US5843829A
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US
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Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof
Assignee: Fujitsu VLSI Ltd
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Filing: 1995-11-17
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Granted: 1998-12-01
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Expires: 2015-11-17
Abstract
Abstract A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.
Inventors
- 👤 Masaki Kuramae
- 👤 Fumitake Mieno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/714; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; Y; Y10; Y10S; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
199 words
A method for fabricating a semiconductor device in a cluster type production system, comprising the steps of: (a) setting the temperature of a substrate held in a vapor deposition apparatus of the system to a first temperature; (b) depositing an amorphous silicon layer on a surface of said substrate by introducing a source gas containing silicon into said vapor deposition apparatus such that said source gas is decomposed in the vicinity of the surface of said substrate; after said depositing step, (c) elevating the temperature of said substrate from said first temperature to a second, higher temperature capable of causing crystallization of said amorphous silicon layer, which converts the amorphous silicon layer to a polysilicon layer; (d) introducing an oxidation gas into said vapor deposition apparatus before the crystallization to form an oxide film from said oxidation gas on the surface of said amorphous silicon layer thereby suppressing diffusion of silicon atoms along a surface of said amorphous silicon layer during the crystallization, and preventing the development of a rough surface on the polysilicon layer which is produced by the crystallization; and (e) crystallizing said amorphous silicon layer by holding the temperature of said substrate at said second temperature.
Claim 2
Independent Claim
199 words
A method for fabricating a semiconductor device in a cluster type production system, comprising the steps of: (a) setting the temperature of a substrate held in a vapor deposition apparatus of the system to a first temperature; (b) depositing an amorphous silicon layer on a surface of said substrate by introducing a source gas containing silicon into said vapor deposition apparatus such that said source gas is decomposed in the vicinity of the surface of said substrate; after said depositing step, (c) elevating the temperature of said substrate from said first temperature to a second, higher temperature capable of causing crystallization of said amorphous silicon layer, which converts the amorphous silicon layer to a polysilicon layer; (d) introducing an oxidation gas into said vapor deposition apparatus before the crystallization to form an oxide film from said oxidation gas on the surface of said amorphous silicon layer thereby suppressing diffusion of silicon atoms along a surface of said amorphous silicon layer during the crystallization, and preventing the development of a rough surface on the polysilicon layer which is produced by the crystallization; and (e) crystallizing said amorphous silicon layer by holding the temperature of said substrate at said second temperature.
Claim 3
Dependent Claim
33 words
A method as claimed in claim 1, wherein said method further comprises the steps of: depositing a dielectric film on said polysilicon layer; and depositing a polysilicon electrode layer on said dielectric film.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said oxidation gas contains an element other than oxygen.
Claim 5
Dependent Claim
31 words
A method as claimed in claim 1, wherein said oxidation gas is selected from a group consisting of N 2 O, NO x , CO, CO 2 and O 2 .
Claim 6
Dependent Claim
18 words
A method as claimed in claim 1, wherein said introducing step occurs substantially simultaneously with said elevating step.
Claim 7
Dependent Claim
29 words
A method as claimed in claim 1, wherein said introducing step occurs when a temperature of said substrate has reached a temperature of pyrolytic decomposition of said oxidation gas.
Claim 8
Dependent Claim
18 words
A method as claimed in claim 1, wherein said introducing step occurs substantially continuously with said depositing step.
Claim 9
Dependent Claim
49 words
A method as claimed in claim 1, further comprising the step of: removing said substrate from said deposition apparatus after said depositing step, wherein said elevating step and said crystallizing step are applied to said substrate that has been removed from said vapor deposition apparatus by said removing step.
Claim 10
Dependent Claim
44 words
A method as claimed in claim 8, wherein said removing step is conducted such that said substrate is exposed to the air for an interval in which there is no substantial formation of native oxide film on the surface of said amorphous silicon layer.
Claim 11
Independent Claim
202 words
A method for fabricating a semiconductor device in a cluster type production system, comprising the steps of: (a) setting a temperature of a substrate held in a vapor deposition apparatus of the system to a first temperature; (b) depositing an amorphous silicon layer on a surface of said substrate by introducing a source gas containing silicon into said vapor deposition apparatus such that said source gas decomposes in the vicinity of a surface of said substrate; (c) elevating the temperature of said substrate, after said depositing step, from said first temperature to a second, higher temperature which causes crystallization in said amorphous silicon layer to form a polysilicon layer; and (d) crystallizing said amorphous layer by maintaining said second temperature; wherein there is provided an oxidation step, after said depositing step but before crystallization occurs in said amorphous layer, said oxidation step including the step of introducing a gas containing oxygen, such that an oxidation film is formed on a surface of said amorphous silicon layer to suppress diffusion of silicon atoms along the surface of said amorphous silicon layer during said crystallizing step, and to prevent the development of a rough surface on the polysilicon layer produced by said crystallizing step.
Claim 12
Independent Claim
202 words
A method for fabricating a semiconductor device in a cluster type production system, comprising the steps of: (a) setting a temperature of a substrate held in a vapor deposition apparatus of the system to a first temperature; (b) depositing an amorphous silicon layer on a surface of said substrate by introducing a source gas containing silicon into said vapor deposition apparatus such that said source gas decomposes in the vicinity of a surface of said substrate; (c) elevating the temperature of said substrate, after said depositing step, from said first temperature to a second, higher temperature which causes crystallization in said amorphous silicon layer to form a polysilicon layer; and (d) crystallizing said amorphous layer by maintaining said second temperature; wherein there is provided an oxidation step, after said depositing step but before crystallization occurs in said amorphous layer, said oxidation step including the step of introducing a gas containing oxygen, such that an oxidation film is formed on a surface of said amorphous silicon layer to suppress diffusion of silicon atoms along the surface of said amorphous silicon layer during said crystallizing step, and to prevent the development of a rough surface on the polysilicon layer produced by said crystallizing step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-11-30 | 2002-06-01 | 2002-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-30 | 2006-06-01 | 2006-12-01 | $3760.00 | Window Closed / Lapsed |
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