US6259016B1
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Solar cell
Assignee: Panasonic Holdings Corp
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Filing: 2000-02-29
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Granted: 2001-07-10
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Expires: 2020-02-29
Abstract
Abstract The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy a relationship: Eg1>Eg2. The electron affinity χ1 (eV) of the first semiconductor layer and an electron affinity χ2 (eV) of the second semiconductor layer satisfy a relationship: 0<=(χ2-χ1)<0.5.
Inventors
- 👤 Takayuki Negami
- 👤 Yasuhiro Hashimoto
- 👤 Shigeo Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:22
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
107 words
A solar cell comprising a first semiconductor layer that is n-type and a second semiconductor layer that is p-type, the first and second semiconductor layers forming a pn junction, wherein the first semiconductor layer is free from Cd, the second semiconductor layer is a light-absorption layer, a band gap Eg 1 of the first semiconductor layer and a band gap Eg 2 of the second semiconductor layer satisfy a relationship: Eg 1 >Eg 2 , and an electron affinity χ 1 (eV) of the first semiconductor layer and an electron affinity χ 2 (eV) of the second semiconductor layer satisfy a relationship: 0<(χ 2 −χ 1 )<0.5.
Claim 2
Dependent Claim
107 words
A solar cell comprising a first semiconductor layer that is n-type and a second semiconductor layer that is p-type, the first and second semiconductor layers forming a pn junction, wherein the first semiconductor layer is free from Cd, the second semiconductor layer is a light-absorption layer, a band gap Eg 1 of the first semiconductor layer and a band gap Eg 2 of the second semiconductor layer satisfy a relationship: Eg 1 >Eg 2 , and an electron affinity χ 1 (eV) of the first semiconductor layer and an electron affinity χ 2 (eV) of the second semiconductor layer satisfy a relationship: 0<(χ 2 −χ 1 )<0.5.
Claim 3
Dependent Claim
29 words
The solar cell according to claim 1 , wherein the first semiconductor layer is formed closer to a side from which light is incident than the second semiconductor layer.
Claim 4
Dependent Claim
48 words
The solar cell according to claim 1 , further comprising a third semiconductor layer between the first semiconductor layer and the second semiconductor layer, wherein a band gap Eg 3 of the third semiconductor layer and the band gap Eg 2 satisfy a relationship: Eg 3 >Eg 2.
Claim 5
Dependent Claim
32 words
The solar cell according to claim 3 , wherein the third semiconductor layer is made of a semiconductor selected from the group consisting of an n-type semiconductor and a highly resistive semiconductor.
Claim 6
Dependent Claim
48 words
The solar cell according to claim 3 , wherein an electron affinity χ 3 (eV) of the third semiconductor layer and the electron affinity χ 2 satisfy a relationship: (χ 2 −χ 3 )≧0.5, and a thickness of the third semiconductor layer is not more than 50 nm.
Claim 7
Dependent Claim
41 words
The solar cell according to claim 5 , wherein the third semiconductor layer comprises an oxide comprising Zn and at least one element selected from group IIIb, or a chalcogenide comprising Zn and at least one element selected from group IIIb.
Claim 8
Dependent Claim
47 words
The solar cell according to claim 1 , further comprising an insulating layer between the first semiconductor layer and the second semiconductor layer, wherein a band gap Eg INS of the insulating layer and the band gap Eg 2 satisfy a relationship Eg INS >Eg 2 .
Claim 9
Dependent Claim
46 words
The solar cell according to claim 7 , wherein an electron affinity χ INS (eV) of the insulating layer and the electron affinity χ 2 satisfy a relationship: (χ 2 −χ INS )≧0.5, and a thickness of the insulating layer is not more than 50 nm.
Claim 10
Dependent Claim
43 words
The solar cell according to claim 8 , wherein the insulating layer is made of at least one insulator selected from Al 2 O 3 , Ga 2 O 3 , Si 3 N 4 , SiO 2 , MgF 2 and MgO.
Claim 11
Dependent Claim
37 words
The solar cell according to claim 1 , wherein the second semiconductor layer further comprises an n-type semiconductor layer or a highly resistive semiconductor layer on a surface thereof on a side of the first semiconductor layer.
Claim 12
Dependent Claim
31 words
The solar cell according to claim 1 , wherein the second semiconductor layer is a compound semiconductor layer comprising at least one element from each of groups Ib, IIIb, and VIb.
Claim 13
Dependent Claim
20 words
The solar cell according to claim 1 , wherein the first semiconductor layer is made of a compound comprising Zn.
Claim 14
Dependent Claim
39 words
The solar cell according to claim 12 , wherein the compound is an oxide comprising Zn and at least one element selected from group IIa, or a chalcogenide comprising Zn and at least one element selected from group IIa.
Claim 15
Dependent Claim
45 words
The solar cell according to claim 12 , wherein the compound comprises an oxide expressed by a general formula Zn 1−x A x O where element A is at least one selected from Be, Mg, Ca, Sr and Ba, and 0<X<1 as a main component.
Claim 16
Dependent Claim
21 words
The solar cell according to claim 14 , wherein the element A is Mg, and the X satisfies a relationship: 0<X<0.5.
Claim 17
Dependent Claim
39 words
The solar cell according to claim 12 , wherein the compound is an oxide comprising Zn and at least one element selected from group IIIb or a chalcogenide comprising Zn and at least one element selected from group IIIb.
Claim 18
Dependent Claim
44 words
The solar cell according to claim 12 , wherein the compound comprises an oxide expressed by a general formula Zn Y B 2−2Y O 3−2Y where element B is at least one selected from Al, Ga and In, and 0<Y<1 as a main component.
Claim 19
Dependent Claim
55 words
A solar cell comprising a p-type light-absorption layer an n-type semiconductor layer stacked over the light-absorption layer, wherein the semiconductor layer comprises an oxide expressed by a general formula Zn 1−z C z O where element C is at least one selected from Be, Mg, Ca, Sr and Ba, and 0<Z<1 as a main component.
Claim 20
Dependent Claim
55 words
A solar cell comprising a p-type light-absorption layer an n-type semiconductor layer stacked over the light-absorption layer, wherein the semiconductor layer comprises an oxide expressed by a general formula Zn 1−z C z O where element C is at least one selected from Be, Mg, Ca, Sr and Ba, and 0<Z<1 as a main component.
Claim 21
Dependent Claim
21 words
The solar cell according to claim 18 , wherein the element C is Mg, and the Z satisfies a relationship: 0<Z<0.5.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-07-09 | 2005-01-08 | 2005-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-09 | 2009-01-08 | 2009-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-09 | 2013-01-08 | 2013-07-10 | $7700.00 | Window Closed / Lapsed |