US4792832A
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Superlattice semiconductor having high carrier density
Assignee: NEC Corp
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Filing: 1987-04-24
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Granted: 1988-12-20
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Expires: 2007-04-24
Abstract
Abstract The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.
Inventors
- 👤 Toshio Baba
- 👤 Takashi Mizutani
- 👤 Masaki Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:18
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/34; H10D10/00; H10D10/80; H10D10/821; H10D10/881; H10D30/472; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/161; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1465; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/60; H01S5/343; H01S5/34313; H01S5/3432; H01S5/347; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/065; Y10S148/072; Y10S148/16
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
120 words
A superlattice type semiconductor having a multilayered structure of alternately piled first and second layers, said first layers being made of a semiconductor which does not involve aluminum, a combination of arsenic and phosphorus, a combination of arsenic and antimony and a combination of silicon and germanium as elements, each of said first layers having a thickness with a range from 5 Å to 100 Å and having an N-type impurity doped region sandwiched by impurity-free regions, said impurity-free regions contacting said second layers, said second layers being impurity-free and made of a material having an electron affinity smaller than said semiconductor and each of said second layers having a thickness within a range from 5 Å to 100 Å.
Claim 2
Dependent Claim
120 words
A superlattice type semiconductor having a multilayered structure of alternately piled first and second layers, said first layers being made of a semiconductor which does not involve aluminum, a combination of arsenic and phosphorus, a combination of arsenic and antimony and a combination of silicon and germanium as elements, each of said first layers having a thickness with a range from 5 Å to 100 Å and having an N-type impurity doped region sandwiched by impurity-free regions, said impurity-free regions contacting said second layers, said second layers being impurity-free and made of a material having an electron affinity smaller than said semiconductor and each of said second layers having a thickness within a range from 5 Å to 100 Å.
Claim 3
Dependent Claim
40 words
A superlattice type semiconductor as claimed in claim 1, wherein the combination of said semiconductor and said material is selected from a group of combination of GaAs/AlAs, GaAs/GaSb, GaAs/GaP, InAs/AlAs, GaP/AlP, InP/AlAsSb, GaAs/InGaP, GaAs/GaPSb, GaSb/InAs, InAs/AlSb, GaSb/Alsb, InP/InGaAs and InP/GaAsSb.
Claim 4
Dependent Claim
36 words
A superlattice type semiconductor as claimed in claim 1, wherein the combination of said semiconductor and said material is selected from a group of combinations of Si/Ge, Si/GaP, Ge/GaAs, Ge/AlAs, Ge/GaAlAs, Si/c and Si/CaF 2 .
Claim 5
Dependent Claim
32 words
A superlattice type semiconductor as claimed in claim 1, wherein the combination of said semiconductor and said material is elected from a group of combinations of ZnSe/ZnS, CdSe/ZnTe, CdTe/HgTe, GaAs/ZnSe and GaAs/ZnS.
Claim 6
Dependent Claim
38 words
A superlattice type semiconductor as claimed in claim 1, wherein said material is selected from a group of MgO-Al 2 O 3 spinels, BaF 2 , CaF 2 and a mixture of BaF 2 and CaF 2 .
Claim 7
Dependent Claim
38 words
A superlattice type semiconductor as claimed in claim 5, wherein the combination of said semiconductor and said material is selected from a group of combinations of Si/CaF 2 , GaP/CaF 2 , GaAs/CaF 2 and CdSe/CaF 2 .
References Cited (Backward Citations)
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