Patent US2583779A successfully refreshed from Google Patents.
US5365877A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing semiconductor in vapor phase
Assignee: Toshiba Corp
•
Filing: 1993-07-16
•
Granted: 1994-11-22
•
Expires: 2013-07-16
Abstract
Abstract A method of growing semiconductor in a vapor phase wherein a silicon oxide film on the surface of a semiconductor substrate wafer is removed, and a silicon layer is grown on the surface of the semiconductor substrate wafer in a vapor phase while rapidly rotating the wafer about a shaft substantially vertical to the wafer.
Inventors
- 👤 Hiroyasu Kubota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0209; C23C16/0218; C23C16/44; C23C16/455; C23C16/45502; C23C16/45587; C23C16/45591; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/06
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
85 words
A method of vapor phase epitaxial growth, comprising the steps of: removing a silicon oxide film on a surface of a semiconductor substrate wafer; and growing a silicon layer on the surface of said semiconductor substrate wafer by blowing a reaction gas and a carrier gas towards the surface of said wafer along a shaft substantially vertical to said wafer while rotating said wafer about said shaft at a rotational speed of 1,000 to 3,000 rpm and at a reduced pressure of about 100 Torr.
Claim 2
Independent Claim
85 words
A method of vapor phase epitaxial growth, comprising the steps of: removing a silicon oxide film on a surface of a semiconductor substrate wafer; and growing a silicon layer on the surface of said semiconductor substrate wafer by blowing a reaction gas and a carrier gas towards the surface of said wafer along a shaft substantially vertical to said wafer while rotating said wafer about said shaft at a rotational speed of 1,000 to 3,000 rpm and at a reduced pressure of about 100 Torr.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said vapor phase epitaxial growth is performed by heating said wafer up to about 1000° C.
Claim 4
Dependent Claim
41 words
A method according to claim 2, wherein said vapor phase epitaxial growth is performed by using SiH 2 Cl 2 as a reaction gas and by flowing a carrier gas at a flow rate equal to or slower than 10 l/min.
Claim 5
Dependent Claim
39 words
A method according to claim 2, wherein said vapor phase epitaxial growth is performed by using SiHCl 3 as a reaction gas and by flowing a carrier gas at a flow rate equal to or slower than 10 l/min.
Claim 6
Dependent Claim
39 words
A method according to claim 2, wherein said vapor phase epitaxial growth is performed by using SiH 4 as a reaction gas and by flowing a carrier gas at a flow rate equal to or slower than 10 l/min.
Claim 7
Dependent Claim
24 words
A method according to claim 3, wherein said step of removing said silicon oxide film is carried out by an H 2 reduction method.
Claim 8
Dependent Claim
24 words
A method according to claim 4, wherein said step of removing said silicon oxide film is carried out by an H 2 reduction method.
Claim 9
Dependent Claim
24 words
A method according to claim 5, wherein said step of removing said silicon oxide film is carried out by an H 2 reduction method.
Claim 10
Dependent Claim
23 words
A method according to claim 3, wherein said step of removing said silicon oxide film is carried out by an ion sputtering method.
Claim 11
Dependent Claim
23 words
A method according to claim 4, wherein said step of removing said silicon oxide film is carried out by an ion sputtering method.
Claim 12
Dependent Claim
23 words
A method according to claim 5, wherein said step of removing said silicon oxide film is carried out by an ion sputtering method.
Claim 13
Dependent Claim
25 words
A method according to claim 3, wherein said step of removing said silicon oxide film is carried out by an HF vapor phase etching method.
Claim 14
Dependent Claim
25 words
A method according to claim 4, wherein said step of removing said silicon oxide film is carried out by an HF vapor phase etching method.
Claim 15
Dependent Claim
25 words
A method according to claim 5, wherein said step of removing said silicon oxide film is carried out by an HF vapor phase etching method.
Claim 16
Dependent Claim
38 words
A method according to claim 1, wherein said vapor phase epitaxial growth is performed using SiH 2 Cl 2 as said reaction gas and by flowing said carrier gas at a flow rate of 10 l/min or less.
Claim 17
Dependent Claim
36 words
A method according to claim 1, wherein said vapor phase epitaxial growth is performed using SiHCl 3 as said reaction gas and by flowing said carrier gas at a flow rate of 10 l/min or less.
Claim 18
Dependent Claim
36 words
A method according to claim 1, wherein said vapor phase epitaxial growth is performed using SiH 4 as said reaction gas and by flowing said carrier gas at a flow rate of 10 l/min or less.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |