US5872052A
Expired / Lapsed
US
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Planarization using plasma oxidized amorphous silicon
Assignee: Micron Technology Inc
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Filing: 1996-02-12
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Granted: 1999-02-16
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Expires: 2016-02-12
Abstract
Abstract A planarization process for filling spaces between patterned metal features formed over a surface of a semiconductor substrate. The patterned metal features are preferably coated with a dielectric barrier. The dielectric barrier is coated with an material that expands during oxidation or nitridization to a thickness about half the depth of the space between metallized features. The layer is then plasma oxidized using an RF or ECR plasma at low temperature with an oxygen ambient. Alternatively, the layer is plasma nitridized at low temperature. The plasma oxidation or nitridization is continued until the expandable material is converted to a dielectric and has expanded to fill the space between patterned metal features. Optionally, the process can be followed by a mechanical or chemical mechanical planarization step.
Inventors
- 👤 Ravi Iyer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6319; H10P95/00; H10P95/06
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
72 words
A method for filling spaces between patterned metal features, the method comprising the steps of: coating the patterned metal features with a first material so as to partially fill the spaces between the metal features; and treating the first material at a temperature less than a melting point of the material features so as to cause the first material to expand to completely fill the partially filled spaces between the metal features.
Claim 2
Independent Claim
72 words
A method for filling spaces between patterned metal features, the method comprising the steps of: coating the patterned metal features with a first material so as to partially fill the spaces between the metal features; and treating the first material at a temperature less than a melting point of the material features so as to cause the first material to expand to completely fill the partially filled spaces between the metal features.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the coating step comprises CVD process.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the coating step comprises deposition of amorphous silicon.
Claim 5
Dependent Claim
22 words
The method of claim 1 further comprising depositing an insulating barrier layer on the patterned metal features before the step of coating.
Claim 6
Dependent Claim
21 words
The method of claim 4 further comprising the step of facet etching the insulating barrier layer before the step of coating.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein the step of treating comprises plasma oxidation.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the step of treating comprises plasma nitridization.
Claim 9
Independent Claim
62 words
A method for planarizing an integrated circuit having raised metal features with recesses therebetween, said method comprising the steps of: (a) depositing a layer of expandable material over said metal features and said recesses of said integrated circuit, said layer of expandable material partially filling said recesses; and (b) expanding said layer of expandable material to fill said partially filled recesses completely.
Claim 10
Independent Claim
62 words
A method for planarizing an integrated circuit having raised metal features with recesses therebetween, said method comprising the steps of: (a) depositing a layer of expandable material over said metal features and said recesses of said integrated circuit, said layer of expandable material partially filling said recesses; and (b) expanding said layer of expandable material to fill said partially filled recesses completely.
Claim 11
Dependent Claim
26 words
The method, as set forth in claim 8, wherein step (a) comprises the step of: depositing a layer of silicon over said features and said recesses.
Claim 12
Dependent Claim
20 words
The method, as set forth in claim 9, wherein step (b) comprises the step of: oxidizing said layer of silicon.
Claim 13
Dependent Claim
25 words
The method, as set forth in claim 8, wherein step (a) comprises the step of: depositing said layer of expandable material using chemical vapor deposition.
Claim 14
Dependent Claim
34 words
The method, as set forth in claim 8, wherein step (b) comprises the step of: converting said layer of expandable material in said recesses into another material which expands to fill said recesses completely.
Claim 15
Independent Claim
67 words
A method of filling recesses between metal features of an integrated circuit, said method comprising the steps of: (a) depositing a layer of non-dielectric material over said metal features and said recesses, said layer of non-dielectric material partially filling said recesses; and (b) converting said layer of non-dielectric material in said partially filled recesses into a dielectric material which expands to fill said partially filled recesses completely.
Claim 16
Independent Claim
67 words
A method of filling recesses between metal features of an integrated circuit, said method comprising the steps of: (a) depositing a layer of non-dielectric material over said metal features and said recesses, said layer of non-dielectric material partially filling said recesses; and (b) converting said layer of non-dielectric material in said partially filled recesses into a dielectric material which expands to fill said partially filled recesses completely.
Claim 17
Dependent Claim
17 words
The method, as set forth in claim 13, wherein said recesses are formed between adjacent metallized features.
Claim 18
Dependent Claim
26 words
The method, as set forth in claim 13, wherein step (a) comprises the step of: depositing a layer of silicon over said features and said recesses.
Claim 19
Dependent Claim
19 words
The method, as set forth in claim 13, wherein step (b) comprises the step of oxidizing said non-dielectric material.
Claim 20
Dependent Claim
19 words
The method, as set forth in claim 13, wherein step (b) comprises the step of nitridizing said non-dielectric material.
Claim 21
Independent Claim
64 words
A method of filling recesses between metal features of an integrated circuit, said method comprising the steps of: (a) depositing a conformal layer of material over said metal features and said recesses, said conformal layer of material partially filling said recesses; and (b) converting said conformal layer of material in said recesses into another material which expands to fill said partially filled recesses completely.
Claim 22
Independent Claim
64 words
A method of filling recesses between metal features of an integrated circuit, said method comprising the steps of: (a) depositing a conformal layer of material over said metal features and said recesses, said conformal layer of material partially filling said recesses; and (b) converting said conformal layer of material in said recesses into another material which expands to fill said partially filled recesses completely.
Claim 23
Dependent Claim
17 words
The method, as set forth in claim 18, wherein said recesses are formed between adjacent metallized features.
Claim 24
Dependent Claim
27 words
The method, as set forth in claim 18, wherein step (a) comprises the step of: depositing a conformal layer of silicon over said features and said recesses.
Claim 25
Dependent Claim
27 words
The method, as set forth in claim 18, wherein step (a) comprises the step of: depositing a conformal layer of non-dielectric material over said features and recesses.
Claim 26
Dependent Claim
18 words
The method, as set forth in claim 18, wherein step (b) comprises the step of oxidizing said material.
Claim 27
Dependent Claim
18 words
The method, as set forth in claim 18, wherein step (b) comprises the step of nitridizing said material.
Claim 28
Independent Claim
76 words
A method of filling recesses between patterned metal features of an integrated circuit, said method comprising the steps of: (a) depositing a conformal layer of silicon over said metal features and recesses using chemical vapor deposition such that said conformal layer of silicon only partially fills said recesses; (b) completely oxidizing said conformal layer of silicon to convert said conformal layer of silicon to a layer of silicon dioxide which completely fills said partially filled recesses.
Claim 29
Independent Claim
76 words
A method of filling recesses between patterned metal features of an integrated circuit, said method comprising the steps of: (a) depositing a conformal layer of silicon over said metal features and recesses using chemical vapor deposition such that said conformal layer of silicon only partially fills said recesses; (b) completely oxidizing said conformal layer of silicon to convert said conformal layer of silicon to a layer of silicon dioxide which completely fills said partially filled recesses.
References Cited (Backward Citations)
US4323589A
Cited
US4408387A
Cited
JPS6070740A
Cited
US4527325A
Cited
US4576829A
Cited
US4604304A
Cited
US5043224A
Cited
JPH02114641A
Cited
US5182221A
Cited
US5330935A
Cited
US5026665A
Cited
US5384288A
Cited
US5310720A
Cited
US5387539A
Cited
US5466637A
Cited
US5391508A
Cited
US5508209A
Cited
US5438016A
Cited
US5472904A
Cited
US5567638A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |