US6448128B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor for semiconductor memory device and method of manufacturing the same
Assignee: SK Hynix Inc
•
Filing: 2000-06-30
•
Granted: 2002-09-10
•
Expires: 2020-06-30
Abstract
Abstract Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO) 1-x (TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO) 1-x (TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO) 1-x (TiO)N layer.
Inventors
- 👤 Kee Jeung Lee
- 👤 Dong Jun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:43
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/01; H10D1/041; H10D1/042; H10D1/692; H10D1/711; H10D1/712; H10D1/716; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6544; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69397; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
55 words
A method of manufacturing a capacitor on a semiconductor substrate comprising the steps of: forming a lower electrode on the semiconductor substrate; depositing a (TaO) 1-x (TiO)N layer as a dielectric layer on the upper part of the lower electrode; and forming an upper electrode on the upper part of the (TaO) 1-x (TiO)N layer.
Claim 2
Independent Claim
55 words
A method of manufacturing a capacitor on a semiconductor substrate comprising the steps of: forming a lower electrode on the semiconductor substrate; depositing a (TaO) 1-x (TiO)N layer as a dielectric layer on the upper part of the lower electrode; and forming an upper electrode on the upper part of the (TaO) 1-x (TiO)N layer.
Claim 3
Dependent Claim
60 words
The method according to claim 1 , wherein the (TaO) 1-x (TiO)N layer is formed by a wafer surface chemical reaction of Ta chemical vapor, Ti chemical vapor, NH 3 gas and O 2 gas in a restraint state of a gas phase reaction in a low pressure chemical vapor deposition(LPCVD) chamber maintaining a temperature of 300 to 600° C.
Claim 4
Dependent Claim
23 words
The method according to claim 2 , wherein the NH 3 gas and O 2 gas are supplied by 10 to 1000 sccm.
Claim 5
Dependent Claim
28 words
The method according to claim 2 , wherein the Ta chemical vapor and Ti chemical vapor are supplied so that mole ratio of Ti/Ta is 0.01 to 1.
Claim 6
Dependent Claim
30 words
The method according to claim 4 , wherein the Ta chemical vapor is obtained by evaporating an organic metal precursor containing tantalum at a temperature of 140 to 220° C.
Claim 7
Dependent Claim
29 words
The method according to claim 5 , wherein the organic metal precursor containing tantalum is Ta(OC 2 H 5 ) 5 or Ta(N(CH 3 ) 2 ) 5 .
Claim 8
Dependent Claim
30 words
The method according to claim 4 , wherein the Ti chemical vapor is obtained by evaporating an organic metal precursor containing titanium at a temperature of 200 to 300° C.
Claim 9
Dependent Claim
31 words
The method according to claim 7 , wherein the organic metal precursor containing titanium is one selected among Ti[OCH(CH 3 ) 2 ] 4 , TiCl 4 , TDMAT and TDEAT.
Claim 10
Dependent Claim
46 words
The method according to claim 1 , wherein a surface-treatment for preventing a natural oxide layer from generating on the surface of the lower electrode is additionally performed between the step of forming the lower electrode and the step of depositing the (TaO) 1-x (TiO)N layer.
Claim 11
Dependent Claim
38 words
The method according to claim 9 , wherein the surface-treatment is thermal-treated at a temperature of 300 to 600° C. in the LPCVD chamber using plasma having atmosphere of NH 3 gas or N 2 /H 2 gas.
Claim 12
Dependent Claim
30 words
The method according to claim 9 , wherein the surface-treatment is performed by the RTN at temperature of 500 to 1000° C. in a chamber having an NH, gas atmosphere.
Claim 13
Dependent Claim
28 words
The method according to claim 9 , wherein the surface-treatment is thermal-treated at a temperature of 500 to 1000° C. in a furnace having NH 3 gas atmosphere.
Claim 14
Dependent Claim
30 words
The method according to claim 9 , wherein during the surface-treatment, the surface of the lower electrode is cleaned by using HF vapor, HF solution, or a compound containing HF.
Claim 15
Dependent Claim
31 words
The method according to claim 13 , wherein an interface-treatment is additionally performed by using NH 4 OH solution or H 2 SO 4 solution before or after the cleaning step.
Claim 16
Dependent Claim
23 words
The method according to claim 9 , wherein the surface-treatment is thermal-treated under atmosphere of N 2 O gas or O 2 gas.
Claim 17
Dependent Claim
42 words
The method according to claim 1 , further comprising a step of crystallizing the (TaO) 1-x (TiO)N layer and simultaneously outward-diffusing reaction by-products therein between the step of forming the (TaO) 1-x (TiO)N layer and the step of forming the upper electrode.
Claim 18
Dependent Claim
40 words
The method according to claim 16 , wherein the crystallizing and outward-diffusing step is performed by RTP under an atmosphere of N 2 O gas, O 2 gas or N 2 gas at a temperature of 550 to 950° C.
