US4462959A
Expired / Lapsed
US
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HgCdTe Bulk doping technique
Assignee: Texas Instruments Inc
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Filing: 1982-04-05
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Granted: 1984-07-31
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Expires: 2002-04-05
Abstract
Abstract Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.
Inventors
- 👤 John H. Tregilgas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:59
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; Y; Y10; Y10S; Y10S420/00; Y10S420/903; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
86 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant uniformly distributed throughout is formed.
Claim 2
Independent Claim
86 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant uniformly distributed throughout is formed.
Claim 3
Independent Claim
99 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said dopant is selected from the group consisting of phosphorus, arsenic, antimony, and bismuth.
Claim 4
Independent Claim
99 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said dopant is selected from the group consisting of phosphorus, arsenic, antimony, and bismuth.
Claim 5
Independent Claim
97 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said first concentration of said dopant in mercury comprises a saturated concentration.
Claim 6
Independent Claim
97 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said first concentration of said dopant in mercury comprises a saturated concentration.
Claim 7
Dependent Claim
19 words
The process of claim 1, wherein said dopant is selected from the group consisting of copper, gold, and silver.
Claim 8
Dependent Claim
18 words
The process of claim 1, wherein said dopant is selected from the group consisting of indium and gallium.
Claim 9
Independent Claim
100 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said desired concentration of said dopant in HgCdTe is less than 10 16 per cc.
Claim 10
Independent Claim
100 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said desired concentration of said dopant in HgCdTe is less than 10 16 per cc.
Claim 11
Dependent Claim
17 words
The process of claim 6, wherein said desired concentration is less than 10 15 per cubic centimeter.
Claim 12
Independent Claim
113 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said process of dissolving said dopant in mercury comprises evaporating said dopant in proximity to said mercury, whereby said dopant is deposited into the surface of said mercury.
Claim 13
Independent Claim
113 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said process of dissolving said dopant in mercury comprises evaporating said dopant in proximity to said mercury, whereby said dopant is deposited into the surface of said mercury.
Claim 14
Independent Claim
135 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said process of dissolving said dopant in mercury includes: evaporating said dopant in proximity to said mercury, where said mercury is at an elevated temperature, whereby said dopant is deposited into the surface of said mercury; cooling said mercury to room temperature; and decanting excess precipitated dopant from said mercury.
Claim 15
Independent Claim
135 words
A method for providing bulk HgCdTe having a desired concentration of a selected dopant, comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a concentration of said dopant in said mercury, said final concentration of said dopant in said mercury corresponding to said desired concentration of said dopant in HgCdTe; and compounding said mercury including said final concentration of said dopant, with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant is formed; and wherein said process of dissolving said dopant in mercury includes: evaporating said dopant in proximity to said mercury, where said mercury is at an elevated temperature, whereby said dopant is deposited into the surface of said mercury; cooling said mercury to room temperature; and decanting excess precipitated dopant from said mercury.
Claim 16
Dependent Claim
20 words
The process of claim 9, wherein said dopant is selected from the group consisting of phosphorus, arsenic, antimony, and bismuth.
Claim 17
Dependent Claim
19 words
The product formed by the process of claim 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10.
Claim 18
Dependent Claim
62 words
A bulk composition of matter consisting essentially of: Hg x Cd 1-x Te wherein x has a value between 0.1 and 1; and a P-type dopant uniformly disposed in said Hg x Cd 1-x Te; wherein x has a constant local value throughout said composition; and wherein the concentration of said P-type dopant is less than 10 to the 16th per cc.
Claim 19
Dependent Claim
62 words
A bulk composition of matter consisting essentially of: Hg x Cd 1-x Te wherein x has a value between 0.1 and 1; and a P-type dopant uniformly disposed in said Hg x Cd 1-x Te; wherein x has a constant local value throughout said composition; and wherein the concentration of said P-type dopant is less than 10 to the 16th per cc.
Claim 20
Independent Claim
95 words
A method for providing bulk HgCdTe having a desired concentration of selected dopant uniformly distributed throughout comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a first concentration of said desired dopant, said first concentration being higher than final concentration; diluting said mercury with additional pure mercury, to achieve said desired final concentration of said dopant in said mercury; and compounding said mercury including said final concentration of said dopant with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant uniformly distributed throughout is formed.
Claim 21
Independent Claim
95 words
A method for providing bulk HgCdTe having a desired concentration of selected dopant uniformly distributed throughout comprising the steps of: providing pure liquid mercury; dissolving said desired dopant in mercury to achieve a first concentration of said desired dopant, said first concentration being higher than final concentration; diluting said mercury with additional pure mercury, to achieve said desired final concentration of said dopant in said mercury; and compounding said mercury including said final concentration of said dopant with cadmium and tellurium, whereby HgCdTe having said desired concentration of said dopant uniformly distributed throughout is formed.
Claim 22
Dependent Claim
21 words
The method according to claim 13 wherein said dopant is selected from the group consisting of phosphorus, arsenic, antimony and bismuth.
Claim 23
Dependent Claim
19 words
The process according to claim 13 wherein said first concentration of said dopant in mercury comprises a saturated concentration.
Claim 24
Dependent Claim
20 words
The method according to claim 13 wherein said dopant is selected from the group consisting of copper, gold and silver.
Claim 25
Dependent Claim
19 words
The method according to claim 13 wherein said dopant is selected from the group consisting of indium and gallium.
Claim 26
Dependent Claim
23 words
The method according to claim 13 wherein said desired concentration of said dopant in HgCdTe is less than 10 15 per cubic centimeter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-31 | 1988-01-30 | 1988-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-31 | 1992-01-30 | 1992-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-31 | 1996-01-30 | 1996-07-31 | $7700.00 | Window Closed / Lapsed |