US5390072A
Expired / Lapsed
US
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Thin film capacitors
Assignee: Round Rock Research LLC
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Filing: 1992-09-17
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Granted: 1995-02-14
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Expires: 2012-09-17
Abstract
Abstract The invention relates to a method for forming a high capacitance thin film capacitor comprising forming an amorphous layer of a dielectric material on the surface of a polycrystalline layer of said dielectric material and arranging the resulting double layer between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.
Inventors
- 👤 Wayne A. Anderson
- 👤 Robert S. Hamilton
- 👤 Quanxi Jia
- 👤 Zhiqing Shi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:18
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/20; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
55 words
A method for preparing a dielectric article comprising forming a dielectric material into first and second film layers arranged in opposing juxtaposition, one of said layers comprising said dielectric material in amorphous configuration, the other of said layers comprising said dielectric material in polycrystalline configuration, and arranging said opposing layers between upper and lower electrodes.
Claim 2
Independent Claim
55 words
A method for preparing a dielectric article comprising forming a dielectric material into first and second film layers arranged in opposing juxtaposition, one of said layers comprising said dielectric material in amorphous configuration, the other of said layers comprising said dielectric material in polycrystalline configuration, and arranging said opposing layers between upper and lower electrodes.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said dielectric article is arranged in a semiconductor substrate structure.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein said amorphous layer of said dielectric material is formed on a surface of said polycrystalline layer of said dielectric material.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said polycrystalline layer of said dielectric material is formed on a surface of said amorphous layer of said dielectric material.
Claim 6
Dependent Claim
50 words
The method of claim 2 wherein said first layer is formed on said semiconductor substrate structure; said second layer is formed on said first layer; an upper electrode is arranged in electrical communication with said first layer; and a lower electrode is arranged in electrical communication with said semiconductor substrate.
Claim 7
Dependent Claim
47 words
The method of claim 2 wherein said first layer is formed on a electrode which is arranged in electrical communication with said semiconductor substrate structure; said second layer is formed on said first layer and an upper electrode is arranged in electrical communication with said second layer.
Claim 8
Dependent Claim
26 words
The method of claim 2 wherein said semiconductor substrate structure comprises a material selected from the group consisting of Si, SiC, GaAs, CdS, ZnO and ZnS.
Claim 9
Dependent Claim
53 words
The method of claim 1 wherein said dielectric material is selected from the group consisting of BaTiO 3 , SrTiO 3 , KNO 3 , LiNbO 3 , Bi 4 Ti 3 O 12 , PbTiO 3 , PbZrO 3 , LaTiO 3 , PbMgO 3 , PbNbO 3 and LaZrO 3 .
Claim 10
Dependent Claim
26 words
The method of claim 1 wherein an electrode comprises a material selected from the group consisting of aluminum, copper, gold, silver, platinum, lead, ruthenium and palladium.
Claim 11
Dependent Claim
35 words
The method of claim 1 wherein a dielectric film layer is formed by a method selected from the group consisting of rf magnetron sputtering, vacuum evaporation, laser ablation, metal-organic chemical vapor deposition and E-beam evaporation.
Claim 12
Dependent Claim
15 words
The method of claim 10 wherein a film layer is formed by rf magnetron sputtering.
Claim 13
Dependent Claim
19 words
The method of claim 1 wherein said polycrystalline film layer is formed at a temperature above about 540° Centigrade.
Claim 14
Dependent Claim
23 words
The method of claim 12 wherein said polycrystalline film layer is formed at a temperature from about 540° Centigrade to about 1,000° Centigrade.
Claim 15
Dependent Claim
19 words
The method of claim 1 wherein said amorphous film layer is formed at a temperature below about 540° Centigrade.
Claim 16
Dependent Claim
21 words
The method of claim 14 wherein said amorphous film is formed at a temperature from about room to about 540° Centigrade.
Claim 17
Dependent Claim
23 words
The method of claim 1 wherein said polycrystalline film layer is formed to a thickness of from about 500 to about 10,000 angstroms.
Claim 18
Dependent Claim
23 words
The method of claim 16 wherein said polycrystalline film layer is formed to a thickness of from about 1,500 to about 5,000 angstroms.
Claim 19
Dependent Claim
23 words
The method of claim 1 wherein said amorphous film layer is formed to a thickness of from about 100 to about 1,000 angstroms.
Claim 20
Dependent Claim
23 words
The method of claim 18 wherein said amorphous film layer is formed to a thickness of from about 100 to about 500 angstroms.
Claim 21
Dependent Claim
24 words
The method of claim 1 wherein said first and second layers are separated by a gradient layer comprising quasi-amorphous or nanocrystalline configured dielectric material.
