EP0210033A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Dielectric thin films
Assignee: Sony Corp
•
Filing: 1986-07-14
•
Granted: —
•
Expires: 2006-07-14
Abstract
Abstract A high dielectric constant thin film deposited on a substrate can be used to form a capacitor. The thin film is composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent. The thin film is deposited on the substrate by chemical vapour deposition, for example using a tantalum alkoxide and a titanium alkoxide. A thin film of this type has a high dielectric strength as well as a high dielectric constant.
Inventors
- 👤 Masaki C/O Patents Division Saito
- 👤 Toshio C/O Patents Division Mori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 10:02
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/085; H01G4/10
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
44 words
A high dielectric constant thin film formed on a substrate, said thin film comprising a mixture of a tantalum oxide and a titanium oxide in which the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent.
Claim 2
Dependent Claim
44 words
A high dielectric constant thin film formed on a substrate, said thin film comprising a mixture of a tantalum oxide and a titanium oxide in which the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent.
Claim 3
Dependent Claim
18 words
A capacitor comprising a high dielectric constant thin film formed on a substrate in accordance with claim 1.
Claim 4
Independent Claim
56 words
A method of forming a high dielectric constant thin film on a substrate, which method comprises depositing on the substrate a thin film of a tantalum oxide and a titanium oxide by chemical vapour deposition, said thin film having a ratio of titanium (Ti) to tantalum (Ta) in the range of 0.1 to 4 atomic percent.
Claim 5
Independent Claim
56 words
A method of forming a high dielectric constant thin film on a substrate, which method comprises depositing on the substrate a thin film of a tantalum oxide and a titanium oxide by chemical vapour deposition, said thin film having a ratio of titanium (Ti) to tantalum (Ta) in the range of 0.1 to 4 atomic percent.
Claim 6
Dependent Claim
25 words
A method according to claim 3, wherein said chemical vapour deposition includes the step of oxygen-assisted pyrolysis of a tantalum alkoxide and a titanium alkoxide.
Claim 7
Dependent Claim
21 words
A method according to claim 4, wherein said tantalum alkoxide is tantalum pentaethylate and said titanium alkoxide is titanium tetra isopropylate.
Claim 8
Dependent Claim
26 words
A capacitor comprising a high dielectric constant thin film formed on a substrate in accordance with the method of any one of claims 3 to 5.
References Cited (Backward Citations)
JPS59102201A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.