EP0749134A1
Expired / Lapsed
EP
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Dielectric material comprising Ta2O5 doped with TiO2 and devices employing same
Assignee: AT&T Inc
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Filing: 1996-06-04
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Granted: —
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Expires: 2016-06-04
Abstract
Abstract Applicant has discovered that the dielectric constant of Ta 2 O 5 can be significantly enhanced by the addition of small quantities of TiO 2 . Specifically, if Ta 2 O 5 is doped with more than about 3 mole percent of TiO 2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta 2 O 5 :0.08 TiO 2 , the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.
Inventors
- 👤 Robert Joseph Cava
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:50
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
44 words
A dielectric material comprising (Ta 2 O 5 ) 1-x (TiO 2 ) x where 0.03 ≤ x ≤ 0.4 and the dielectric constant of said material measured at 20°C and 1 MHz is greater than that of undoped Ta 2 O 5 .
Claim 2
Dependent Claim
12 words
The dielectric material of claim 1 wherein 0.05 ≤ x ≤ 0.15.
Claim 3
Dependent Claim
32 words
A capacitor comprising a pair of conductive electrodes and, disposed between said electrodes, a layer of (Ta 2 O 5 ) 1-x (TiO 2 ) x where 0.03 ≤ x ≤ 0.4.
Claim 4
Dependent Claim
11 words
The capacitor of claim 3 wherein 0.05 ≤ x ≤ 0.15.
References Cited (Backward Citations)
EP0210033A1
Cited
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