US5976958A
Expired / Lapsed
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Method for growth of in situ p-type semiconductor films using a group V flux
Assignee: The AT&T MVPD Group LLC
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Filing: 1997-11-06
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Granted: 1999-11-02
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Expires: 2017-11-06
Abstract
Abstract A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.
Inventors
- 👤 Rajesh D. Rajavel
- 👤 Owen K. Wu
- 👤 Peter D. Brewer
- 👤 Terence J. deLyon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:09
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2913; H10P14/2917; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3444
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
89 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating a first Group V flux by evaporating a solid Group V source material; (c) decomposing the first Group V flux to generate a second Group V flux, wherein step (c) comprises the step of utilizing a thermal cracker cell having a plurality of baffles; and (d) providing the second Group V flux to the lattice during step (a).
Claim 2
Independent Claim
89 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating a first Group V flux by evaporating a solid Group V source material; (c) decomposing the first Group V flux to generate a second Group V flux, wherein step (c) comprises the step of utilizing a thermal cracker cell having a plurality of baffles; and (d) providing the second Group V flux to the lattice during step (a).
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein step (a) comprises: generating a Group II flux by evaporation; and generating a Group VI flux by evaporation.
Claim 4
Dependent Claim
27 words
The method of claim 1, wherein step (b) comprises evaporating elemental arsenic and wherein the Group II material is mercury and the Group VI material is tellurium.
Claim 5
Dependent Claim
26 words
The method of claim 3, further comprising the steps of: generating a cadmium telluride flux by evaporation; and providing the cadmium telluride flux to the lattice.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein step (a) occurs at a temperature in a range from about 150° C. to about 330° C.
Claim 7
Dependent Claim
27 words
The method of claim 1, wherein the first Group V flux consists essentially of tetrameric arsenic and the second Group V flux consists essentially of dimeric arsenic.
Claim 8
Dependent Claim
27 words
The method of claim 1, further comprising the step of annealing the lattice at a temperature in a range from about 250° C. to about 300° C.
Claim 9
Independent Claim
69 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising cadmium, a Group II material having mercury, and a Group VI material having tellurium; (b) generating a first elemental arsenic flux; (c) generating a second elemental arsenic flux by decomposing the first elemental arsenic flux; and (d) providing the second elemental arsenic flux to the lattice during step (a).
Claim 10
Independent Claim
69 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising cadmium, a Group II material having mercury, and a Group VI material having tellurium; (b) generating a first elemental arsenic flux; (c) generating a second elemental arsenic flux by decomposing the first elemental arsenic flux; and (d) providing the second elemental arsenic flux to the lattice during step (a).
Claim 11
Dependent Claim
15 words
The method of claim 8, wherein the first elemental flux consists essentially of tetrameric arsenic.
Claim 12
Dependent Claim
15 words
The method of claim 9, wherein the second elemental flux consists essentially of dimeric arsenic.
Claim 13
Dependent Claim
35 words
The method of claim 8, wherein step (c) comprises: heating a set of baffles to a temperature from about 400° C. to about 1000° C.; and applying the first elemental arsenic flux to the baffles.
Claim 14
Dependent Claim
23 words
The method of claim 8, wherein step (a) occurs at a temperature in a range from about 160° C. to about 220° C.
Claim 15
Dependent Claim
27 words
The method of claim 8, further comprising the step of annealing the lattice at a temperature in a range from about 250° C. to about 300° C.
Claim 16
Independent Claim
117 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating an elemental Group V flux comprising at least one of a dimeric Group V flux and a monomeric Group V flux by imparting energy on a solid source of elemental Group V material, wherein step (b) comprises the steps of evaporating the solid source of elemental Group V material to form a Group V tetramer flux and decomposing the Group V tetramer flux in a cracker cell having a plurality of baffles; and (c) providing the elemental Group V flux to the lattice during step (a).
Claim 17
Independent Claim
117 words
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating an elemental Group V flux comprising at least one of a dimeric Group V flux and a monomeric Group V flux by imparting energy on a solid source of elemental Group V material, wherein step (b) comprises the steps of evaporating the solid source of elemental Group V material to form a Group V tetramer flux and decomposing the Group V tetramer flux in a cracker cell having a plurality of baffles; and (c) providing the elemental Group V flux to the lattice during step (a).
Claim 18
Dependent Claim
12 words
The method of claim 14, wherein the Group V material is arsenic.
Claim 19
Dependent Claim
27 words
The method of claim 14, further comprising the step of annealing the lattice at a temperature in a range from about 250° C. to about 300° C.
Claim 20
Independent Claim
128 words
A method of growing a p-type doped, Group II-VI semiconductor film for a narrow bandgap semiconductor, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating a first Group V flux by evaporating a solid Group V source material, the first Group V flux substantially comprising tetramers; (c) decomposing the first Group V flux to generate a second Group V flux, wherein the second Group V flux substantially comprises dimers that are characterized by a sticking coefficient as much as about 5000 times higher than a sticking coefficient associated with the tetramers; (d) providing the second Group V flux to the forming lattice; and (e) annealing the lattice at a temperature that is less than about 450° C.
Claim 21
Independent Claim
128 words
A method of growing a p-type doped, Group II-VI semiconductor film for a narrow bandgap semiconductor, comprising the steps of: (a) forming a lattice comprising a Group II material and a Group VI material; (b) generating a first Group V flux by evaporating a solid Group V source material, the first Group V flux substantially comprising tetramers; (c) decomposing the first Group V flux to generate a second Group V flux, wherein the second Group V flux substantially comprises dimers that are characterized by a sticking coefficient as much as about 5000 times higher than a sticking coefficient associated with the tetramers; (d) providing the second Group V flux to the forming lattice; and (e) annealing the lattice at a temperature that is less than about 450° C.
Claim 22
Dependent Claim
10 words
The method of claim 17 wherein said semiconductor comprises Hg.
Claim 23
Dependent Claim
11 words
The method of claim 18, wherein said semiconductor further comprises HgCdTe.
References Cited (Backward Citations)
No citation records indexed.
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