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US5227328A
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Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations
Assignee: Philips North America LLC
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Filing: 1992-03-16
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Granted: 1993-07-13
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Expires: 2012-03-16
Abstract
Abstract Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibit a high conversion of the impurities to acceptors, sufficient to render the layers p-type.
Inventors
- 👤 Babar A. Khan
- 👤 Nikhil R. Taskar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:23
CPC Classifications
H; H10; H10P; H10P32/00; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S438/00; Y10S438/902
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
84 words
A method for obtaining a stable p-type epitaxial layer of a II-VI semiconductor compound, the method comprising forming an epitaxial layer of the compound by chemical vapor deposition, in-situ doping the layer with a stable acceptor-type impurity, capping the epitaxial layer with a diffusion-limiting layer, and subjecting the resultant structure to a rapid thermal anneal at a temperature in the range of about 700° to 950° C. for a period of from 10 seconds at 950 degrees C. to 2 minutes at 700° C.
Claim 2
Independent Claim
84 words
A method for obtaining a stable p-type epitaxial layer of a II-VI semiconductor compound, the method comprising forming an epitaxial layer of the compound by chemical vapor deposition, in-situ doping the layer with a stable acceptor-type impurity, capping the epitaxial layer with a diffusion-limiting layer, and subjecting the resultant structure to a rapid thermal anneal at a temperature in the range of about 700° to 950° C. for a period of from 10 seconds at 950 degrees C. to 2 minutes at 700° C.
Claim 3
Independent Claim
67 words
A method for increasing the net acceptor concentration of an epitaxial layer of a II-VI semiconductor compound containing acceptor-type impurities, the method comprising capping the layer with a diffusion-limiting layer, and subjecting the resultant structure to a rapid thermal anneal at a temperature in the range of about 700° to 950° C. for a period of from 10 seconds at 950° to 2 minutes at 700° C.
Claim 4
Independent Claim
67 words
A method for increasing the net acceptor concentration of an epitaxial layer of a II-VI semiconductor compound containing acceptor-type impurities, the method comprising capping the layer with a diffusion-limiting layer, and subjecting the resultant structure to a rapid thermal anneal at a temperature in the range of about 700° to 950° C. for a period of from 10 seconds at 950° to 2 minutes at 700° C.
Claim 5
Dependent Claim
13 words
The method of claim 1 or 2 in which the compound is ZnSe.
Claim 6
Dependent Claim
14 words
The method of claim 1 or 2 in which the acceptor-type impurity is N.
Claim 7
Dependent Claim
27 words
The method of claim 1 or 2 in which the diffusion-limiting layer is selected from the group consisting of Si 3 N 4 and SiO 2 .
Claim 8
Dependent Claim
25 words
The method of claim 2 in which the epitaxial layer is produced by chemical vapor deposition and the stable acceptor-type impurity is doped in situ.
Claim 9
Dependent Claim
28 words
The method of claim 1 in which the epitaxial layer is doped with the stable acceptor-type impurity at a concentration of greater than 1×10 14 per cubic centimeter.
Claim 10
Independent Claim
95 words
A method of obtaining a stable p-type epitaxial layer of ZnSe, said method comprising forming an epitaxial layer of ZnSe by chemical vapor deposition, in-situ doping said layer with a stable acceptor-type impurity at a concentration of greater than 1×10 14 per cubic centimeter, capping said doping layer with a diffusion-limiting layer and subjecting the resultant structure to a rapid thermal anneal at a temperature of 700 to 950 degrees C. for a period of from 10 seconds at a temperature of 950 degrees C. to 2 minutes at a temperature of 700 degrees C.
Claim 11
Independent Claim
95 words
A method of obtaining a stable p-type epitaxial layer of ZnSe, said method comprising forming an epitaxial layer of ZnSe by chemical vapor deposition, in-situ doping said layer with a stable acceptor-type impurity at a concentration of greater than 1×10 14 per cubic centimeter, capping said doping layer with a diffusion-limiting layer and subjecting the resultant structure to a rapid thermal anneal at a temperature of 700 to 950 degrees C. for a period of from 10 seconds at a temperature of 950 degrees C. to 2 minutes at a temperature of 700 degrees C.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein the acceptor-type impurity is N.
Claim 13
Dependent Claim
28 words
The method of claim 9 wherein the diffusion-limiting layer is formed of a material selected from the group consisting of Si 3 N 4 and SiO 2 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |