US5315140A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a polysilicon capacitor with large grain diameter
Assignee: Renesas Electronics Corp
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Filing: 1993-01-22
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Granted: 1994-05-24
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Expires: 2013-01-22
Abstract
Abstract A semiconductor device includes a capacitor with an insulator having an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b which is formed of a polysilicon layer having a large crystal grain diameter (1000Å-10000Å).
Inventors
- 👤 Kazuyuki Sugahara
- 👤 Hideaki Arima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:55
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10D1/692; H10D1/711; H10D1/716; H10D62/00; H10D62/80; H10D62/83
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
157 words
A semiconductor device, comprising: a semiconductor substrate of a second conductivity type having a major surface and an impurity region of a first conductivity type located in said major surface; an insulating layer formed on said major surface of said semiconductor substrate and having an opening reaching said impurity region; a capacitor lower electrode having a first portion, which is in contact with a surface of said impurity region and a surface of said insulating layer and is formed of silicon crystal having a first grain diameter, and a second portion, which is in contact with at least an outermost edge of said first portion, extends upwardly from said major surface of said semiconductor substrate and is formed of silicon crystal having a second grain diameter larger than said first grain diameter; a capacitor insulating layer covering the surface of said capacitor lower electrode; and a capacitor upper electrode covering the surface of said capacitor insulating layer.
Claim 2
Dependent Claim
157 words
A semiconductor device, comprising: a semiconductor substrate of a second conductivity type having a major surface and an impurity region of a first conductivity type located in said major surface; an insulating layer formed on said major surface of said semiconductor substrate and having an opening reaching said impurity region; a capacitor lower electrode having a first portion, which is in contact with a surface of said impurity region and a surface of said insulating layer and is formed of silicon crystal having a first grain diameter, and a second portion, which is in contact with at least an outermost edge of said first portion, extends upwardly from said major surface of said semiconductor substrate and is formed of silicon crystal having a second grain diameter larger than said first grain diameter; a capacitor insulating layer covering the surface of said capacitor lower electrode; and a capacitor upper electrode covering the surface of said capacitor insulating layer.
Claim 3
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein said second grain diameter of said second portion is in a range from about 1000Å to about 10000Å.
Claim 4
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said second portion has a surface roughness of about 10Å or less.
Claim 5
Dependent Claim
48 words
A semiconductor device according to claim 1, wherein said second portion is formed on an upper surface of said first portion, and extends from a position above said outermost edge of said first portion in an upward direction with respect to said major surface of said semiconductor substrate.
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 1, wherein said second portion extends along said outermost edge of said first portion in an upward direction with respect to said major surface of said semiconductor substrate.
Claim 7
Dependent Claim
175 words
A semiconductor device, comprising: a semiconductor substrate of a second conductivity type having a major surface and an impurity region of a first conductivity type located in said major surface; an insulating layer formed on said major surface of said semiconductor substrate and having an opening reaching said impurity region; a capacitor lower electrode having a first portion, which is in contact with a surface of said impurity region and a surface of said insulating layer, and a second portion, which is in contact with at least an outermost edge of said first portion and extends upwardly from said major surface of said semiconductor substrate; a capacitor insulating layer covering the surface of said capacitor lower electrode; and a capacitor upper electrode covering the surface of said capacitor insulating layer, wherein said second portion comprises a lower part located on an upper surface of said outermost edge of said first portion and having a thickness along said major surface of said semiconductor substrate gradually increasing downward, and a higher part having a substantially uniform thickness.
Claim 8
Dependent Claim
175 words
A semiconductor device, comprising: a semiconductor substrate of a second conductivity type having a major surface and an impurity region of a first conductivity type located in said major surface; an insulating layer formed on said major surface of said semiconductor substrate and having an opening reaching said impurity region; a capacitor lower electrode having a first portion, which is in contact with a surface of said impurity region and a surface of said insulating layer, and a second portion, which is in contact with at least an outermost edge of said first portion and extends upwardly from said major surface of said semiconductor substrate; a capacitor insulating layer covering the surface of said capacitor lower electrode; and a capacitor upper electrode covering the surface of said capacitor insulating layer, wherein said second portion comprises a lower part located on an upper surface of said outermost edge of said first portion and having a thickness along said major surface of said semiconductor substrate gradually increasing downward, and a higher part having a substantially uniform thickness.
Claim 9
Dependent Claim
30 words
A semiconductor device according to claim 6, wherein said second portion is formed of silicon crystal having a crystal grain diameter in a range from about 1000Å to about 10000Å.
Claim 10
Dependent Claim
20 words
A semiconductor device according to claim 6, wherein said second portion has a surface roughness of about 10Å or less.
Claim 11
Dependent Claim
49 words
A semiconductor device according to claim 6, wherein said capacitor upper electrode has a portion opposed to said portion of said second portion of said capacitor lower electrode of which thickness gradually increases toward the lower side, and said portion of said capacitor upper electrode has a smooth shape.
References Cited (Backward Citations)
US4931897A
Cited
US5061650A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |