Semiconductor luminescent element and method of manufacturing the same

Claim 2

A semiconductor luminescent element comprising: a base substrate; a ZnO luminescent layer formed on the base substrate; and a ZnO buffer layer doped with an impurity and formed between the base substrate and the ZnO luminescent layer, the impurity being selected from the group consisting of Li, Cu, Ni, Y, Ag, Mn, Al, V, Fe, La, Ti, Ta, Nb and Ga and the ZnO buffer layer having a thickness of 0.3 μm or more.

Claim 3

A semiconductor luminescent element according to claim 1 , wherein the base substrate is made of a material selected from the group consisting of sapphire, quartz, silicon, glass and fused quartz.

Claim 4

A semiconductor luminescent element comprising: a base substrate; a ZnO luminescent layer formed on the base substrate; a first ZnO layer having a thickness of 0.3 μm or more doped with an impurity of a first conductivity type and formed between the base substrate and the ZnO luminescent layer, the impurity being selected from the group consisting of Li, Cu, Ni, Y, Ag, Mn, Al, V, Fe, La, Ti, Ta, Nb and Ga; and a second ZnO layer doped with an impurity of a second conductivity type and formed on the ZnO luminescent layer.

Claim 5

A semiconductor luminescent element comprising: a base substrate; a ZnO luminescent layer formed on the base substrate; a first ZnO layer having a thickness of 0.3 μm or more doped with an impurity of a first conductivity type and formed between the base substrate and the ZnO luminescent layer, the impurity being selected from the group consisting of Li, Cu, Ni, Y, Ag, Mn, Al, V, Fe, La, Ti, Ta, Nb and Ga; and a second ZnO layer doped with an impurity of a second conductivity type and formed on the ZnO luminescent layer.

Claim 6

A semiconductor luminescent element according to claim 3 , wherein the ba se substrate is made of a material selected from the group consisting of sapphire, quartz, silicon, glass and fused quartz.

Claim 7

A semiconductor luminescent element according to claim 3 , wherein the first conductivity type is n-type and the second conductivity type is p-type.

Claim 8

A semiconductor luminescent element according to claim 3 , wherein the first ZnO layer includes a first sub-layer formed on the base substrate and a second sub-layer in contact with the ZnO luminescent layer, and the second sub-layer is doped with the impurity of the first conductivity type.

Claim 9

A semiconductor luminescent element according to claim 6 , wherein the impurity of the first conductivity type is selected from one of Al and V.

Claim 10

A semiconductor luminescent element according to claim 6 , wherein the first sub-layer is doped with Ni.

Claim 11

A semiconductor luminescent element comprising: a base substrate made of a material selected from the group consisting of sapphire, quartz, silicon, glass and fused quartz; a ZnO luminescent layer which emits light in a range from blue to ultraviolet; and a ZnO buffer layer having a thickness of 0.3 μm or more provided between the base substrate and the ZnO luminescent layer and including a first sub-layer and a second sub-layer, the first sublayer being formed on the base substrate and doped with an impurity selected from the group consisting of Li, Cu, Ni, Y, Ag, Mn, Fe, La, Ti, Ta, Nb and Ga, the second sub-layer being in contact with the ZnO luminescent layer and doped with an impurity selected from one of Al and V.

Claim 12

A semiconductor luminescent element comprising: a base substrate made of a material selected from the group consisting of sapphire, quartz, silicon, glass and fused quartz; a ZnO luminescent layer which emits light in a range from blue to ultraviolet; and a ZnO buffer layer having a thickness of 0.3 μm or more provided between the base substrate and the ZnO luminescent layer and including a first sub-layer and a second sub-layer, the first sublayer being formed on the base substrate and doped with an impurity selected from the group consisting of Li, Cu, Ni, Y, Ag, Mn, Fe, La, Ti, Ta, Nb and Ga, the second sub-layer being in contact with the ZnO luminescent layer and doped with an impurity selected from one of Al and V.