Thin film solar cell

Abstract

Abstract Translated from Japanese (57)【要約】 【課題】本来の光吸収層１と中間層２での光電変換に加 えて、窓層３と透明電極層４での光電変換が加わり、中 間層２と窓層３の間にはｋＴを越える電位障壁がないた め、光吸収層１と中間層２での光電変換は影響を受けな い構成とすることにより、窓層の電子親和力、仕事関 数、バンドギャップ等の電気的特性を最適化し、高効率 の薄膜太陽電池を提供する。 【解決手段】電極層を設けた基板または電極性を備えた 金属基板上に、ｐ型の半導体の光吸収層１、ｎ型の半導 体の中間層２、半導体の窓層３、ｎ型の透明電極層４を 順次積層する。または透明性基板上に、透明電極層４、 半導体の窓層３、ｎ型の半導体の中間層２、ｐ型の半導 体の窓層１を順次積層する。本来の光吸収層１と中間層 ２での光電変換に加えて、窓層３と透明電極層４での光 電変換が加わり、特性の向上が図れる。 (57) Abstract: In addition to the original photoelectric conversion in the light absorption layer 1 and the intermediate layer 2, photoelectric conversion in the window layer 3 and the transparent electrode layer 4 is added, so that the intermediate layer 2 and the window layer 3 are converted. Since there is no potential barrier exceeding kT between them, the photoelectric conversion in the light absorption layer 1 and the intermediate layer 2 is not affected, so that the electron affinity, work function, band gap, etc. Provide a thin film solar cell with optimized characteristics and high efficiency. A light absorbing layer 1 of p-type semiconductor, an intermediate layer 2 of n-type semiconductor, a window layer 3 of semiconductor, and n-type transparent are provided on a substrate provided with an electrode layer or a metal substrate having an electrode property. The electrode layers 4 are sequentially laminated. Alternatively, the transparent electrode layer 4, on the transparent substrate, A semiconductor window layer 3, an n-type semiconductor intermediate layer 2, and a p-type semiconductor window layer 1 are sequentially stacked. In addition to the original photoelectric conversion in the light absorption layer 1 and the intermediate layer 2, photoelectric conversion in the window layer 3 and the transparent electrode layer 4 is added to improve the characteristics.

Inventors

• 👤 Masaharu Terauchi
• 👤 正治 寺内
• 👤 Takahiro Wada
• 👤 隆博 和田

Bibliographic Details