US6339009B1
Expired / Lapsed
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Method of manufacturing capacitor of semiconductor device
Assignee: SK Hynix Inc
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Filing: 2000-11-09
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Granted: 2002-01-15
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Expires: 2020-11-09
Abstract
Abstract The present invention discloses a method of manufacturing a capacitor of high capacitance using a (Ta 2 O 5 ) 1−x (TiO 2 ) x thin film as dielectric layer. The method according to the present invention, comprising providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a low temperature; annealing the low temperature amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a high temperature to form a crystalline (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film as a dielectric layer; and forming an upper electrode on the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film.
Inventors
- 👤 Kee Jeung Lee
- 👤 Dong Jun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6319; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6508; H10P14/6516; H10P14/6544; H10P14/66; H10P14/668; H10P14/69394; H10D1/692; H10D1/711; H10D1/716; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69393
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
141 words
A method of manufacturing a capacitor of a semiconductor device, comprising: providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a low temperature; annealing the low temperature amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a high temperature so as to form a crystalline (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film as a dielectric layer; and forming an upper electrode on the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film.
Claim 2
Independent Claim
141 words
A method of manufacturing a capacitor of a semiconductor device, comprising: providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a low temperature; annealing the low temperature amorphous (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film at a high temperature so as to form a crystalline (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film as a dielectric layer; and forming an upper electrode on the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film.
Claim 3
Dependent Claim
18 words
The method according to claim 1 , wherein the lower electrode is made of a doped polysilicon layer.
Claim 4
Dependent Claim
45 words
The method according to claim 1 , further comprising a step of nitrifying the surface of the lower electrode between the step of forming the lower electrode and the step of depositing the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film.
Claim 5
Dependent Claim
36 words
The method according to claim 3 , wherein the nitrifying step is performed by discharging plasma in an LPCVD chamber of NH 3 gas or N 2 /H 2 gas in an in-Situ or ex-Situ state.
Claim 6
Dependent Claim
26 words
The method according to claim 4 , wherein the nitrifying step is performed at the temperature in which the semiconductor substrate is maintained at 300˜500° C.
Claim 7
Dependent Claim
25 words
The method according to claim 3 , wherein the nitrifying step is performed by annealing at 650˜950° C. under NH 3 gas atmosphere using RTP.
Claim 8
Dependent Claim
27 words
The method according to claim 3 , further comprising slightly oxidizing under NO 2 or O 2 gas atmosphere after nitrifying the surface of the lower electrode.
Claim 9
Dependent Claim
26 words
The method according to claim 1 , wherein the nitrifying step is performed by annealing at 500˜1,000° C. under NH 3 gas atmosphere using a furnace.
Claim 10
Dependent Claim
36 words
The method according to claim 1 , further comprising a step of cleaning the surface of the lower electrode using HF vapor or HF solution before the step of nitrifying the surface of the lower electrode.
Claim 11
Dependent Claim
35 words
The method according to claim 9 , further comprising cleaning the surface of the lower electrode using NH 4 OH solution or H 2 SO 4 solution before and after the cleaning step using HF.
Claim 12
Dependent Claim
61 words
The method according to claim 1 , wherein depositing the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film in the amorphous state is performed by supplying a predetermined amount of Ta compound vapor gas, Ti compound vapor gas and excess reaction gas O 2 into an LPCVD chamber of 300˜600° C. and less than 10 torr pressure.
Claim 13
Dependent Claim
37 words
The method according to claim 11 , wherein in the (Ta 2 O 5 ) 1−x —(TiO 2 ) x thin film has a mole ratio of Ti/Ta=0.01˜1.0 or so with X being less than about 0.5.
Claim 14
Dependent Claim
36 words
The method according to claim 11 , wherein the Ti compound vapor gas is obtained by supplying titanium isopropylate Ti[OCH(CH 3 ) 2 ] 4 solution into an evaporator or an evaporation tube of 200˜300° C.
Claim 15
Dependent Claim
32 words
The method according to claim 13 , wherein the Ti compound is titanium tetrachloride TiCl 4 , TDMAT (tetrakisdimethylamino)titanium or TDEAT (tetrakisdiethylamino)titanium or titanium isopropylate Ti[OCH(CH 3 ) 2 ] 4 .
Claim 16
Dependent Claim
49 words
The method according to claim 1 , wherein the Ta compound vapor gas is obtained by supplying Ta(OC 2 H 5 ) 5 solution into an evaporator or an evaporation tube of 140˜200° C. in a predetermined amount and evaporating the supplied Ta(OC 2 H 5 ) 5 solution.
Claim 17
Dependent Claim
21 words
The method according to claim 1 , wherein the low temperature annealing is performed at 300˜500° C. using UV—O 3 .
Claim 18
Dependent Claim
38 words
The method according to claim 1 , wherein the high temperature annealing is performed under N 2 O or O 2 or N 2 gas and at 650˜950° C. using a furnace or an RTP (Rapid Thermal Process).
Claim 19
Dependent Claim
27 words
The method according to claim 1 , wherein the upper electrode is made of TiN, TaN, W, WSi, Ru, RuO 2 , Ir, IrO 2 or Pt.
Claim 20
Dependent Claim
23 words
The method according to claim 1 , wherein the upper electrode is a stack structure of a metal layer and a buffer layer.
Claim 21
Dependent Claim
16 words
The method according to claim 19 , wherein the buffer layer is a doped polysilicon layer.
References Cited (Backward Citations)
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