US6180482B1
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Method for manufacturing high dielectric capacitor
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-07-28
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Granted: 2001-01-30
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Expires: 2018-07-28
Abstract
Abstract A method for manufacturing a high dielectric capacitor is provided. A capacitor cell unit comprised of an amorphous, high dielectric film which is formed on a semiconductor substrate. Next, the amorphous high dielectric film is crystallized by annealing the capacitor cell unit under a non-oxidizing atmosphere.
Inventors
- 👤 Chang-seok Kang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:47
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6544; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
61 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a capacitor cell unit comprised of a high dielectric film including an amorphous portion of the semiconductor substrate; and crystallizing substantially all of the high dielectric film including an amorphous portion by annealing the capacitor cell unit, to form a single-layer crystallized high dielectric film.
Claim 2
Independent Claim
61 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a capacitor cell unit comprised of a high dielectric film including an amorphous portion of the semiconductor substrate; and crystallizing substantially all of the high dielectric film including an amorphous portion by annealing the capacitor cell unit, to form a single-layer crystallized high dielectric film.
Claim 3
Dependent Claim
48 words
The method of claim 1 , wherein the step of forming the capacitor cell unit includes the step of: forming the amorphous high dielectric film by chemical vapor deposition at a deposition temperature selected to achieve step coverage by the high dielectric film of at least about 80%.
Claim 4
Dependent Claim
15 words
The method of claim 2 , wherein the deposition temperature is 480° C. or less.
Claim 5
Dependent Claim
48 words
The method of claim 2 , wherein the high dielectric material is one selected from the group consisting of SrTiO 3 , (Ba, Sr)TiO 3 , PbZrTiO 3 , SrBi 2 Ta 2 O 9 , (Pb, La)(Zr, Ti)O 3 and Bi 4 Ti 3 O 12 .
Claim 6
Dependent Claim
27 words
The method of claim 1 , wherein the step of forming the capacitor cell unit includes the step of: forming the amorphous high dielectric film by sputtering.
Claim 7
Dependent Claim
32 words
The method of claim 1 , wherein the step of crystallizing the amorphous high dielectric film includes the step of: annealing the capacitor cell unit at 500˜800° C. under a non-oxidizing atmosphere.
Claim 8
Dependent Claim
62 words
The method of claim 1 , wherein the step of forming the capacitor cell unit includes the steps of: forming a first conductive film pattern on the semiconductor substrate; forming the amorphous high dielectric film on the first conductive film pattern; forming a second conductive film on the high dielectric film; and patterning the second conductive film and the high dielectric film.
Claim 9
Dependent Claim
25 words
The method of claim 7 , wherein the first conductive film pattern and the second conductive film are formed of a material resistant to oxidation.
Claim 10
Dependent Claim
24 words
The method of claim 8 , wherein the material resistant to oxidation comprises a platinum group metal or a conductive platinum group metal oxide.
Claim 11
Dependent Claim
54 words
The method of claim 7 , wherein the step of forming the amorphous high dielectric film on the first conductive film pattern includes the step of: depositing a high dielectric material from a chemical vapor at a temperature selected to achieve the step coverage of the high dielectric film of at least about 80%.
Claim 12
Dependent Claim
40 words
The method of claim 7 , wherein the step of forming the amorphous high dielectric film on the first conductive film pattern includes the step of: forming the amorphous high dielectric film on the first conductive film pattern by sputtering.
Claim 13
Independent Claim
81 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming a first conductive film pattern on the semiconductor substrate; forming an amorphous high dielectric film on the first conductive film pattern; forming a second conductive film on the amorphous high dielectric film; forming a capacitor cell unit by patterning the second conductive film and the amorphous high dielectric film; and crystallizing substantially all of the amorphous high dielectric film by annealing the capacitor cell unit.
Claim 14
Independent Claim
81 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming a first conductive film pattern on the semiconductor substrate; forming an amorphous high dielectric film on the first conductive film pattern; forming a second conductive film on the amorphous high dielectric film; forming a capacitor cell unit by patterning the second conductive film and the amorphous high dielectric film; and crystallizing substantially all of the amorphous high dielectric film by annealing the capacitor cell unit.
Claim 15
Dependent Claim
29 words
The method of claim 12 , wherein the first conductive film pattern and the second conductive film comprise a platinum group metal or a conductive platinum group metal oxide.
Claim 16
Dependent Claim
44 words
The method of claim 12 , wherein the step of forming the amorphous high dielectric film includes the step of: depositing a high dielectric material from a chemical vapor at a deposition temperature selected to provide a step coverage of at least about 80%.
Claim 17
Dependent Claim
47 words
The method of claim 14 , wherein the high dielectric material is selected from the group consisting of SrTiO 3 , (Ba, Sr)TiO 3 , PbZrTiO 3 , SrBi 2 Ta 2 O 9 , (Pb, La)(Zr, Ti)O 3 and Bi 4 Ti 3 O 12 .
Claim 18
Dependent Claim
28 words
The method of claim 12 , wherein the step of forming the amorphous high dielectric film includes the step of: forming the amorphous high dielectric film by sputtering.
Claim 19
Dependent Claim
15 words
The method of claim 12 , wherein the deposition temperature is 480° C. or less.
Claim 20
Dependent Claim
24 words
The method of claim 12 , wherein the step of annealing the capacitor cell unit is performed at 500˜800° C. under a non-oxidizing atmosphere.
Claim 21
Independent Claim
133 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming an insulating film having a contact plug, on the semiconductor substrate; sequentially forming a diffusion preventing film pattern and a first conductive film pattern comprised of a metal resistant to oxidation or a conductive platinum group metal, on the insulating film; forming an amorphous high dielectric film on the first conductive film pattern by depositing a high dielectric material at a temperature of 480° C. or less; forming a second conductive film on the high dielectric film; forming a capacitor cell unit by sequentially patterning the second conductive film and the high dielectric film; and crystallizing the amorphous high dielectric film by annealing the capacitor cell unit at a temperature of 500˜800° C. under a non-oxidizing atmosphere.
Claim 22
Independent Claim
133 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming an insulating film having a contact plug, on the semiconductor substrate; sequentially forming a diffusion preventing film pattern and a first conductive film pattern comprised of a metal resistant to oxidation or a conductive platinum group metal, on the insulating film; forming an amorphous high dielectric film on the first conductive film pattern by depositing a high dielectric material at a temperature of 480° C. or less; forming a second conductive film on the high dielectric film; forming a capacitor cell unit by sequentially patterning the second conductive film and the high dielectric film; and crystallizing the amorphous high dielectric film by annealing the capacitor cell unit at a temperature of 500˜800° C. under a non-oxidizing atmosphere.
Claim 23
Independent Claim
81 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming a first conductive film pattern on the semiconductor substrate; forming a high dielectric film on the first conductive film pattern; forming a second conductive film on the high dielectric film; crystallizing the high dielectric film by annealing the resultant structure having the second conductive film to form a single-layer crystallized high dielectric film; and patterning the second conductive film and the crystallized high dielectric film.
Claim 24
Independent Claim
81 words
A method for manufacturing a semiconductor capacitor comprising the steps of: providing a semiconductor substrate; forming a first conductive film pattern on the semiconductor substrate; forming a high dielectric film on the first conductive film pattern; forming a second conductive film on the high dielectric film; crystallizing the high dielectric film by annealing the resultant structure having the second conductive film to form a single-layer crystallized high dielectric film; and patterning the second conductive film and the crystallized high dielectric film.
References Cited (Backward Citations)
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