Claim 19
Dependent Claim
41 words
The method according to claim 16 , wherein the crystallizing and outward-diffusing step is annealed by a furnace under an atmosphere of N 2 O gas, O 2 gas or N 2 gas at a temperature of 550 to 950° C.
Claim 20
Independent Claim
119 words
A method of manufacturing a capacitor on a semiconductor substrate comprising the steps of: forming a lower electrode on the semiconductor substrate; surface-treating to prevent a natural oxide layer from generating on the surface of the lower electrode; depositing the (TaO) 1-x (TiO)N layer as a dielectric on the upper part of the lower electrode; diffusing and simultaneously crystallizing impurities inside the (TaO) 1-x (TiO)N layer; and forming an upper electrode on the upper part of the (TaO) 1-x (TiO)N layer, wherein the (TaO) 1-x (TiO)N layer is formed by a surface chemical reaction of Ta chemical, Ti chemical vapor, NH 3 gas and O 2 gas in an LPCVD chamber maintaining a temperature of 300 to 600° C.
Claim 21
Independent Claim
119 words
A method of manufacturing a capacitor on a semiconductor substrate comprising the steps of: forming a lower electrode on the semiconductor substrate; surface-treating to prevent a natural oxide layer from generating on the surface of the lower electrode; depositing the (TaO) 1-x (TiO)N layer as a dielectric on the upper part of the lower electrode; diffusing and simultaneously crystallizing impurities inside the (TaO) 1-x (TiO)N layer; and forming an upper electrode on the upper part of the (TaO) 1-x (TiO)N layer, wherein the (TaO) 1-x (TiO)N layer is formed by a surface chemical reaction of Ta chemical, Ti chemical vapor, NH 3 gas and O 2 gas in an LPCVD chamber maintaining a temperature of 300 to 600° C.
Claim 22
Dependent Claim
28 words
The method according to claim 19 , wherein the Ta chemical vapor and Ti chemical vapor are supplied so that mole ratio of Ti/Ta is 0.01 to 1.
Claim 23
Dependent Claim
30 words
The method according to claim 19 , wherein the Ta chemical vapor is obtained by evaporating an organic metal precursor containing tantalum at a temperature of 140 to 220° C.
Claim 24
Dependent Claim
28 words
The method according to claim 19 , wherein the organic metal precursor containing tantalum is Ta(OC 2 H 5 ) or Ta(N(CH 3 ) 2 ) 5 .
Claim 25
Dependent Claim
30 words
The method according to claim 19 , wherein the Ti chemical vapor is obtained by evaporating an organic metal precursor containing titanium at a temperature of 200 to 300° C.
Claim 26
Dependent Claim
30 words
The method according to claim 23 , wherein the organic metal precursor containing is one selected among Ti[OCH(CH 3 ) 2 ] 4 , TiCl 4 , TDMAT and TDEAT.
Claim 27
Dependent Claim
23 words
The method according to claim 19 , wherein the NH 3 gas and O 2 gas are supplied by 10 to 1000 sccm.
Claim 28
Dependent Claim
50 words
The method according to claim 19 , wherein the surface treatment for preventing the generation of the natural oxide layer is thermal-treated at a temperature of 300 to 600° C. in an LPCVD chamber using a plasma having an atmosphere of NH 3 gas or N 2 /H 2 gas.
Claim 29
Dependent Claim
41 words
The method according to claim 19 , wherein the surface-treatment for preventing the generation of the natural oxide layer is performed by RTN at a temperature of 500 to 1000° C. in an LPCVD chamber having a NH 3 gas atmosphere.
Claim 30
Dependent Claim
38 words
The method according to claim 19 , wherein the surface-treatment for preventing the generation of the natural oxide layer is performed at a temperature of 500 to 1000° C. in a furnace having an NH 3 gas atmosphere.
Claim 31
Dependent Claim
38 words
The method according to claim 19 , wherein during the surface-treatment for preventing the generation of the natural oxide layer, the surface of the lower electrode is cleaned by HF vapor, HF solution or a compound containing HF.
Claim 32
Dependent Claim
30 words
The method according to claim 29 , wherein before or after the cleaning step, a interface-treatment is additionally performed by NH 4 OH solution or H 2 SO 4 solution.
Claim 33
Dependent Claim
30 words
The method according to claim 19 , wherein the surface-treatment for preventing the natural oxide layer is thermal-treated under an atmosphere of N 2 O gas or O 2 gas.
Claim 34
Dependent Claim
40 words
The method according to claim 19 , wherein the crystallizing and outward-diffusing step is performed by RTP under an atmosphere of N 2 O gas, O 2 gas, and N 2 gas at a temperature of 550 to 950° C.
Claim 35
Dependent Claim
41 words
The method according to claim 19 , wherein the crystallizing and outward-diffusing step is annealed by a furnace under an atmosphere of N 2 O gas, O 2 gas, or N 2 gas at a temperature of 550 to 950° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-09 | 2006-03-11 | 2006-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-09 | 2010-03-11 | 2010-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-09 | 2014-03-11 | 2014-09-10 | $7700.00 | Window Closed / Lapsed |