US6559014B1
Expired / Lapsed
US
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Preparation of composite high-K / standard-K dielectrics for semiconductor devices
Assignee: GlobalFoundries US Inc
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Filing: 2001-10-15
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Granted: 2003-05-06
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Expires: 2021-10-15
Abstract
Abstract A semiconductor device and a method of making the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K. dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer.
Inventors
- 👤 Joong Jeon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D64/01342
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
117 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer is amorphous.
Claim 2
Independent Claim
117 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer is amorphous.
Claim 3
Dependent Claim
26 words
The method of claim 1 , wherein the standard-K dielectric material comprises at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride.
Claim 4
Dependent Claim
32 words
The method of claim 2 , wherein during the step of a annealing, the first dielectric material and the second dielectric material form a silicon-containing reaction product in the composite dielectric layer.
Claim 5
Dependent Claim
14 words
The method of claim 2 , wherein the composite dielectric layer comprises a silicate.
Claim 6
Dependent Claim
29 words
The method of claim 3 , wherein the reaction product comprises a metal atom, a silicon atom and at least one of an oxygen atom or a nitrogen atom.
Claim 7
Dependent Claim
85 words
The method of claim 1 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1−x Sr x O 3 ), BST (Ba 1−x Sr x TiO 3 ), PZN (PbZn x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ).
Claim 8
Dependent Claim
16 words
The method of claim 1 , wherein the first dielectric material is the high-K dielectric material.
Claim 9
Dependent Claim
16 words
The method of claim 1 , wherein the second dielectric material is the high-K dielectric material.
Claim 10
Dependent Claim
47 words
The method of claim 1 , wherein the composite dielectric layer comprises at least a portion of the sub-layers of the first dielectric material and the second dielectric material, separated by a sub-layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 11
Dependent Claim
30 words
The method of claim 1 , wherein the composite dielectric layer comprises a substantially uniform layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 12
Dependent Claim
27 words
The method of claim 1 , wherein thicknesses of the sub-layers are selected to control ratios of metal to silicon to oxygen in the composite dielectric layer.
Claim 13
Independent Claim
19 words
The method of clam 1 , wherein the layered dielectric structure comprises from about 3 to about 10 sub-layers.
Claim 14
Independent Claim
19 words
The method of clam 1 , wherein the layered dielectric structure comprises from about 3 to about 10 sub-layers.
Claim 15
Independent Claim
158 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer comprises at least a portion of the sub-layers of the first dielectric material and the second dielectric material, separated by a sub-layer of a reaction product of the first dielectric material and the second dielectric material, wherein the composite dielectric layer is amorphous.
Claim 16
Independent Claim
158 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer comprises at least a portion of the sub-layers of the first dielectric material and the second dielectric material, separated by a sub-layer of a reaction product of the first dielectric material and the second dielectric material, wherein the composite dielectric layer is amorphous.
Claim 17
Dependent Claim
26 words
The method of claim 13 , wherein the standard-K dielectric material comprises at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride.
Claim 18
Dependent Claim
84 words
The method of claim 13 , wherein the high-K dielectric material comprises at least one of haffium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ),barium strontium oxide (Ba 1−x Sr x O 3 ), BST (Ba 1−x Sr x TiO 3 ), PZN (PbZn x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ).
Claim 19
Dependent Claim
19 words
The method of claim 13 , wherein the layered dielectric structure comprises from about 3 to about 10 sub-layers.
Claim 20
Independent Claim
141 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer comprises a substantially uniform layer of a reaction product of the first dielectric material and the second dielectric material, wherein the composite dielectric layer is amorphous.
Claim 21
Independent Claim
141 words
A method of making a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer, wherein the composite dielectric layer comprises a substantially uniform layer of a reaction product of the first dielectric material and the second dielectric material, wherein the composite dielectric layer is amorphous.
Claim 22
Dependent Claim
26 words
The method of claim 17 , wherein the standard-K dielectric material comprises at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride.
Claim 23
Dependent Claim
85 words
The method of claim 17 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1−x Sr x O 3 ), BST (Ba 1−x Sr x TiO 3) , PZN (PbZn x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ).
Claim 24
Dependent Claim
19 words
The method of claim 17 , wherein the layered dielectric structure comprises from about 3 to about 10 sub-layers.
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