US5068204A
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Method of manufacturing a light emitting element
Assignee: Misawa Homes Co Ltd
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Filing: 1988-03-25
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Granted: 1991-11-26
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Expires: 2008-03-25
Abstract
Abstract A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements and their compounds are used as impurities to be introduced into the construction when it is at the condition of vapor growing. A blue light emitting diode has a pair of Ohmic electrodes, an n-type semiconductor layer and a p-type semiconductor layer. These layers are grown from a vapor phase on the substrate and sandwiched between the electrodes.
Inventors
- 👤 Hiroshi Kukimoto
- 👤 Iwao Mitsuishi
- 👤 Takashi Yasuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:57
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/8232; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/041; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
158 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of a group VIa element to a group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; and the introduction of the impurities of the group Ia elements includes a simultaneous doping of the Va elements with said group Ia elements so that the mobility thereof is suppressed, and vacancies of the VI host atoms produced by the group Ia elements acting as dopants are compensated by the doped Va elements, whereby to reduce point defects and improve the quality of the crystal layers for forming a crystal suitable for a light emitting diode.
Claim 2
Independent Claim
158 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of a group VIa element to a group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; and the introduction of the impurities of the group Ia elements includes a simultaneous doping of the Va elements with said group Ia elements so that the mobility thereof is suppressed, and vacancies of the VI host atoms produced by the group Ia elements acting as dopants are compensated by the doped Va elements, whereby to reduce point defects and improve the quality of the crystal layers for forming a crystal suitable for a light emitting diode.
Claim 3
Dependent Claim
54 words
The method as claimed in claim 1, wherein the group IIb elements consisting of zinc (Zn) and group VI elements consisting of selenium (Se) and sulfur (s) are used for constructing the body, and the group Ia elements consisting of lithium (Li), sodium (Na), or potassium (K) and their compounds are introduced as impurities.
Claim 4
Dependent Claim
31 words
The method as claimed in claim 1, including the step of introducing the Ia impurities of the Ia elements and their compounds for fabricating p-type ZnS x Se 1-x conductive layers.
Claim 5
Dependent Claim
47 words
The method as claimed in claim 1, including alternatively growing a p-type layer on an n-type substrate ZnS x Se 1-x and an n-type layer on a p-type substrate ZnS x Se 1-x , respectively, and wherein x is greater than zero and less than 1 (0<x<1).
Claim 6
Dependent Claim
54 words
The method as claimed in claim 1, wherein the Va elements are selected from the group consisting of nitrogen (N), phosphorous (P and arsenic (As) and the co-doping of the Ia and the Va elements form a bonding with the Ia elements to thereby suppress motion of the Ia elements and provide stable characteristics.
Claim 7
Dependent Claim
37 words
The method as claimed in claim 1, including continuously growing an n-type II-VI semiconductor layer ZnSe and a p-type semiconductor layer ZnSe on a GaAs, a Si or a GaP substrate in a molecular beam epitaxial apparatus.
Claim 8
Dependent Claim
42 words
The method as claimed in claim 1, including forming a multi-layer structure consisting of a p-type II-VI semiconductor layer on an n-type II-VI semiconductor layer grown on an n-type III-V semiconductor substrate which is formed by a continuous vapor phase epitaxial growth.
Claim 9
Dependent Claim
18 words
The method as claimed in claim 3, wherein X is greater than zero and less than 1 (0<x<1).
Claim 10
Independent Claim
112 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of a group VIa element to a group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; the II-VI compound semiconductor layer contains acceptors of a group Ia element and a group Va element; and co-doping of an element of Group IA with an element of Group Va.
Claim 11
Independent Claim
112 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of a group VIa element to a group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; the II-VI compound semiconductor layer contains acceptors of a group Ia element and a group Va element; and co-doping of an element of Group IA with an element of Group Va.
Claim 12
Dependent Claim
54 words
The method as claimed in claim 9, wherein the group IIb elements consisting of zinc (Zn) and group VI elements consisting of selenium (Se) and sulfur (S) are used for constructing the body, and the group Ia elements consisting of lithium (Li), sodium (Na), or potassium (K) and their compounds are introduced as impurities.
