EP0046868A2
Expired / Lapsed
EP
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Capacitor structure with dual dielectrics
Assignee: International Business Machines Corp
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Filing: 1981-07-21
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Granted: —
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Expires: 2001-07-21
Abstract
Abstract A capacitor structure for semiconductor devices (1, 2), utilizing a dual or duplex dielectric wherein one dielectric layer (3) is comprised of silicon nitride or aluminum oxide and a second dielectric layer (4) is formed of Ta2O5, HfO2, TiO2, PbTiO3, BaTiO3, CaTiO3 or SrTiO3. One electrode (2) is preferably selected from conductive polycrystalline silicon, Ta, and Hf. The other electrode (5) is preferably selected from Al or Au based metals.
Inventors
- 👤 James Kent Howard
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 00:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/20; H10B; H10B99/00; H10D1/62; H10D1/66
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
93 words
A capacitor structure with a dual dielectric (3, 4) between two electrodes (2, 5) said dual dielectric being characterized by a first dielectric layer (3) adjacent a first one (2) of said electrodes and selected from the group of silicon nitride and aluminum oxide, and a second dielectric layer (4) between said first dielectric layer (3) and a second one (5) of said electrodes and selected from the group consisting of T a 2 0 5 , HfO 2 , TiO 2 , PbTi03, BaTiO 3 , CaTi0 3 and SrTiO 3 .
Claim 2
Dependent Claim
93 words
A capacitor structure with a dual dielectric (3, 4) between two electrodes (2, 5) said dual dielectric being characterized by a first dielectric layer (3) adjacent a first one (2) of said electrodes and selected from the group of silicon nitride and aluminum oxide, and a second dielectric layer (4) between said first dielectric layer (3) and a second one (5) of said electrodes and selected from the group consisting of T a 2 0 5 , HfO 2 , TiO 2 , PbTi03, BaTiO 3 , CaTi0 3 and SrTiO 3 .
Claim 3
Dependent Claim
18 words
The capacitor structure of Claim 1, wherein one of the electrodes (2, 5) comprises a conductive polycrystalline silicon.
Claim 4
Dependent Claim
97 words
A capacitor structure on a silicon semiconductor device (12 - 17), characterized by a first electrode (18) in contact with a bared portion of said device and selected from the group of conductive polycrystalline silicon, tantalum and hafnium, a dual dielectric on said first electrode comprising a first dielectric layer (3A) selected from the group of silicon nitride and aluminum oxide, and a second dielectric layer (4A) selected from the group of Ta205, HfO 2 , Ti0 2 , PbTi0 3 , CaTiO 3 and SrTi0 3 , and a second electrode (19) on said dual dielectric.
Claim 5
Dependent Claim
97 words
A capacitor structure on a silicon semiconductor device (12 - 17), characterized by a first electrode (18) in contact with a bared portion of said device and selected from the group of conductive polycrystalline silicon, tantalum and hafnium, a dual dielectric on said first electrode comprising a first dielectric layer (3A) selected from the group of silicon nitride and aluminum oxide, and a second dielectric layer (4A) selected from the group of Ta205, HfO 2 , Ti0 2 , PbTi0 3 , CaTiO 3 and SrTi0 3 , and a second electrode (19) on said dual dielectric.
Claim 6
Dependent Claim
22 words
The capacitor structure of Claim 3, wherein the second electrode (19) is selected from the group of aluminum and gold based metals.
Claim 7
Dependent Claim
34 words
The capacitor structure of Claim 3, wherein the bared portion comprises an emitter region (14) of a bipolar element of an integrated circuit,in particular a memory array, in the semiconductor device (12 - 17).
References Cited (Backward Citations)
No citation records indexed.
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