Patent US6514884B2 successfully refreshed from Google Patents.
US6514884B2
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Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
Assignee: Semiconductor Process Laboratory Co Ltd
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Filing: 1998-05-13
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Granted: 2003-02-04
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Expires: 2018-05-13
Abstract
Abstract The present invention relates to a method for reforming a surface of a base layer before thin film deposition, wherein a base thermal SiO2 film is exposed to a gas selected from the group consisting of AX4, AHnCl4-n and ARnX4-n, wherein A represents Si, Ge or Sn, X represents I, Br, F or Cl and R represents CmH2m+1, wherein "n" is 1, 2 or 3 and "m" is a natural number.
Inventors
- 👤 Kazuo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/02; C23C16/0209; C23C16/0218; C23C16/0227; C23C16/0236; C23C16/455; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6512; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P72/00; H10P72/04; H10P72/0402; C23C16/46; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
115 words
A method for forming film on a base layer for a semiconductor device comprising: (a) reforming a surface of the base layer by contacting the surface with a reforming gas containing an inorganic silicon halogen compound to halogenate the surface and to produce an exposed halogenated surface of the base layer at which halogen is bonded to Si; (b) after said contacting of the surface with the reforming gas, contacting the exposed halogenated surface with a film-forming gas different from the reforming gas, said film-forming gas containing tetraethylorthosilicate and O 3 ; and (c) forming a film on said halogenated surface by chemical vapor deposition with reaction of the tetraethylorthosilicate with the O 3 .
Claim 2
Independent Claim
115 words
A method for forming film on a base layer for a semiconductor device comprising: (a) reforming a surface of the base layer by contacting the surface with a reforming gas containing an inorganic silicon halogen compound to halogenate the surface and to produce an exposed halogenated surface of the base layer at which halogen is bonded to Si; (b) after said contacting of the surface with the reforming gas, contacting the exposed halogenated surface with a film-forming gas different from the reforming gas, said film-forming gas containing tetraethylorthosilicate and O 3 ; and (c) forming a film on said halogenated surface by chemical vapor deposition with reaction of the tetraethylorthosilicate with the O 3 .
Claim 3
Dependent Claim
43 words
A method according to claim 1 , wherein said inorganic silicon halogen compound is selected from the group consisting of SiCl 4 , SiI 4 , SiBr 4 , SiF 4 , SiHCl 3 , SiH 2 Cl 2 and SiH 3 Cl.
Claim 4
Dependent Claim
15 words
A method according to claim 1 , wherein said base layer has a concave region.
Claim 5
Dependent Claim
21 words
A method according to claim 3 , wherein said base layer is heated at a temperature of at least 100° C.
Claim 6
Dependent Claim
19 words
A method according to claim 1 , wherein said base layer is heated during said exposing to said gas.
Claim 7
Dependent Claim
52 words
A method according to claim 1 , wherein said reforming of the surface and said film forming are performed in one and the same chamber, and, after completing said reforming, said film forming is performed without exposure of the base layer to an atmosphere outside of the one and the same chamber.
Claim 8
Dependent Claim
16 words
A method according to claim 1 wherein said inorganic silicon halogen compound is a silicon halide.
Claim 9
Dependent Claim
22 words
A method according to claim 1 wherein said surface of said base layer is a surface of a thermal SiO 2 film.
Claim 10
Dependent Claim
46 words
A method according to claim 1 wherein said base layer has a surface with dangling Si bonds rendered hydropilific by contact with moisture and wherein said reforming serves to bond halogen to Si through the dangling bonds at the surface to produce the exposed halogenated surface.
Claim 11
Dependent Claim
24 words
A method according to claim 1 wherein said inorganic silicon halogen compound is an inorganic silicon chlorine compound and wherein said surface is chlorinated.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-03 | 2006-08-05 | 2007-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-03 | 2010-08-05 | 2011-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-03 | 2014-08-05 | 2015-02-04 | $7700.00 | Window Closed / Lapsed |