Claim 22
Dependent Claim
64 words
The method of claim 20 wherein said first and second layers are formed by depositing dielectric material in said first layer under first temperature conditions and depositing said dielectric material in said second layer under second temperature conditions and the gradient layer is formed by changing temperature conditions during deposition of said dielectric material from said first temperature conditions to said second temperature conditions.
Claim 23
Dependent Claim
56 words
The method of claim 21 wherein said polycrystalline layer is formed by deposition of a dielectric material at a temperature above about 540° Centigrade, temperature is lowered during deposition so as to deposit a gradient layer on the poly-crystalline layer comprising nanocrystalline or quasi-amorphous dielectric material and thereafter depositing an amorphous layer on the gradient layer.
Claim 24
Dependent Claim
56 words
The method of claim 21 wherein said amorphous layer is formed by deposition of a dielectric material at a temperature below about 500° Centigrade, temperature is raised during deposition so as to deposit a gradient layer on the amorphous layer comprising nanocrystalline or quasi-amorphous dielectric material and thereafter depositing a polycrystalline layer on the gradient layer.
Claim 25
Dependent Claim
17 words
The method of claim 1 comprising a further amorphous layer in opposing juxtaposition to said polycrystalline layer.
Claim 26
Dependent Claim
50 words
A high performance capacitor comprising first and second film layers of a dielectric material arranged in opposing juxtaposition, one said layer comprising said dielectric material in amorphous configuration, the other of said layers comprising said dielectric material in polycrystalline configuration, said opposing layers being arranged between upper and lower electrodes.
Claim 27
Dependent Claim
50 words
A high performance capacitor comprising first and second film layers of a dielectric material arranged in opposing juxtaposition, one said layer comprising said dielectric material in amorphous configuration, the other of said layers comprising said dielectric material in polycrystalline configuration, said opposing layers being arranged between upper and lower electrodes.
Claim 28
Dependent Claim
11 words
A capacitor of claim 25 arranged in a semiconductor substrate structure.
Claim 29
Dependent Claim
46 words
A capacitor of claim 26 wherein said first layer engages said semiconductor substrate structure; said second layer engages said first layer; an upper electrode is arranged in electrical communication with said first layer; and a lower electrode is arranged in electrical communication with said semiconductor substrate.
Claim 30
Dependent Claim
43 words
A capacitor of claim 26 wherein said first layer engages an electrode which is arranged in electrical communication with said semiconductor substrate structure; said second layer engages said first layer and an upper electrode is arranged in electrical communication with said second layer.
Claim 31
Dependent Claim
26 words
A capacitor of claim 26 wherein said semiconductor substrate structure comprises a material selected from the group consisting of Si, SiC, GaAs, CdS, ZnO and ZnS.
Claim 32
Dependent Claim
53 words
A capacitor of claim 25 wherein said dielectric material is selected from the group consisting of BaTiO 3 , SrTiO 3 , KNO 3 , LiNbO 3 , Bi 4 Ti 3 O 12 , PbTiO 3 , PbZrO 3 , LaTiO 3 , PbMgO 3 , PbNbO 3 and LaZrO 3 .
Claim 33
Dependent Claim
26 words
A capacitor of claim 25 wherein an electrode comprises a material selected from the group consisting of aluminum, copper, gold, silver, platinum, lead, ruthenium and palladium.
Claim 34
Dependent Claim
35 words
A capacitor of claim 25 wherein said dielectric film layer is formed by a method selected from the group consisting of rf magnetron sputtering, vacuum evaporation, laser ablation, metal-organic chemical vapor deposition and E-beam evaporation.
Claim 35
Dependent Claim
18 words
A capacitor of claim 25 wherein said polycrystalline film is from about 500 to about 10,000 angstroms thick.
Claim 36
Dependent Claim
18 words
A capacitor of claim 25 wherein said amorphous film is from about 100 to about 1,000 angstroms thick.
Claim 37
Dependent Claim
24 words
A capacitor of claim 25 wherein said first and second layers are separated by a gradient layer comprising quasi-amorphous or nanocrystalline configured dielectric material.
Claim 38
Dependent Claim
21 words
A capacitor of claim 35 wherein said gradient layer is formed by changing temperature conditions during deposition of the dielectric material.
Claim 39
Dependent Claim
17 words
A capacitor of claim 25 comprising a further amorphous layer in opposing juxtaposition to said polycrystalline layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-02-13 | 1998-08-15 | 1999-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-13 | 2002-08-15 | 2003-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-13 | 2006-08-15 | 2007-02-14 | $7700.00 | Window Closed / Lapsed |