US6335288B1
Expired / Lapsed
US
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Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
Assignee: Applied Materials Inc
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Filing: 2000-08-24
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Granted: 2002-01-01
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Expires: 2020-08-24
Abstract
Abstract A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.
Inventors
- 👤 Michael Kwan
- 👤 Eric Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/04; C23C16/045; C23C16/4401; C23C16/4405; C23C16/46; C23C16/463; C23C16/50; C23C16/517; C23C16/52; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32431; H01J37/3244; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/3327; H01J2237/334; H01J2237/3343; H01J2237/3347; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6924; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
221 words
A method for depositing a dielectric film on a substrate in a process chamber, the method comprising: (a) providing a first gaseous mixture to the process chamber, the first gaseous mixture comprising a first deposition gas and a first inert gas source; (b) generating a first high-density plasma from the first gaseous mixture to deposit a first portion of the film on the substrate with a first deposition/sputter ratio within the range of 5-20, wherein the first deposition/sputter ratio is defined as a ratio of a sum of a first net deposition rate and a first blanket sputtering rate to the first blanket sputtering rate; (c) thereafter, cooling the substrate; (d) thereafter, flowing an etchant gas into the process chamber; (e) thereafter, providing a second gaseous mixture to the process chamber, the second gaseous mixture comprising a second deposition gas and a second inert gas source; and (f) generating a second high-density plasma from the second gaseous mixture to deposit a second portion of the film on the substrate, wherein the step of generating a second high-density plasma is performed with a second deposition/sputter ratio within the range of 5-20, wherein the second deposition/sputter ratio is defined as a ratio of a sum of a second net deposition rate and a second blanket sputtering rate to the second blanket sputtering rate.
Claim 2
Independent Claim
221 words
A method for depositing a dielectric film on a substrate in a process chamber, the method comprising: (a) providing a first gaseous mixture to the process chamber, the first gaseous mixture comprising a first deposition gas and a first inert gas source; (b) generating a first high-density plasma from the first gaseous mixture to deposit a first portion of the film on the substrate with a first deposition/sputter ratio within the range of 5-20, wherein the first deposition/sputter ratio is defined as a ratio of a sum of a first net deposition rate and a first blanket sputtering rate to the first blanket sputtering rate; (c) thereafter, cooling the substrate; (d) thereafter, flowing an etchant gas into the process chamber; (e) thereafter, providing a second gaseous mixture to the process chamber, the second gaseous mixture comprising a second deposition gas and a second inert gas source; and (f) generating a second high-density plasma from the second gaseous mixture to deposit a second portion of the film on the substrate, wherein the step of generating a second high-density plasma is performed with a second deposition/sputter ratio within the range of 5-20, wherein the second deposition/sputter ratio is defined as a ratio of a sum of a second net deposition rate and a second blanket sputtering rate to the second blanket sputtering rate.
Claim 3
Dependent Claim
20 words
The method according to claim 1 wherein the second gaseous mixture is substantially the same as the first gaseous mixture.
Claim 4
Dependent Claim
17 words
The method according to claim 1 wherein the first deposition/sputter ratio is in the range of 9-15.
Claim 5
Dependent Claim
18 words
The method according to claim 1 wherein the second deposition/sputter ratio is less than the first deposition/sputter ratio.
Claim 6
Dependent Claim
15 words
The method according to claim 1 wherein the etchant gas comprises remotely dissociated etchant atoms.
Claim 7
Dependent Claim
15 words
The method according to claim 5 wherein the remotely dissociated etchant atoms comprise fluorine atoms.
Claim 8
Dependent Claim
16 words
The method according to claim 6 wherein the fluorine atoms are provided by NF 3 .
Claim 9
Dependent Claim
23 words
The method according to claim 1 further comprising the step of dissociating the etchant gas into dissociated etchant atoms within the process chamber.
Claim 10
Dependent Claim
14 words
The method according to claim 8 wherein the etchant gas is a fluorine-containing gas.
Claim 11
Dependent Claim
14 words
The method according to claim 8 wherein the etchant gas is NF 3 .
Claim 12
Dependent Claim
15 words
The method according to claim 1 wherein the dielectric film is a silicon oxide film.
Claim 13
Dependent Claim
16 words
The method according to claim 1 wherein the dielectric film is a fluorinated silicon oxide film.
Claim 14
Dependent Claim
44 words
The method according to claim 1 wherein the dielectric film is deposited over a plurality of stepped surfaces formed on the substrate having gaps formed between adjacent ones of the stepped surfaces and wherein the first portion of the film partially fills the gaps.
Claim 15
Dependent Claim
17 words
The method according to claim 13 wherein the second portion of the film completes filling the gaps.
Claim 16
Dependent Claim
20 words
The method according to claim 1 wherein the step of cooling the substrate is performed external to the process chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-31 | 2005-07-02 | 2006-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-31 | 2009-07-02 | 2010-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-31 | 2013-07-02 | 2014-01-01 | $7700.00 | Window Closed / Lapsed |