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US6352865B2
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Method for fabricating a capacitor for a semiconductor device
Assignee: SK Hynix Inc
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Filing: 2000-12-22
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Granted: 2002-03-05
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Expires: 2020-12-22
Abstract
Abstract The present invention discloses a method for fabricating a capacitor for a semiconductor device. The method includes the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film on the lower electrode; performing a thermal treatment on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film. A capacitance for the operation of a high integration device is sufficiently obtained by using the (Ta 2 O 5 ) 1−x —(TiO 2 ) x film having a high dielectric constant, thereby fabricating the capacitor suitable for the high integration semiconductor device.
Inventors
- 👤 Kee Jeung Lee
- 👤 Dong Jun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/56; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/6538; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69393
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
71 words
A method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode on a predetermined location of a semiconductor substrate; forming an amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film on the lower electrode, the value of x being less than 0.5; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 2
Independent Claim
71 words
A method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode on a predetermined location of a semiconductor substrate; forming an amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film on the lower electrode, the value of x being less than 0.5; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 3
Dependent Claim
18 words
The method according to claim 1 , wherein the lower electrode further comprises a layer of doped polysilicon.
Claim 4
Dependent Claim
53 words
The method according to claim 1 , further comprising the step of performing a wet cleaning process, the wet cleaning process comprising use of a HF acid solution, wherein the wet cleaning process is completed before the step of forming the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 5
Dependent Claim
25 words
The method according to claim 3 , the wet cleaning process further comprising use of a Na 4 OH or H 2 SO 4 solution.
Claim 6
Dependent Claim
55 words
The method according to claim 1 , further comprising the step of performing a dry cleaning process, the dry cleaning process comprising use of a HF vapor, the step of performing the dry cleaning process being completed before the step of forming the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 7
Dependent Claim
53 words
The method according to claim 5 , further comprising the step of performing a wet cleaning process, the wet cleaning process comprising use of a Na 4 OH or H 2 SO 4 solution, the step of performing the wet cleaning process being performed after the step of performing the dry cleaning process.
Claim 8
Dependent Claim
34 words
The method according to claim 1 , wherein the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film is formed by using a Ta chemical vapor and a Ti chemical vapor.
Claim 9
Dependent Claim
30 words
The method according to claim 1 , wherein the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film has a thickness of between 10 and 100 Å.
Claim 10
Dependent Claim
54 words
The method according to claim 1 , wherein the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film is formed by injecting the Ta chemical vapor, Ti chemical vapor, and O 2 or N 2 O gas into a low pressure chemical vapor deposition (LPCVD) chamber of 300 to 600° C.
Claim 11
Dependent Claim
44 words
The method according to claim 7 , wherein the Ti chemical vapor is obtained by feeding Ti[OCH(CH 3 ) 2 ] 4 into an evaporator at a rate of less than 300 mg/minute, the evaporator maintaining a temperature of between 200 and 300° C.
Claim 12
Dependent Claim
44 words
The method according to claim 7 , wherein the Ti chemical vapor is obtained by feeding titanium tetrachloride, tetrakis-dimethylamido-Ti or tetrakis-diethylamodo-Ti into an evaporator at a rate of less than 300 mg/minute, the evaporator being maintaining at a temperature of at least 150° C.
Claim 13
Dependent Claim
38 words
The method according to claim 7 , wherein the Ta chemical vapor and the Ti chemical vapor are fed into the LPCVD chamber in amounts sufficient to produce a mole ratio of Ti:Ta of between 0.01 and 1.0.
Claim 14
Dependent Claim
76 words
The method according to claim 1 , further comprising the step of performing a low temperature thermal treatment by using O 2 or N 2 O, UV—O 3 , or N 2 O or O 2 plasma at a temperature ranging from 300 to 600° C., wherein the step of performing a low temperature thermal anneal is performed after the step of depositing the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 15
Dependent Claim
23 words
The method according to claim 1 , wherein the upper electrode comprises a doped polysilicon film, a TiN film or a metal substance.
Claim 16
Dependent Claim
31 words
The method according to claim 14 , wherein the metal substance is selected from the group consisting of TaN, W, WN, WSi, Ru, RuO 2 , Ir, IrO 2 and Pt.
Claim 17
Dependent Claim
24 words
The method according to claim 1 , wherein the upper electrode has a stacked structure comprising a TiN layer and a doped polysilicon layer.
Claim 18
Independent Claim
91 words
A method for fabricating a capacitor for a semicondustor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film on the lower electrode, wherein 0.02 ≦x≦0.5; performing a thermal treatment on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 19
Independent Claim
91 words
A method for fabricating a capacitor for a semicondustor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film on the lower electrode, wherein 0.02 ≦x≦0.5; performing a thermal treatment on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x film.
Claim 20
Dependent Claim
46 words
The method according to claim 17 , wherein the thermal treatment is performed in an O 2 or N 2 O, or UV—O 3 or O 3 atmosphere by using N 2 O or O 2 plasma at a temperature ranging from 300 to 600° C.
Claim 21
Independent Claim
92 words
A method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming a (Ta 2 O 5 ) 1−x —(TiO 2 ) x dielectric film on the lower electrode, wherein 0.02≦x≦0.5; performing a thermal treatment on the (Ta 2 O 5 ) 1 −x —(TiO 2 ) x dielectric film; and forming an upper electrode on the (Ta 2 O 5 ) 1 −x —(TiO 2 ) x dielectric film.
Claim 22
Independent Claim
92 words
A method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming a (Ta 2 O 5 ) 1−x —(TiO 2 ) x dielectric film on the lower electrode, wherein 0.02≦x≦0.5; performing a thermal treatment on the (Ta 2 O 5 ) 1 −x —(TiO 2 ) x dielectric film; and forming an upper electrode on the (Ta 2 O 5 ) 1 −x —(TiO 2 ) x dielectric film.
Claim 23
Dependent Claim
46 words
The method according to claim 19 , wherein the thermal treatment is performed in an O 2 or N 2 O, or UV—O 3 or O 3 atmosphere by using N 2 O or O 2 plasma at a temperature ranging from 300 to 600° C.
References Cited (Backward Citations)
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