about ten hours in a nitrogen ambient at atmospheric pressure.
Claim 6
Dependent Claim
19 words
The method of claim 1 including annealing at about 200° C. for about twenty hours in an evacuated ampoule.