US5753945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
Assignee: RPX Clearinghouse LLC
•
Filing: 1996-02-01
•
Granted: 1998-05-19
•
Expires: 2016-02-01
Abstract
Abstract An integrated circuit structure including dielectric barrier layer compatible with perovskite ferroelectric materials and comprising zirconium titanium oxide, ZrTiO 4 , and a method of formation of the dielectric barrier layer by sol gel process is described. The amorphous, mixed oxide barrier layer has excellent dielectric properties up to GHz frequencies, and crystallizes above 800° C., facilitating device processing. In particular, the barrier layer is compatible with lead containing perovskites, including PZT and PLZT ferroelectric dielectrics for example for application in non-volatile memory cells, and high value capacitors for integrated circuits, using silicon or GaAs integrated circuit technologies.
Inventors
- 👤 Vasanta Chivukula
- 👤 Pak K. Leung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:02
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
37 words
An integrated circuit structure comprising a dielectric barrier layer disposed between a perovskite ferroelectric material and an other material, the barrier layer being provided by a layer of zirconium titanium oxide having a composition ZrTiO 4 .
Claim 2
Dependent Claim
37 words
An integrated circuit structure comprising a dielectric barrier layer disposed between a perovskite ferroelectric material and an other material, the barrier layer being provided by a layer of zirconium titanium oxide having a composition ZrTiO 4 .
Claim 3
Dependent Claim
20 words
A structure according to claim 1 wherein the layer of zirconium titanium oxide comprises a layer of an amorphous material.
Claim 4
Dependent Claim
26 words
A structure according to claim 1 wherein the other material is selected from the group of dielectrics consisting of silicon dioxide, silicon nitride and silicon oxynitride.
Claim 5
Dependent Claim
22 words
A structure according to claim 1 wherein the other material is a conductive material forming an electrode of a ferroelectric capacitor structure.
Claim 6
Dependent Claim
30 words
A structure according to claim 1 wherein the perovskite ferroelectric material is selected from the group consisting of lead zirconate titanate and lead lanthanum zirconate titanate and doped compositions thereof.
Claim 7
Dependent Claim
27 words
A structure according to claim 1 wherein the perovskite ferroelectric material is selected from the group consisting barium titanate and barium strontium titanate and doped compositions thereof.
Claim 8
Dependent Claim
13 words
A structure according to claim 1 wherein the perovskite ferroelectric material includes lead.
Claim 9
Dependent Claim
34 words
A structure according to claim 1 wherein the perovskite ferroelectric is selected from the group comprising lead magnesium niobate, and lead niobate, barium doped lead niobate, strontium doped lead niobate, and lead iron niobate.
Claim 10
Dependent Claim
32 words
A structure according to claim 1 wherein the perovskite ferroelectric material is selected from the group consisting of bi-layered ferroelectrics including bismuth titanate, strontium bismuth tantalum niobium oxide, strontium bismuth titanium oxide.
Claim 11
Dependent Claim
58 words
An integrated circuit including a ferroelectric capacitor structure comprising: first and second conductive electrodes and a perovskite ferroelectric dielectric material disposed between the electrodes, the capacitor structure being isolated by an other dielectric material, and a dielectric barrier layer provided by a layer of amorphous ZrTiO 4 disposed between the ferroelectric dielectric material and the other dielectric material.
Claim 12
Dependent Claim
58 words
An integrated circuit including a ferroelectric capacitor structure comprising: first and second conductive electrodes and a perovskite ferroelectric dielectric material disposed between the electrodes, the capacitor structure being isolated by an other dielectric material, and a dielectric barrier layer provided by a layer of amorphous ZrTiO 4 disposed between the ferroelectric dielectric material and the other dielectric material.
Claim 13
Dependent Claim
33 words
A structure according to claim 10 wherein the ferroelectric dielectric material is enclosed by another dielectric material and separated therefrom by a barrier layer provided by an amorphous layer of ZrTiO 4 .
Claim 14
Dependent Claim
16 words
A structure according to claim 1 wherein the barrier layer is formed on a semiconductor substrate.
Claim 15
Dependent Claim
12 words
A structure according to claim 12 wherein the semiconductor substrate comprises silicon.
Claim 16
Dependent Claim
12 words
A structure according to claim 12 wherein the semiconductor substrate comprises GaAs.
References Cited (Backward Citations)
US4758542A
Cited
US5133129A
Cited
US5198269A
Cited
US5122477A
Cited
US5212620A
Cited
US5326721A
Cited
US5187638A
Cited
US5356843A
Cited
US5330931A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |