EP0541373A2
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EP
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Method of manufacturing p-type compound semiconductor
Assignee: Nichia Corp
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Filing: 1992-11-05
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Granted: —
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Expires: 2012-11-05
Abstract
Abstract A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400°C or higher, or electron beam irradiating the grown compound at 600°C or higher.
Inventors
- 👤 Shuji c/o Nichia Chemical Ind. Ltd. Nakamura
- 👤 Naruhito c/o Nichia Chemical Ind. Ltd. Iwasa
- 👤 Masayuki c/o Nichia Chemical Ind. Ltd. Senoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 20:25
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/013; H10H20/0133; H10H20/01335; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/004; Y10S148/064; Y10S438/00; Y10S438/902; Y10S438/909
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
52 words
A method of manufacturing a p-type III-V Group compound semiconductor element by a vapor phase epitaxy method comprising the step of growing a III-V Group compound by introducing a reaction gas containing a p-type impurity on a substrate, characterized in that said compound is annealed at a temperature of 400°C or higher.
Claim 2
Dependent Claim
29 words
A method according to claim 1, characterized in that said III-V Group compound is represented by general formula Ga x Aℓ 1-x N (where 0 ≦ x ≦ 1).
Claim 3
Dependent Claim
20 words
A method according to claim 1, characterized in that a temperature of said annealing is in the range of 600°C-1200°C.
Claim 4
Dependent Claim
21 words
A method according to claim 1, characterized in that a cap layer is provided on said III-V Group compound before annealing.
Claim 5
Dependent Claim
51 words
A method according to claim 4, characterized in that said cap layer is made of at least one material selected from the group consisting of Ga x Aℓ 1-x N (where 0 ≦ x ≦ 1), In y G 1-y N (where 0 ≦ y ≦ 1), AℓN, Si₃N, and SiO₂.
Claim 6
Dependent Claim
37 words
A method according to claim 1, characterized in that said annealing is carried out in a nitrogen atmosphere pressurized to a point of a decomposition pressure of the III-V Group compound at said annealing temperature, or higher.
Claim 7
Dependent Claim
26 words
A method according to claim 1, characterized by further comprising the step of forming a buffer layer on the substrate before growing said III-V Group compound.
Claim 8
Dependent Claim
16 words
A method according to claim 1, characterized in that said buffer layer is made of GaN.
Claim 9
Dependent Claim
74 words
A method according to claim 1, characterized in that said reaction gas contains at least one of a gallium source selected from the group consisting of trimethyl gallium, trimethyl aluminum and diethyl gallium, and an aluminum source selected from the group consisting of trimethyl aluminum and diethyl aluminum, an indium source selected from the group consisting of trimethyl indium and diethyl indium, and a nitrogen source selected from the group consisting of ammonia, hydrazin.
Claim 10
Dependent Claim
29 words
A method according to claim 1, characterized in that said substrate is made of at least one material selected from the group consisting of sapphire, SiC, GaAs, and Si.
Claim 11
Dependent Claim
28 words
A method according to claim 1, characterized in that said p-type impurity is at least one selected the group consisting of Zn, Cd, Be, Mg, Ca, and Ba.
Claim 12
Independent Claim
59 words
A method of manufacturing a p-type III-V Group compound semiconductor element by a chemical vapor deposition method comprising the step of growing a III-V Group compound by introducing a reaction gas containing a p-type impurity on a substrate, characterized in that electron beams are irradiated on said compound while maintaining a temperature of said compound at 600°C or higher.
Claim 13
Dependent Claim
29 words
A method according to claim 12, characterized in that an acceleration voltage is controlled within a range of 1 kV - 30 kV in said electron beam irradiation step.
Claim 14
Dependent Claim
23 words
A method according to claim 12, characterized in that a temperature of said III-V Group compound is maintained in the range of 600°C-1200°C.
Claim 15
Dependent Claim
29 words
A method according to claim 12, characterized in that said III-V Group compound is represented by general formula Ga x Aℓ 1-x N (where 0 ≦ x ≦ 1).
Claim 16
Independent Claim
52 words
A method of manufacturing a p-type II-VI Group compound semiconductor element by a chemical vapor deposition method comprising the step of growing a II-VI Group compound by introducing a reaction gas containing a p-type impurity on a substrate, characterized in that said compound is annealed at a temperature of 300°C or higher.
Claim 17
Dependent Claim
20 words
A method according to claim 16, characterized in that a temperature of said annealing is in the range of 400°C-1200°C.
Claim 18
Dependent Claim
51 words
A method according to claim 16, characterized in that said annealing is carried out in an atmosphere of one of a II group gas, a VI group gas, and a mixture thereof, pressurized to a point or higher of a decomposition pressure of the II-VI group compound at said annealing temperature.
Claim 19
Dependent Claim
22 words
A method according to claim 16, characterized by further comprising the step of forming a cap layer on said compound before annealing.
Claim 20
Dependent Claim
32 words
A method according to claim 19, characterized in that said cap layer is made of at least one material selected from the group consisting of a II-VI compound semiconductor, Si₃N₄, and SiO₂.
Claim 21
Dependent Claim
29 words
A method according to claim 16, characterized in that said substrate is made of at least one material selected from the group consisting of GaAs, ZnSe, GaP, and InP.
Claim 22
Dependent Claim
50 words
A method according to claim 16, characterized in that said reaction gas contains at least one of a II group element source selected from the group consisting of diethyl zinc, diethyl cadomium, and diethy magnesium, and a VI group source selected from the group consisting of hydrogen selenide, hydrogen sulphide.
Claim 23
Dependent Claim
25 words
A method according to claim 16, characterized in that said p-type impurity is at least one selected the group consisting of N, Li, and O.
Claim 24
Independent Claim
57 words
A method of manufacturing a II-VI Group compound semiconductor element by a vapor phase epitaxy method comprising the step of growing a II-VI compound by introducing a reaction gas containing a p-type impurity on a substrate, characterized in that electron beams are irradiated on said compound while maintaining a temperature of said compound at 300°C or higher.
Claim 25
Dependent Claim
27 words
A method according to claim 24, characterized in that a temperature of said compound is maintained in the range of 300°C-1200°C, in said electron beam irradiating step.
References Cited (Backward Citations)
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