US4612411A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film solar cell with ZnO window layer
Assignee: Atlantic Richfield Co
•
Filing: 1985-06-04
•
Granted: 1986-09-16
•
Expires: 2005-06-04
Abstract
Abstract A thin film photovoltaic device comprising a first layer of copper indium diselenide p-type semiconductor and a second layer of n-type zinc oxide semiconductor. In a preferred form, the first portion of the zinc oxide film at the junction with the CIS is undoped to have relatively high resistivity, while the remaining portion thereof is doped to achieve low resistivity. The zinc oxide is preferably deposited by a low temperature chemical vapor deposition process.
Inventors
- 👤 Robert D. Wieting
- 👤 Richard R. Potter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:18
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F71/00; H10F71/125; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/543; Y02E10/549
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
47 words
A thin film photovoltaic device comprising, in order, a first layer of copper indium diselenide semiconductor, a second layer of high resistivity zinc oxide semiconductor in contact with said first layer, and a third layer of low resistivity zinc oxide semiconductor in contact with said second layer.
Claim 2
Dependent Claim
47 words
A thin film photovoltaic device comprising, in order, a first layer of copper indium diselenide semiconductor, a second layer of high resistivity zinc oxide semiconductor in contact with said first layer, and a third layer of low resistivity zinc oxide semiconductor in contact with said second layer.
Claim 3
Dependent Claim
42 words
A device according to claim 1 wherein the third layer is deposited by a chemical vapor deposition process and low resistivity is achieved by inclusion of B 2 H 6 in the reactive gas mixture used to deposit the zinc oxide semiconductor.
Claim 4
Dependent Claim
20 words
A device according to claim 1 wherein said second layer is produced by a low temperature chemical vapor deposition process.
Claim 5
Dependent Claim
54 words
A device according to claim 3 wherein said process includes the steps of maintaining a substrate supporting said first layer at a temperature of from 60° C. to 350° C. while flowing reactant gases including water vapor and an organozinc compound at a pressure of from 0.1 to 2 torr across said first layer.
Claim 6
Dependent Claim
31 words
A device according to claim 4 wherein during said deposition process said substrate temperature is maintained at about 150° C. and said reactant gas pressure is maintained at about 0.86 torr.
Claim 7
Dependent Claim
13 words
A device according to claim 4 wherein said organozinc compound is diethyl zinc.
Claim 8
Dependent Claim
43 words
A thin film photovoltaic device having a first layer of copper indium diselenide forming a junction with a second layer comprising primarily zinc oxide wherein said zinc oxide layer is deposited on said first layer by a low temperature chemical vapor deposition process.
Claim 9
Dependent Claim
43 words
A thin film photovoltaic device having a first layer of copper indium diselenide forming a junction with a second layer comprising primarily zinc oxide wherein said zinc oxide layer is deposited on said first layer by a low temperature chemical vapor deposition process.
Claim 10
Dependent Claim
55 words
A device according to claim 7 wherein said process includes the steps of maintaining a substrate supporting said first layer at a temperature of from 60° C. to 350° C. while flowing reactant gases including water vapor and an organozinc compound at a pressure of from 0.1 torr to 2 torr across said first layer.
Claim 11
Dependent Claim
31 words
A device according to claim 8 wherein during said deposition process said substrate temperature is maintained at about 150° C. and said reactant gas pressure is maintained at about 0.86 torr.
Claim 12
Dependent Claim
13 words
A device according to claim 8 wherein said organozinc compound is diethyl zinc.
Claim 13
Dependent Claim
41 words
A device according to claim 8 wherein the portion of said zinc oxide layer remote from said junction has low resistivity achieved by inclusion of B 2 H 6 in the reactive gas mixture used to deposit the zinc oxide layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-15 | 1990-03-17 | 1990-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-15 | 1994-03-17 | 1994-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-15 | 1998-03-17 | 1998-09-16 | $7700.00 | Window Closed / Lapsed |