Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a polycrystalline Si transistor having large polycrystalline Si grain size and high performance by depositing an amorphous Si on an insulating film. densifying the amorphous Si, and crystallizing the amorphous Si by heat treating it at approx. 600 deg.C. CONSTITUTION:An insulating film 2 of an SiO2 or the like is formed on an Si substrate 1. The substrate 1 is set to a depositing unit of 10<-5> Pa or lower of vacuum degree, substrate temperature is held at 200 deg.C or lower, and an Si is deposited approx. 500nm thick on the film 2. Thereafter, the substrate is heated at 300-450 deg.C for 10 min to 1 hour without breaking the vacuum. Then, it is heat-treated at 600 deg.C for 15 hours in a nitrogen atmosphere to crystallize the amorphous Si film. An impurity, such as phosphorus or boron is doped in a predetermined quantity in the Si film 5, a predetermined part remains in a photolithoetching step, an unnecessary part is removed, and an MOS transistor is then formed.

Inventors

• 👤 Masayoshi Sasaki
• 👤 佐々木　正義
• 👤 Teruo Kato
• 👤 輝男 加藤

Bibliographic Details