Claim 13
Independent Claim
167 words
A method of manufacturing a blue light emitting diode, comprising the steps of: continuously growing a II-VI compound semiconductor layers of (n) conduction and a II-VI compound semiconductor layers of (p) type conduction of low resistivity from a vapor phase on a semiconductor substrate crystal having the same lattice constant; controlling the flow ratio of the group VI elements to the group II elements within a range from 1 to 100 by using the gas phase reactants of an organometallic component for the group II elements and a hydride or alkyl compound for the group VI elements; vapor phase epitaxially growing p-type layers of ZnS x Se 1-x multiple layer structures consisting of n-type II-VI semiconductor layers having a resistivity ranging from 10 -3 to 10 3 ohm-cm by selectively changing the composition x with lattice-constant matching; doping the p-type layers of ZnS x Se 1-x with Ia elements including lithium (Li), sodium (Na) and potassium (K); and simultaneously doping the Va elements with the Ia elements.
Claim 14
Independent Claim
167 words
A method of manufacturing a blue light emitting diode, comprising the steps of: continuously growing a II-VI compound semiconductor layers of (n) conduction and a II-VI compound semiconductor layers of (p) type conduction of low resistivity from a vapor phase on a semiconductor substrate crystal having the same lattice constant; controlling the flow ratio of the group VI elements to the group II elements within a range from 1 to 100 by using the gas phase reactants of an organometallic component for the group II elements and a hydride or alkyl compound for the group VI elements; vapor phase epitaxially growing p-type layers of ZnS x Se 1-x multiple layer structures consisting of n-type II-VI semiconductor layers having a resistivity ranging from 10 -3 to 10 3 ohm-cm by selectively changing the composition x with lattice-constant matching; doping the p-type layers of ZnS x Se 1-x with Ia elements including lithium (Li), sodium (Na) and potassium (K); and simultaneously doping the Va elements with the Ia elements.
Claim 15
Dependent Claim
18 words
The method as claimed in claim 11, wherein X is greater than zero and less than 1 (0<x<1).
Claim 16
Dependent Claim
32 words
The method as claimed in claim 11, wherein x in the alloy composition in 0.08 to match the lattice constants with GaAs and GaP substrates, respectively, whereby to provide blue emitted light.
Claim 17
Dependent Claim
27 words
The method as claimed in claim 12, wherein the group VI elements are selected from group VIa and the group II elements are selected from group IIb.
Claim 18
Dependent Claim
22 words
The method as claimed in claim 11, comprising introducing impurities of group Ia elements and their compounds during the vapor phase growth.
Claim 19
Dependent Claim
26 words
The method as claimed in claim 11, wherein the group VIa elements include sulphur (S) and selenium (Se) and the group IIb elements include zinc (Zn).
Claim 20
Independent Claim
90 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of group VIa element to group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; and co-doping of the Group IA elements with Group VA elements.
Claim 21
Independent Claim
90 words
A method of manufacturing a light emitting element, comprising the steps of: vapor phase growing of a II-VI compound with semiconductor crystal layers having (p) type conduction of low resistivity on a semiconductor substrate; introducing impurities of group Ia elements and their compounds, during the growth step, under the condition that the flux ratio of group VIa element to group IIb element ranges from 1 to 100 for constructing a basic body of said II-VI compound semiconductor crystal layers; and co-doping of the Group IA elements with Group VA elements.
Claim 22
Dependent Claim
52 words
The method as claimed in claim 17, including selecting Va elements from the group consisting of nitrogen (N), phosphorous (P) and arsenic (As) and co-doping of the Ia and the Va elements to form a bonding with the Ia elements to thereby suppress motion of the Ia elements and provide stable characteristics.
Claim 23
Dependent Claim
34 words
The method as claimed in claim 18, including forming a host crystal on a semiconductor substrate on which an epitaxial layer is grown and selected from the group consisting of Si, GaAs and GaP.
Claim 24
Dependent Claim
34 words
The method as claimed in claim 18, including alternatively growing a p-type layer on a n-type substrate and on a n-type layer on a p-type and n-type substrates ZnS x Se 1-x , respectively.
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| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |