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US6584609B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method and apparatus for mixed-mode optical proximity correction

Assignee: Synopsys Inc
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Filing: 2000-02-28
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Granted: 2003-06-24
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Expires: 2020-02-28
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Abstract

Abstract A semiconductor layout testing and correction system is disclosed. The system combines both rule-based optical proximity correction and model-based optical proximity correction in order to test and correct semiconductor layouts. In a first embodiment, a semiconductor layout is first processed by a rule-based optical proximity correction system and then subsequently processed by a model-based optical proximity correction system. In another embodiment, the system first processes a semiconductor layout with a rule-based optical proximity correction system and then selectively processes difficult features using a model-based optical proximity correction system. In yet another embodiment, the system selectively processes the various features of a semiconductor layout using a rule-based optical proximity correction system or a model-based optical proximity correction system.

Inventors

  • 👤 Christophe Pierrat
  • 👤 You-Ping Zhang
  • 👤 Fang-Cheng Chang
  • 👤 Hoyong Park
  • 👤 Yao-Ting Wang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 20:57
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/70; G03F1/36; G06; G06F; G06F30/00; G06F30/30; G06F30/39

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 96 words
A method of preparing a semiconductor mask, said method comprising: accepting a semiconductor design; processing each feature to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 2
Independent Claim 96 words
A method of preparing a semiconductor mask, said method comprising: accepting a semiconductor design; processing each feature to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 3
Dependent Claim 29 words
The method as claimed in claim 1 wherein the model-based optical proximity correction system handles two or more mask fabrication effects, optical effects, resist processing effects, and etching effects.
Claim 4
Dependent Claim 29 words
The method as claimed in claim 1 wherein said features to be corrected with said model-based optical proximity system are pre-biased before correcting with said model-based optical proximity system.
Claim 5
Dependent Claim 24 words
The method as claimed in claim 1 wherein selectively correcting features with a model-based optical proximity correction comprises verifying said semiconductor design against specifications.
Claim 6
Dependent Claim 18 words
The method as claimed in claim 4 wherein a user may select a dose setting for said verifying.
Claim 7
Dependent Claim 18 words
The method as claimed in claim 4 wherein a user may select a focus setting for said verifying.
Claim 8
Dependent Claim 13 words
The method as claimed in claim 1 wherein a feature comprises a segment.
Claim 9
Independent Claim 107 words
A method of preparing a semiconductor mask, said method comprising: accepting a semiconductor design; processing each feature to determine if a ruled-based optical proximity correction system, if a model-based optical proximity correction system, if both rule-based and model-based optical proximity correction systems, or if no correction system should be used for a particular feature, wherein at least one feature comprises a shape; determining an optimal model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with a selected correction system determined in said step of processing; and outputting a final corrected semiconductor design.
Claim 10
Independent Claim 107 words
A method of preparing a semiconductor mask, said method comprising: accepting a semiconductor design; processing each feature to determine if a ruled-based optical proximity correction system, if a model-based optical proximity correction system, if both rule-based and model-based optical proximity correction systems, or if no correction system should be used for a particular feature, wherein at least one feature comprises a shape; determining an optimal model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with a selected correction system determined in said step of processing; and outputting a final corrected semiconductor design.
Claim 11
Dependent Claim 29 words
The method as claimed in claim 8 wherein the model-based optical proximity correction system handles two or more mask fabrication effects, optical effects, resist processing effects, and etching effects.
Claim 12
Dependent Claim 31 words
The method as claimed in claim 8 wherein said features to be corrected with said model-based optical proximity correction system are pre-biased before correcting with said model-based optical proximity correction system.
Claim 13
Dependent Claim 24 words
The method as claimed in claim 8 wherein selectively correcting features with a model-based optical proximity correction comprises verifying said semiconductor design against specifications.
Claim 14
Dependent Claim 13 words
The method as claimed in claim 10 wherein a feature comprises a segment.
Claim 15
Dependent Claim 99 words
A semiconductor device, said semiconductor device created from a processed layout generated by: processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 16
Dependent Claim 99 words
A semiconductor device, said semiconductor device created from a processed layout generated by: processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 17
Dependent Claim 98 words
A computer readable medium, said computer readable medium containing computer instructions for: processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 18
Dependent Claim 98 words
A computer readable medium, said computer readable medium containing computer instructions for: processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and outputting a final corrected semiconductor design.
Claim 19
Dependent Claim 116 words
A computer data signal embodied in an electromagnetic waveform comprising: a source code segment for processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; a source code segment for selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; a source code segment for selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and a source code segment for outputting a final corrected semiconductor design.
Claim 20
Dependent Claim 116 words
A computer data signal embodied in an electromagnetic waveform comprising: a source code segment for processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape; a source code segment for selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system; a source code segment for selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system; and a source code segment for outputting a final corrected semiconductor design.
Claim 21
Dependent Claim 111 words
A computer apparatus, said computer apparatus comprising: a processor for processing computer instructions; and a memory, said memory containing a set of computer instructions for processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape, selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system, selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system, and outputting a final corrected semiconductor design.
Claim 22
Dependent Claim 111 words
A computer apparatus, said computer apparatus comprising: a processor for processing computer instructions; and a memory, said memory containing a set of computer instructions for processing each feature in an input layout to determine if a ruled-based optical proximity correction system or a model-based optical proximity correction system should be used for a particular feature, wherein at least one feature comprises a shape, selecting a particular model from a set of models for correcting each feature to be corrected with said model-based optical proximity correction system, selectively correcting each feature with said ruled-based optical proximity correction system or said model-based optical proximity correction system, and outputting a final corrected semiconductor design.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-06-23 2006-12-23 2007-06-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-06-23 2010-12-23 2011-06-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-06-23 2014-12-23 2015-06-24 $7700.00 Window Closed / Lapsed

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